RB160VA-40TR中文资料
Diodes
Rev.D 1/3
Schottky barrier diode
RB160VA-40
z Applications General rectification
z Features
1) Small mold type. (TUMD2) 2) Low V F , Low I R . 3) High reliability .
z Construction
Silicon epitaxial planar
z Structure
z Absolute maximum ratings (T a=25°C)
z Electrical characteristics (T a=25°C)
Diodes
Rev.D 2/3
z Electrical characteristic curves (T a=25°C)
FORWARD VOLTAGE：VF(mV)VF-IF CHARACTERISTICS F O R W A R D C U R R E N T :I F (m A )
R E V E R S E C U R R E N T :I R (u A )
REVERSE VOLTAGE：VR(V)VR-IR CHARACTERISTICS C A P A C I T A N C E B E T W E E N T E R M I N A L S :C t (p F )
REVERSE VOLTAGE:VR(V)VR-Ct CHARACTERISTICS
VF DISPERSION MAP F O R W A R D V O L T A G E :V F (m V )
R E V E R S E C U R R E N T :I R (u A )
IR DISPERSION MAP
C A P A C I T A N C E B E T W E E N T E R M I N A L S :C t (p F )
Ct DISPERSION MAP
IFSM DISPERSION MAP
P E A K S U R G E F O R W A R D C U R R E N T :I F S M (A )
P E A K S U R G E F O R W A R D C U R R E N T :I F S M (A )
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
P E A K S U R G E F O R W A R D C U R R E N T :I F S M (A )
TIME:t(ms)
IFSM-t CHARACTERISTICS
TIME:t(s)Rth-t CHARACTERISTICS
T R A N S I E N T T H A E R M A L I M P E D A N C E :R t h (℃/W )
F O R W A R D P O W E R D I S S I P A T I O N :P f (W )
AVERAGE RECTIFIED FORWARD CURRENT：Io(A)Io-Pf CHARACTERISTICS R E V E R S E P O W E R D I S S I P A T I O N :P R (W )
REVERSE VOLTAGE:VR(V)VR-P R CHARACTERISTICS
0.0010.010.1101002003004005006000.001
0.010.11
10100100010000100000
010*********
100
1000
1020
30
480490500510
520530
0510
15
20
25
30100
110120130140150
160170180190200051015
2005101520110
100
0510********
1
10
100
10
1001000
0.0010.1101000
0.10.2
0.3
0.4
0.5
0.60.70.8
0.9100.51 1.52
00.1
0.2
0.3
10
20
30
40
Diodes
Rev.D 3/3
AMBIENT TEMPERATURE:Ta(℃)
Derating Curve?(Io-Ta)
A V E R A
G E R E C T I F I E D F O R W A R D C U R R E N T :I o (A )
CASE TEMPARATURE:Tc(℃)Derating Curve?(Io-Tc)
255075100125150
00.5
1
1.5
2
25
50
75
100
125
150
Appendix1-Rev2.0
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Appendix