Hitachi Chemical Data Sheet
Hitachi Anisotropic Conductive Film
ANISOLM?
AC-8955YW
Issued 2007/03/30
1.Standard specification, bonding condition, storage condition and characteristic (1)
2.Precautions in bonding (2)
3.Connection reliability (3)
4.Insulation reliability (In-situ bias test) (6)
5.Particle counts on bump (8)
6.Physical properties (9)
7.Reaction rate (9)
R&D Department
Advanced Interconnect Material Division
Hitachi Chemical Co.,Ltd.,
< NOTICE: This document may wholly or partially be subject to change without notice.>
1.Standard specification, bonding condition, storage condition and characteristic
Notes:
1)Leave ANISOLM at room temperature for an hour before opening sealed bag. Make sure ANISOLM is not wet
before using it.
2)Suitable bonding condition depends on specification of IC chip, glass substrate, bonding machines etc. Please
contact us for detailed information.
3)Connection resistance was measured by four-probe method at 1mA using Hitachi Chemical’s testing pieces.
4)Insulation resistance was measured by applying DC50V for 60 seconds using Hitachi Chemical’s testing pieces.
Reliability test result depends on materials used. Please contact us for detailed information.
The values given above represent typical measurements, not guaranteed ones.
2.Precautions in bonding
2.1Temperature profile in main-bonding of IC chip
Ex.)
Bonding condition: 200 degree C-5sec
Head setting temperature: 220 degree C
Chip size: 1.7mm x 17.2mm x 0.55mmt
Thickness of glass substrate: 0.7mmt
Caution: Temperature should reach at more than
90% of targeting ACF temperature within first 2
seconds.
2.2Measurement of ANISOLM temperature
Bonding head
Temperature recorder
2.3Bonding head
(1) In order to press equally, make sure bonding head is even and parallel to the surface.
(2) Use slightly wider head than IC chip. Example; Chip width 2.0mm Head width 2.5mm
2.4Misalignment of opposite circuits
Make sure opposite circuits are well aligned and matched each other.
3. Connection reliability 3.1
Measurement
(1) Used materials for measurement
/ Test chip A: Min. contact area 2,500um2 (Bump size: 50 x 50um, IC size: 1.7 x 17 x 0.55mm) / Test chip B: Min. contact area 2,025um2 (Bump size: 45 x 45um, IC size: 1.2 x 10 x 0.55mm) / Test board: ITO coated glass(ITO thickness: 0.2um, Surface resistance: 10ohm/ ) (2) Measurement of connection resistance (refer to the diagram below)
/ Four-probe measurement (Circuit resistance can be cancelled) / Measuring current: 1mA
Four probe measurement in COG interconnection
ACF
3.2Test results
ACF : AC-8955YW-23
Lamination condition : 80degC 1MPa 2sec
Main bonding condition : 210degC 80MPa 5sec
(1)Min. contact area: 2,500 um2 (IC size; 1.7 x 17mm)
/ High temperature humidity test (85degC85%RH)
/ Temperature cycling test (-40 / 100degC)
(2)Min. contact area: 2,025 um2 (IC size; 1.2 x 10mm)
/ High temperature humidity test (85degC85%RH)
/ Temperature cycling test (-40 / 100degC)
4.Insulation reliability (In-situ bias test)
4.1Measurement
(1)Used materials for measurement
/ Test chip C: Min. space 15, 12, 10um (Pitch: 38um, IC size: 1.9 x 15 x 0.55mm)
/ Test board: ITO coated glass(ITO thickness: 0.2um, Surface resistance: 10ohm/ )
(2)Measurement of insulation resistance
After main bonding IC chip onto glass substrate using ACF, the sample was set in constant temperature humidity chamber. 20V was kept being applied between comb-shaped circuits during this in-situ testing and insulation resistance between comb-shaped circuits was monitored and recorded.
/ Test condition: 40degC90%RH
/ V oltage: 20V
Bump configuration
20V
4.2Test results
ACF : AC-8955YW-23
Lamination condition : 80degC 1MPa 2sec
Main bonding condition : 210degC 80MPa 5sec
Appearances of ITO lines after bias testing
(after 50hrs)
40degC90%RH/20V
5.Particle counts on bump
5.1Measurement
(1)Used materials for measurement
/ Test chip C: Bump size 3,000um2 (30 x 100um), IC size: 1.9 x 15 x 0.55mm
/ Test chip D: Bump size 2,000um2 (20 x 100um), IC size: 1.6 x 15 x 0.55mm)
/ Test board: ITO coated glass(ITO thickness: 0.2um, Surface resistance: 10ohm/ )
(2)Measurement of particle counts on bump
After main bonding IC chip onto test glass, particle counts on bump was measured by optical microscope.
5.2Test result
Particle counts on bump
Particle counts on bump
Bump size
Average Stdev Ave 3Stdev Ave 4.5Stdev 3,000 un2 30 x 100um 26 3.3 16.4 11.5
2,000um2 20 x 100um 17 3.1 7.7 3.1
1,500um2 *1 14 2.9 4.9
0.5
*1 Particle counts at 1,500um2 is a calculated data based on the data at 2,000um2 and 3,000um2.
6.Physical properties
Item Unit
AC-8955YW
Tg *1 DegC 145
Elastic modulus GPa 1.9
C.T.E *2 Ppm/degC 65
Water absorption rate Wt% 1.0
Conditions
*1 Measured with DVE; Dynamic Visco-Elastic Analyzer
Test conditions: Fully cured sample, Tensile mode, 10Hz Frequency, 10 /min
*2 Measured with TMA; Thermal Mechanical Analyzer
Test conditions: Fully cured sample, Tensile mode, 10 /min, Load 5gf
7.Reaction rate
Measuring method:
Each specimen was heated and hardened in oil kept at a specified temperature for a specified
time, the amount of heat generated was measured with a DSC unit, and the reaction rate was
determined with the following formula;
Reaction rate = (Q0-Q T)/Q0 100
Q0 initial amount of heat generated
Q T amount of heat generated after hardening
Reaction rate of AC-8955YW