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IXTQ96N15P中文资料

Symbol Test Conditions

Maximum Ratings

V DSS T J = 25°C to 175°C

150V V DGR T J = 25°C to 175°C; R GS = 1 M ?

150V V GSM ±20

V I D25T C = 25°C

96A I D(RMS)External lead current limit

75A I DM T C = 25°C, pulse width limited by T JM 250A I AR T C = 25°C 60A E AR T C = 25°C 40mJ E AS T C = 25°C

1.0J dv/dt I S ≤ I DM , di/dt ≤ 100 A/μs, V DD ≤ V DSS ,10V/ns T J ≤ 150°C, R G = 4 ?P D T C = 25°C

480

W T J -55 ... +175

°C T JM 175

°C T stg -55 ... +150

°C T L 1.6 mm (0.062 in.) from case for 10 s 300

°C

M d Mounting torque (TO-3P)

1.13/10Nm/lb.in.

Weight

TO-3P 5.5g TO-268

5.0

G = Gate D = Drain S = Source

TAB = Drain

DS99131C(05/04)

Symbol Test Conditions

Characteristic Values (T J = 25°C, unless otherwise specified) Min. Typ.Max.V DSS V GS = 0 V, I D = 250 μA 150V V GS(th)V DS = V GS , I D = 250μA 2.5

5.0V I GSS V GS = ±20 V DC , V DS = 0±100nA I DSS V DS = V DSS 25

μA V GS = 0 V

T J = 150°C

250μ

A R DS(on)

V GS = 10 V, I D = 0.5 I D25

m ?

Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %

PolarHT TM

Power MOSFET

IXTQ 96N15P V DSS = 150 V IXTT 96N15P

I D25

= 96 A R DS(on)

= 24 m ?

N-Channel Enhancement Mode Features

z International standard packages

Unclamped Inductive Switching (UIS)rated

Low package inductance -easy to drive and to protect

Advantages

z Easy to mount z Space savings z

High power density

PolarHT TM DMOS transistors utilize proprietary designs and process. US patent is pending.

TO-3P (IXTQ)

(TAB)

TO-268 (IXTT)

D (TAB)

Preliminary Data Sheet