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Hitachi AC8955

Hitachi Chemical Data Sheet

Hitachi Anisotropic Conductive Film

ANISOLM?

AC-8955YW

Issued 2007/03/30

1.Standard specification, bonding condition, storage condition and characteristic (1)

2.Precautions in bonding (2)

3.Connection reliability (3)

4.Insulation reliability (In-situ bias test) (6)

5.Particle counts on bump (8)

6.Physical properties (9)

7.Reaction rate (9)

R&D Department

Advanced Interconnect Material Division

Hitachi Chemical Co.,Ltd.,

< NOTICE: This document may wholly or partially be subject to change without notice.>

1.Standard specification, bonding condition, storage condition and characteristic

Notes:

1)Leave ANISOLM at room temperature for an hour before opening sealed bag. Make sure ANISOLM is not wet

before using it.

2)Suitable bonding condition depends on specification of IC chip, glass substrate, bonding machines etc. Please

contact us for detailed information.

3)Connection resistance was measured by four-probe method at 1mA using Hitachi Chemical’s testing pieces.

4)Insulation resistance was measured by applying DC50V for 60 seconds using Hitachi Chemical’s testing pieces.

Reliability test result depends on materials used. Please contact us for detailed information.

The values given above represent typical measurements, not guaranteed ones.

2.Precautions in bonding

2.1Temperature profile in main-bonding of IC chip

Ex.)

Bonding condition: 200 degree C-5sec

Head setting temperature: 220 degree C

Chip size: 1.7mm x 17.2mm x 0.55mmt

Thickness of glass substrate: 0.7mmt

Caution: Temperature should reach at more than

90% of targeting ACF temperature within first 2

seconds.

2.2Measurement of ANISOLM temperature

Bonding head

Temperature recorder

2.3Bonding head

(1) In order to press equally, make sure bonding head is even and parallel to the surface.

(2) Use slightly wider head than IC chip. Example; Chip width 2.0mm Head width 2.5mm

2.4Misalignment of opposite circuits

Make sure opposite circuits are well aligned and matched each other.

3. Connection reliability 3.1

Measurement

(1) Used materials for measurement

/ Test chip A: Min. contact area 2,500um2 (Bump size: 50 x 50um, IC size: 1.7 x 17 x 0.55mm) / Test chip B: Min. contact area 2,025um2 (Bump size: 45 x 45um, IC size: 1.2 x 10 x 0.55mm) / Test board: ITO coated glass(ITO thickness: 0.2um, Surface resistance: 10ohm/ ) (2) Measurement of connection resistance (refer to the diagram below)

/ Four-probe measurement (Circuit resistance can be cancelled) / Measuring current: 1mA

Four probe measurement in COG interconnection

ACF

3.2Test results

ACF : AC-8955YW-23

Lamination condition : 80degC 1MPa 2sec

Main bonding condition : 210degC 80MPa 5sec

(1)Min. contact area: 2,500 um2 (IC size; 1.7 x 17mm)

/ High temperature humidity test (85degC85%RH)

/ Temperature cycling test (-40 / 100degC)

(2)Min. contact area: 2,025 um2 (IC size; 1.2 x 10mm)

/ High temperature humidity test (85degC85%RH)

/ Temperature cycling test (-40 / 100degC)

4.Insulation reliability (In-situ bias test)

4.1Measurement

(1)Used materials for measurement

/ Test chip C: Min. space 15, 12, 10um (Pitch: 38um, IC size: 1.9 x 15 x 0.55mm)

/ Test board: ITO coated glass(ITO thickness: 0.2um, Surface resistance: 10ohm/ )

(2)Measurement of insulation resistance

After main bonding IC chip onto glass substrate using ACF, the sample was set in constant temperature humidity chamber. 20V was kept being applied between comb-shaped circuits during this in-situ testing and insulation resistance between comb-shaped circuits was monitored and recorded.

/ Test condition: 40degC90%RH

/ V oltage: 20V

Bump configuration

20V

4.2Test results

ACF : AC-8955YW-23

Lamination condition : 80degC 1MPa 2sec

Main bonding condition : 210degC 80MPa 5sec

Appearances of ITO lines after bias testing

(after 50hrs)

40degC90%RH/20V

5.Particle counts on bump

5.1Measurement

(1)Used materials for measurement

/ Test chip C: Bump size 3,000um2 (30 x 100um), IC size: 1.9 x 15 x 0.55mm

/ Test chip D: Bump size 2,000um2 (20 x 100um), IC size: 1.6 x 15 x 0.55mm)

/ Test board: ITO coated glass(ITO thickness: 0.2um, Surface resistance: 10ohm/ )

(2)Measurement of particle counts on bump

After main bonding IC chip onto test glass, particle counts on bump was measured by optical microscope.

5.2Test result

Particle counts on bump

Particle counts on bump

Bump size

Average Stdev Ave 3Stdev Ave 4.5Stdev 3,000 un2 30 x 100um 26 3.3 16.4 11.5

2,000um2 20 x 100um 17 3.1 7.7 3.1

1,500um2 *1 14 2.9 4.9

0.5

*1 Particle counts at 1,500um2 is a calculated data based on the data at 2,000um2 and 3,000um2.

6.Physical properties

Item Unit

AC-8955YW

Tg *1 DegC 145

Elastic modulus GPa 1.9

C.T.E *2 Ppm/degC 65

Water absorption rate Wt% 1.0

Conditions

*1 Measured with DVE; Dynamic Visco-Elastic Analyzer

Test conditions: Fully cured sample, Tensile mode, 10Hz Frequency, 10 /min

*2 Measured with TMA; Thermal Mechanical Analyzer

Test conditions: Fully cured sample, Tensile mode, 10 /min, Load 5gf

7.Reaction rate

Measuring method:

Each specimen was heated and hardened in oil kept at a specified temperature for a specified

time, the amount of heat generated was measured with a DSC unit, and the reaction rate was

determined with the following formula;

Reaction rate = (Q0-Q T)/Q0 100

Q0 initial amount of heat generated

Q T amount of heat generated after hardening

Reaction rate of AC-8955YW

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