RF3867中文资料

Optimum Technology Matching? Applied

GaAs HBT InGaP HBT

GaAs MESFET SiGe BiCMOS Si BiCMOS SiGe HBT

GaAs pHEMT

Si CMOS Si BJT

GaN HEMT

Functional Block Diagram

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Product Description

Ordering Information

NC RF IN1RF IN2N C

A C G 2

V D D 2

N C

A C G 1

V D D 1N C

N C

NC NC RF OUT2RF OUT1NC NC N C

NC

N C

DUAL-CHANNEL, WIDE BANDWIDTH,HIGH LINEARITY LOW NOISE AMPLIFIER

The RF3867 is a dual-channel version of the RF3863 with a low noise amplifier and a high output IP3. The amplifier is self-biased from a single voltage supply with 50Ω input and output ports. The useful frequency range is from 700MHz to 3800MHz. A 0.8dB noise figure and 36dBm OIP3 performance is achieved with a 5V V DD , 180mA. Current can be increased to raise OIP3 while having minimal effect on noise figure. The IC is featured in a standard QFN, 20-pin, 5mmx5mm package.

Features

Dual-Channel

Low Noise and High Intercept Point

Adjustable Bias Current

Single 2.5V to 6.0V Power Supply

700MHz to 3800MHz Opera-tion

Small QFN20 5mmx5mm Package

Applications

CDMA,PCS,DCS,UMTS LNA WLAN LNA

General Purpose Amplifica-tion

RF3867Dual-Channel, Wide Bandwidth, High Linearity Low Noise Amplifier

RF3867PCK-410Fully Assembled Evaluation Board with 5 Sample Parts 1.5GHz to 2.7GHz RF3867PCK-411 3.3GHz to 3.8GHz RF3867PCK-412

700MHz to 1100MHz

9Package Style: QFN, 20-Pin, 5mmx5mm

Absolute Maximum Ratings

Parameter

Rating

Unit

Supply Voltage 0 to +7.0V DC Input RF Level +10dBm Current Drain, I DD

150 per Channel mA Operating Ambient Temperature -40 to +85°C Storage Temperature

-40 to +150

°C

Note 1: Max continous RF IN is +10dBm. The max transient RF IN is +20dBm.

Parameter

Specification

Unit

Condition

Min.

Typ.

Max.

High Band

Frequency 3.3

3.8

GHz Current 180mA V DD =5V

Gain 10dB Temp=+25°C, V DD =5V, I DD =180mA, 3500MHz unless specified Noise Figure 0.8dB OIP336dBm f 1=3500MHz, f 2=3501MHz

OP1dB 21dBm S11-10dB S22

-12

dB

Mid Band

Frequency 1500

2700

MHz Current 180

mA V DD =5V

Gain 13.5

15.016.5dB +25°C, V DD =5V, I DD =180mA, 2000MHz unless specified

Noise Figure 0.8

1.1dB OIP333.035.5dBm f 1=2000MHz, f 2=2001MHz OP1dB 21.0

22.525.0dBm S11-10dB S22

-14

dB Low Band

Frequency 700

1100MHz Current 180mA V DD =5V

Gain 18.5dB +25°C, V DD =5V, I DD =180mA, 850MHz unless specified

Noise Figure 1dB OIP335dBm f 1=850MHz, f 2=851MHz OP1dB 22dBm S11-10dB S22

-10

dB

Caution! ESD sensitive device.

Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical perfor-mance or functional operation of the device under Absolute Maximum Rating condi-tions is not implied.

RoHS status based on EUDirective2002/95/EC (at time of this document revision).The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended appli-cation circuitry and specifications at any time without prior notice.

Pin Function Description Interface Schematic 1NC Not connected.

2RF IN1Channel 1 RF input pin. 50Ω matched. This pin is DC-blocked.

3NC Not connected.

4RF IN2Channel 2 RF input pin. 50Ω matched. This pin is DC-blocked.

5NC Not connected.

6NC Not connected.

7ACG2Channel 2 AC ground. Shunt cap may be added for tuning. Shunt resistor

may be added to increase I DD.

8NC Not connected.

9VDD2Channel 2 bias voltage. 2.5V to 6.0V applied through bias inductor.

10NC Not connected.

11NC Not connected.

12RF OUT2Channel 2 RF output pin. 50Ω matched. This pin is DC-blocked.

13NC Not connected.

14RF OUT1Channel 1 RF output pin. 50Ω matched. This pin is DC-blocked.

15NC Not connected.

16NC Not connected.

17VDD1Channel 1 bias voltage. 2.5V to 6.0V applied through bias inductor.

18NC Not connected.

19ACG1Channel 1 AC ground. Shunt cap may be added for tuning. Shunt resistor

may be added to increase I DD.

20NC Not connected.

Pkg

GND Ground connection.

Base

Package Drawing

Dimensions in mm.

Evaluation Board Schematic

700MHz to 1100MHz, 1500MHz to 2700MHz, and 3300MHz to 3800MHz

J3J4R2 and R3 are DNP for typical 90 mA per channel current draw. If R2 or R3 is added,the channel I DD will increase. A 10 Ω R2 or R3 will raise the current of a channel to achieve higher linearity.

Note 1: For low band add a series 6.8 nH inductor on RF IN, and a shunt 15 nH inductor on RF OUT.

Inductors should be placed as close as possible to the part.Note 2: The topology of L3, L4, C5, and C6 in the mid and high bands. They must be as shown in the chart.

1.5High Band

3300 MHz to 3800 MHz Component L1, L2 (nH)100 pF L4, L3 (nH)Mid Band

1500 MHz to 2700 MHz Low Band

700 MHz to 1100 MHz

1256100 pF 2212 nH C5, C6 (pF) 4.7 nH 100DNP C2, C3 (pF)12 6.8DNP R2, R3 (Ω)DNP DNP 0

R1 (Ω)

0See note 1

5V Noise Figure versus Temperature

0.20.4

0.6

0.8

1.0

1.2

1.4

1.6

1500.0

2000.0

2500.0

3000.0

Frequency (MHz)N o i s e F i g u r e (d B )

5V Gain versus Temperature

0.02.04.0

6.0

8.010.012.0

14.0

16.018.01600.0

1800.0

2000.0

2200.0

2400.0

2600.0

2800.0Frequency (MHz)

G a i n (d B )

5V OIP3 versus Temperature

33.534.0

34.5

35.0

35.5

36.0

36.5

37.0

37.5

1600.0

1800.0

2000.0

2200.0

2400.0

2600.0

2800.0

Frequency (MHz)O I P 3 (d B m )

5V P1dB versus Temperature

20.020.5

21.0

21.5

22.0

22.5

23.0

23.5

1600.0

1800.0

2000.0

2200.0

2400.0

2600.0

2800.0

Frequency (MHz)

P 1d B (d B m )

5V Noise Figure versus Temperature

0.40.6

0.8

1.0

1.2

1.4

1.6

3.2

3.3

3.4

3.5

3.6

3.7

3.8

3.9

Frequency (GHz)N o i s e F i g u r e (d B )

5V Gain versus Temperature

7.5

8.0

8.5

9.0

9.5

10.0

10.5

11.0

11.5

3.2

3.3

3.4

3.5

3.6

3.7

3.8

3.9

Frequency (GHz)

G a i n (d B )

5V OIP3 versus Temperature

36.0

36.5

37.0

37.5

38.0

38.5

39.0

39.5

3.2

3.3

3.4

3.5

3.6

3.7

3.8

3.9

Frequency (GHz)O I P 3 (d B m )

5V P1dB versus Temperature

22.4

22.522.622.7

22.822.9

23.023.123.223.323.4

23.523.6

23.723.8

23.93.2

3.3

3.4

3.5

3.6

3.7

3.8

3.9

Frequency (GHz)

P 1d B (d B )