SI1902DL_08中文资料

Vishay Siliconix

Si1902DL

Dual N-Channel 20-V (D-S) MOSFET

FEATURES

?TrenchFET ? Power MOSFETS: 2.5 V Rated

PRODUCT SUMMARY

V DS (V)r DS(on) (Ω)I D (A)20

0.385 at V GS = 4.5 V 0.700.630 at V GS = 2.5 V

0.54

M a rk in g C o d e P A X X

L o t T

Y Y

SOT-363

SC-70 (6-LEADS)

6

4

1

2

35

Top View

S 1

G 1

D 2

D 1

G 2

S 2

Y Part # Code

Marking Code

A Lot T raceability and Date Code

Ordering Information:Si1902DL-T1 (with Tape and Reel)

Si1902DL-T1-E3 (Lead (Pb)-free with Tape and Reel)

Notes

a. Surface Mounted on 1" x 1" FR4 Board.

* Pb containing terminations are not RoHS compliant, exemptions may apply ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted

Parameter

Symbol 5 secs

Steady State

Unit Drain-Source Voltage V DS 20V

Gate-Source Voltage

V GS ±12

Continuous Drain Current (T J = 150 °C)a T A = 25 °C I

D 0.700.66A

T A = 85 °C

0.50

0.48

Pulsed Drain Current

I DM 1.0

Continuous Source Current (Diode Conduction)a I S 0.250.23Maximum Power Dissipation a

T A = 25 °C P D 0.300.27W T A = 85 °C 0.16

0.14

Operating Junction and Storage Temperature Range

T J , T stg

- 55 to 150°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient a t ≤ 5 sec R thJA 360415°C/W

Steady State 400460Maximum Junction-to-Foot (Drain)Steady State

R thJF

300

350

Si1902DL

Vishay Siliconix

a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS T A = 25 °C, unless otherwise noted

Vishay Siliconix

Si1902DL

TYPICAL CHARACTERISTICS T A = 25 °C, unless otherwise noted

On-Resistance vs. Drain Current

Gate Charge

Surge-Drain Diode Forward Voltage

Capacitance

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

Vishay Siliconix

Si1902DL

TYPICAL CHARACTERISTICS T A = 25 °C, unless otherwise noted

Threshold Voltage

Single Pulse Power, Junction-to-Ambient

Normalized Thermal Transient Impedance, Junction-to-Ambient

Vishay Siliconix

Si1902DL

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see https://www.wendangku.net/doc/1c1934323.html,/ppg?71080.

TYPICAL CHARACTERISTICS T A = 25 °C, unless otherwise noted

Normalized Thermal Transient Impedance, Junction-to-Foot

Disclaimer Legal Disclaimer Notice

Vishay

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.

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