R433A datasheet
In keeping with our ongoing policy of product evolvement and improvement, the above specification is subject to change without notice.
ISO9001: 2000 Registered - Registration number 6830/2 For quotations or further information please contact us at:
3 The Business Centre, Molly Millars Lane, Wokingham, Berks, RG41 2EY, UK
The ACTR433A/433.92/TO39-1.5 is a true one-port, surface-acoustic-wave (SAW ) resonator in a low-profile metal TO-39 case. It provides reliable, fundamental-mode, quartz frequency stabilization i.e. in transmitters or local oscillators operating at 433.920 MHz.
1.Package Dimension (TO-39)
2.
3.Equivalent LC Model and Test Circuit
4.Typical Application Circuits
1) Low-Power Transmitter Application 2) Local Oscillator Application
Pin Configuration 1 Input / Output 2 Output / Input 3 Case Ground
Dimension
Data (unit: mm) A 9.30±0.20 B 5.08±0.10 C 3.40±0.20 D 3±0.20?5±0.20 E
0.45±0.20
Issue : 1 C1 Date : SEPT 04
In keeping with our ongoing policy of product evolvement and improvement, the above specification is subject to change without notice.
ISO9001: 2000 Registered - Registration number 6830/2 For quotations or further information please contact us at:
3 The Business Centre, Molly Millars Lane, Wokingham, Berks, RG41 2EY, UK
5.Typical Frequency Response
6.Temperature Characteristics
7.Performance
7-1.Maximum Ratings
Rating
Value
Units
CW RF Power Dissipation
0 dBm DC Voltage Between Any Two Pins ±30V VDC Case Temperature
-40 to +85
°C
7-2.Electronic Characteristics
Characteristic
Sym
Minimum
Typical
Maximum
Units
Absolute Frequency f C 433.845
433.995
MHz Centre Frequency
(+25°C) Tolerance from 433.920MHz
?f C ±75 kHz Insertion Loss IL 1.5 2.2 dB Unloaded Q Q U 11,600 Quality Factor
50 ? Loaded Q Q L 1,850 Turnover Temperature
T 0 25 55 °C Turnover Frequency
f 0 fc kHz Temperature Stability
Frequency Temperature Coefficient
FTC 0.032 ppm/°C 2 Frequency Aging Absolute Value during the First Year |f A | ≤10 ppm/yr DC Insulation Resistance Between Any Two Pins
1.0 M ? Motional Resistance
R M 19 29 ? Motional Inductance L M 80.7885 μH Motional Capacitance
C M 1.6669 fF RF Equivalent RLC Model
Pin 1 to Pin 2 Static Capacitance C 0
1.65
1.95
2.25
pF
i CAUTION: Electrostatic Sensitive Device. Observe precautions for handling!
Issue : 1 C1 Date : SEPT 04
In keeping with our ongoing policy of product evolvement and improvement, the above specification is subject to change without notice.
ISO9001: 2000 Registered - Registration number 6830/2 For quotations or further information please contact us at:
3 The Business Centre, Molly Millars Lane, Wokingham, Berks, RG41 2EY, UK
1. The centre frequency, f C , is measured at the minimum IL point with the resonator in the 50Ω test system.
2. Unless noted otherwise, case temperature T C = +25°C±2°C.
3. Frequency aging is the change in f C with time and is specified at +65°C or less. Aging may exceed the
specification for prolonged temperatures above +65°C. Typically, aging is greatest the first year after manufacture, decreasing in subsequent years.
4. Turnover temperature, T 0, is the temperature of maximum (or turnover) frequency, f 0. The nominal frequency at
any case temperature, T C , may be calculated from: f = f 0 [1 - FTC (T 0 - T C )2
].
5. This equivalent RLC model approximates resonator performance near the resonant frequency and is provided
for reference only. The capacitance C 0 is the measured static (non-motional) capacitance between Pin1 and Pin2. The measurement includes case parasitic capacitance.
6. Derived mathematically from one or more of the following directly measured parameters: f C , IL, 3 dB bandwidth,
f C versus T C , and C 0.
7. The specifications of this device are based on the test circuit shown above and subject to change or
obsolescence without notice.
8. Typically, equipment utilizing this device requires emissions testing and government approval, which is the
responsibility of the equipment manufacturer.
9. Our liability is only assumed for the Surface Acoustic Wave (SAW) component(s) per se, not for applications,
processes and circuits implemented within components or assemblies.
Issue : 1 C1 Date : SEPT 04