当前位置：文档库 › SPN3414S23RG中文资料

SPN3414S23RG中文资料

DESCRIPTION APPLICATIONS

The SPN3414 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell

density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package.

z Power Management in Note book

z Portable Equipment z Battery Powered System z DC/DC Converter

z Load Switch

DSC

LCD Display inverter FEATURES PIN CONFIGURATION(SOT-23-3L)

PART MARKING

20V/4.0A,R DS(ON)=55m ?@V GS =4.5V 20V/3.4A,R DS(ON)=70m ?@V GS =2.5V 20V/2.8A,R DS(ON)=90m ?@V GS =1.8V

Super high density cell design for extremely low

RDS (ON)

Exceptional on-resistance and maximum DC current

capability

SOT-23-3L package design

TYPICAL CHARACTERISTICS

Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation.

?The SYNC Power logo is a registered trademark of SYNC Power Corporation

SYNC Power Corporation

9F-5, No.3-2, Park Street

NanKang District (NKSP), Taipei, Taiwan 115

Phone: 886-2-2655-8178

Fax: 886-2-2655-8468

?https://www.wendangku.net/doc/1c1807088.html,