PN5134_J18Z中文资料
Absolute Maximum Ratings* T A =25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaird.
NOTES:
1.These ratings are based on a maximum junction temperature of 150 degrees C.
2.These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics T A =25°C unless otherwise noted
* Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2.0%
Symbol Parameter
Value Units V CEO Collector-Emitter Voltage 10V V CBO Collector-Base Voltage 20V V EBO Emitter-Base Voltage 3.5V I C Collector Current
- Continuous
500mA T J, T STG
Operating and Storage Junction Temperature Range
- 55 ~ 150
°C
Symbol
Parameter
Test Condition
Min.Max.
Units Off Characteristics
V (BR)CEO Collector-Emitter Breakdown Voltage *I C = 10mA, I B = 010V V (BR)CBO Collector-Base Breakdown Voltage I C = 10μA, I E = 020V V (BR)EBO Emitter-Base Breakdown Voltage I E = 10μA, I C = 0 3.5V V (BR)CES Collector-Emitter Breakdown Voltage I C = 10μA
20
V I CBO Collector Cut-off Current V CB = 15V, I E = 0, T A = 65°C 10μA I CES
Collector Cutoff Current
V CB = 15V, I C = 00.4μA
On Characteristics
h FE DC Current Gain V CE = 1.0V, I C = 10mA V CE = 0.4V, I C = 30mA 2015150V CE (sat)Collector-Emitter Saturation Voltage I C = 10mA, I B = 1.0mA I C = 10mA, I B = 3.3mA 0.250.20V V V BE (sat)
Base-Emitter Saturation Voltage
I C = 10mA, I B = 1.0mA I C = 10mA, I B = 3.3mA 0.700.720.91.1V V Small Signal Characteristics C ob Output Capacitance V CB = 5.0V, f = 1.0MHz
4.0
pF
h fe Small Signal Current Gain I C = 10mA, V CE = 10V, f = 100MHz 2.5
Switching Characteristics
t s Storage Time I C = I B1 = I B2 = 15mA 18ns t on Turn-on Time V CC = 3.0V, I C = 10mA I B1 = 3.3mA
18ns t d Delay Time 14ns t r Rise Time 12ns t off Turn-off Time V CC = 3.0V, I C = 10mA I B1 = I B2 = 3.3mA
18ns t s
Storage Time
13
ns t f
Fall Time 13
ns
PN5134
NPN General Purpose Amplifier
?This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300mA.
1. Emitter
2. Base
3. Collector
TO-92
1
Derate above 25°C 5.0mW/°C RθJC Thermal Resistance, Junction to Case83.3°C/W RθJA Thermal Resistance, Junction to Ambient200°C/W
PN5134
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PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
No Identification Needed Full Production
This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.Obsolete Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.
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