BUK75/764R3-40B
TrenchMOS? standard level FET
Rev. 01 — 09 April 2003
Product data
1.Product pro?le
1.1Description
N-channel enhancement mode ?eld-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS? technology.Product availability:
BUK754R3-40B in SOT78 (TO-220AB)BUK764R3-40B in SOT404 (D 2-PAK).
1.2Features
1.3Applications
1.4Quick reference data
2.Pinning information
[1]
It is not possible to make connection to pin 2 of the SOT404 package.
s Very low on-state resistance s Q101 compliant
s 175°C rated
s Standard level compatible.
s Automotive systems
s 12 V loads
s Motors, lamps and solenoids
s General purpose power switching.
s E DS(AL)S ≤961mJ s R DSon =3.8m ?(typ)s I D ≤75A
s P tot ≤254W.
Table 1:Pinning - SOT78 and SOT404 simpli?ed outlines and symbol Pin Description Simpli?ed outline
Symbol
1gate (g)SOT78 (TO-220AB)
SOT404 (D 2-PAK)
2drain (d)[1]
3source (s)mb
mounting base,connected to drain (d)
MBK106
12mb
3
13
2
MBK116
mb
s
d
g
MBB076
3.Limiting values
[1]Current is limited by power dissipation chip rating.[2]Continuous current is limited by package.
Table 2:Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter Conditions Min Max Unit V DS drain-source voltage (DC)-40V V DGR drain-gate voltage (DC) R GS =20k ?
-40V V GS gate-source voltage (DC)-±20V I D
drain current (DC)
T mb =25°C; V GS =10V;Figure 2and 3
[1]-176A [2]-75A T mb =100°C; V GS =10V;Figure 2
[2]
-75A I DM peak drain current T mb =25°C; pulsed; t p ≤10μs;Figure 3
-706A P tot total power dissipation T mb =25°C;Figure 1
-254W T stg storage temperature ?55+175°C T j junction temperature ?55+175°C Source-drain diode
I DR reverse drain current (DC)T mb =25°C
[1]-176A [2]-75A I DRM
peak reverse drain current
T mb =25°C; pulsed; t p ≤10μs -706A Avalanche ruggedness
E DS(AL)S non-repetitive drain-source avalanche
energy
unclamped inductive load; I D =75A;V DS ≤40V; V GS =10V; R GS =50?;starting T mb =25°C
-
961
mJ
V GS ≥10V
Fig 1.Normalized total power dissipation as a function of mounting base temperature.Fig 2.Continuous drain current as a function of
mounting base temperature.
T mb =25°C; I DM single pulse.
Fig 3.Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03na19
040
80
1200
50
100
150
200
T mb (°C)
P der (%)
03nk47
050
100
150
2000
50
100
150
200
T mb (°C)
I D (A)Capped at 75 A due to package
P der P tot
P tot 25C °
()
-----------------------100%
×=03nk45
1
10
102
103
10-1
1 10
102
V DS (V)
I D (A)
DC
100 ms
10 ms Limit R DSon = V DS /I D
1 ms
t p = 10 μs
100 μs
Capped at 75 A due to package
4.Thermal characteristics
4.1Transient thermal impedance
Table 3:Thermal characteristics
Symbol Parameter
Conditions Min Typ Max Unit R th(j-mb)thermal resistance from junction to mounting base
Figure 4
--0.59K/W
R th(j-a)
thermal resistance from junction to ambient SOT78 (TO-220AB)vertical in still air
--60K/W SOT404 (D 2-P AK)
minimum footprint; mounted on a PCB
--50
K/W
Fig 4.Transient thermal impedance from junction to mounting base as a function of pulse duration.
03nk46
single shot
0.2
0.10.050.02
10-3
10-2
10-1
110-6
10-5
10-4
10-3
10-2
10-1
1
t p (s)
Z th(j-mb) (K/W)
δ = 0.5
t p
t p T P
t
T
δ =
5.Characteristics
Table 4:Characteristics
T j=25°C unless otherwise speci?ed.
Symbol Parameter Conditions Min Typ Max Unit Static characteristics
V(BR)DSS drain-source breakdown
voltage I D=0.25mA; V GS=0V
T j=25°C40--V T j=?55°C36--V
V GS(th)gate-source threshold voltage I D=1mA; V DS=V GS;
Figure9
T j=25°C234V
T j=175°C1--V
T j=?55°C-- 4.4V I DSS drain-source leakage current V DS=40V; V GS=0V
T j=25°C-0.021μA
T j=175°C--500μA I GSS gate-source leakage current V GS=±20V; V DS=0V-2100nA
R DSon drain-source on-state
resistance V GS=10V; I D=25A;
Figure7and8
T j=25°C- 3.8 4.3m?T j=175°C--8.1m?
Dynamic characteristics
Q g(tot)total gate charge V GS=10V; V DD=32V;
I D=25A;Figure14-69-nC
Q gs gate-source charge-14-nC Q gd gate-drain (Miller) charge-22-nC
C iss input capacitance V GS=0V; V DS=25V;
f=1MHz;Figure12-36184824pF
C oss output capacitance-10491259pF C rss reverse transfer capacitance-413565pF
t d(on)turn-on delay time V DD=30V; R L=1.2?;
V GS=10V; R G=10?-27-ns
t r rise time-55-ns t d(off)turn-off delay time-95-ns t f fall time-65-ns L d internal drain inductance from drain lead 6mm from
package to centre of die
- 4.5-nH
from contact screw on
mounting base to centre of
die SOT78
- 3.5-nH
from upper edge of drain
mounting base to centre of
die SOT404
- 2.5-nH
L s internal source inductance from source lead to source
bond pad
-7.5-nH
Source-drain diode
V SD source-drain (diode forward)voltage
I S =25A; V GS =0V;Figure 15
-0.85 1.2V t rr reverse recovery time I S =20A;dI S /dt =?100A/μs V GS =?10V; V DS =30V
-68-ns Q r
recovered charge
-62
-nC
Table 4:Characteristics …continued T j =25°C unless otherwise speci?ed.Symbol Parameter
Conditions Min Typ Max Unit
T j =25°C; t p =300μs T j =25°C; I D =25A
Fig 5.Output characteristics: drain current as a
function of drain-source voltage;typical values.Fig 6.Drain-source on-state resistance as a function
of gate-source voltage; typical values.
T j =25°C
Fig 7.Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.Normalized drain-source on-state resistance factor as a function of junction temperature.
03nl78
0100
200
300
4000
2
4
6
8
10
V DS (V)
I D (A)Label is V GS (V)
76.5
6
5.5
54.5
8
2010
7.5
03nl77
34
5
6
7
85
10
15
20
V GS (V)
R DSon (m ?)
03nl79
35
7
90
100
200
300
400
I D (A)
R DSon (m ?)
Label is V GS (V)
6
7
8
1020
03aa27
00.5
1
1.5
2-60
60
120
180
T j (°C)
a a R
DSon R DSon 25C °()
----------------------------=
I D =1mA; V DS =V GS T j =25°C; V DS =V GS
Fig 9.Gate-source threshold voltage as a function of
junction temperature.Fig 10.Sub-threshold drain current as a function of
gate-source voltage.
T j =25°C; V DS =25V V GS =0V; f =1MHz
Fig 11.Forward transconductance as a function of
drain current; typical values.
Fig 12.Input,output and reverse transfer capacitances
as a function of drain-source voltage; typical values.
03aa32
01
23
4
5-60
60
120
180
T j (°C)
V GS(th) (V)
max
min
typ
03aa35
10-6
10-5
10-4
10-3
10-2
10-10
2
4
6
V GS (V)
I D (A)max
typ min 03nl75
020
40
60
800
20
40
60
80
I D (A)
g fs (S)03nl80
02000
4000
600010-2
10-1
1 10
102
V DS (V)
C (pF)C iss
C oss
C rss
V DS =25V T j =25°C; I D =25A
Fig 13.Transfer characteristics: drain current as a
function of gate-source voltage; typical values.Fig 14.Gate-source voltage as a function of gate
charge; typical values.
V GS =0V
Fig 15.Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values.
03nl76
025
50
75
1000
1
2
3
45
V GS (V)
I D (A)T j = 175 °C
T j = 25 °C
03nl74
02
4
6
8
100204060
80
Q G (nC)
V GS (V)V DD = 32 V
V DD = 14 V
03nl73
025
50
75
1000.0
0.3
0.6
0.9
1.2
V SD (V)
I S (A)T j = 175 °C
T j = 25 °C
6.Package outline
REFERENCES
OUTLINE VERSION EUROPEAN PROJECTION
ISSUE DATE IEC
JEDEC EIAJ SOT78
SC-46
3-lead TO-220AB
D
D 1
q
p
L
123
L 1(1)
b 1
e e
b
0510 mm
scale
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
DIMENSIONS (mm are the original dimensions)A E A 1
c
Note
1. Terminals in this zone are not tinned.
Q
L 2
UNIT A 1b 1D 1e p mm
2.54
q Q A b D c L 2max.3.0
3.83.6
15.013.5
3.302.79
3.02.7
2.62.2
0.70.4
15.815.2
0.90.7
1.31.0
4.54.1
1.391.27
6.45.9
10.39.7
L 1(1)E L 00-09-0701-02-16
mounting base
UNIT A REFERENCES
OUTLINE VERSION EUROPEAN PROJECTION
ISSUE DATE IEC
JEDEC
EIAJ
mm
A 1D 1D max.E e L p H D Q c 2.54
2.602.20
15.8014.80
2.902.10
11
1.601.20
10.309.70
4.504.10
1.401.27
0.850.60
0.640.46
b DIMENSIONS (mm are the original dimensions) SOT404
0 2.5 5 mm
scale
Plastic single-ended surface mounted package (Philips version of D 2-PAK); 3 leads (one lead cropped)
SOT404
e e
E
b
D 1
H D
D
Q
L p
c A 1
A
13
2
mounting base
99-06-2501-02-12
7.Soldering
Dimensions in mm.
Fig 18.Re?ow soldering footprint for SOT404.
handbook, full pagewidth
MSD057
solder lands solder resist occupied area solder paste
10.50
7.40
7.501.50
1.70
10.60 1.201.301.55
5.08
10.850.30
2.15
8.35
2.254.60
0.20
3.00
4.85
7.95
8.158.075
8.275
5.40
1.50
8.Revision history
Table 5:Revision history
Rev Date CPCN Description
0120030409-Product data (9397 750 11133)
9.Data sheet status
[1]Please consult the most recently issued data sheet before initiating or completing a design.
[2]The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL https://www.wendangku.net/doc/09695992.html,.
[3]For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
10.De?nitions
Short-form speci?cation —The data in a short-form speci?cation is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values de?nition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speci?cation is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation.
11.Disclaimers
Life support —These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.
Right to make changes —Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Noti?cation (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products,and makes no representations or warranties that these products are free from patent,copyright,or mask work right infringement,unless otherwise speci?ed.
12.Trademarks
TrenchMOS —is a trademark of Koninklijke Philips Electronics N.V.
Level Data sheet status[1]Product status[2][3]De?nition
I Objective data Development This data sheet contains data from the objective speci?cation for product development. Philips
Semiconductors reserves the right to change the speci?cation in any manner without notice.
II Preliminary data Quali?cation This data sheet contains data from the preliminary speci?cation.Supplementary data will be published
at a later date.Philips Semiconductors reserves the right to change the speci?cation without notice,in
order to improve the design and supply the best possible product.
III Product data Production This data sheet contains data from the product speci?cation. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design,manufacturing and supply.Relevant
changes will be communicated via a Customer Product/Process Change Noti?cation (CPCN).
Contact information
? Koninklijke Philips Electronics N.V .2003.Printed in The Netherlands
All rights are reserved.Reproduction in whole or in part is prohibited without the prior Contents
1Product pro?le . . . . . . . . . . . . . . . . . . . . . . . . . . 11.1Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.2Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.3Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.4Quick reference data. . . . . . . . . . . . . . . . . . . . . 12Pinning information. . . . . . . . . . . . . . . . . . . . . . 13Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 24Thermal characteristics. . . . . . . . . . . . . . . . . . . 44.1T ransient thermal impedance . . . . . . . . . . . . . . 45Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 56Package outline . . . . . . . . . . . . . . . . . . . . . . . . 107Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128Revision history. . . . . . . . . . . . . . . . . . . . . . . . 139Data sheet status. . . . . . . . . . . . . . . . . . . . . . . 1410De?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1411Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 1412
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14