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April 2002

STP75NF75L

STB75NF75L STB75NF75L-1

N-CHANNEL 75V - 0.009 ? - 75A D 2PAK/I 2PAK/TO-220

STripFET? II POWER MOSFET

s TYPICAL R DS (on) = 0.009?

s EXCEPTIONAL dv/dt CAPABILITY s 100% AVALANCHE TESTED s

LOW THRESHOLD DRIVE

DESCRIPTION

This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements .

APPLICATIONS

s SOLENOID AND RELAY DRIVERS s DC MOTOR CONTROL s DC-DC CONVERTERS

s AUTOMOTIVE ENVIRONMENT

TYPE V DSS R DS(on)I D STB75NF75L/-1STP75NF75L

75 V 75 V

<0.011 ?<0.011 ?

75 A 75 A

ABSOLUTE MAXIMUM RATINGS

(?) Current limited by package

(??) Pulse width limited by safe operating area.(1)I SD ≤

75A, di/dt ≤ 500A/μs, V DD ≤ V (BR)DSS , T j ≤ T JMAX.(2) Starting T j = 25 o C, I D = 37.5A, V DD = 30V

Symbol Parameter

Value Unit V DS Drain-source Voltage (V GS = 0)75V V DGR Drain-gate Voltage (R GS = 20 k ?)75V V GS Gate- source Voltage

± 15V I D (?)Drain Current (continuous) at T C = 25°C 75A I D Drain Current (continuous) at T C = 100°C 70A I DM (??)Drain Current (pulsed)300A P tot Total Dissipation at T C = 25°C 300W Derating Factor

2W/°C dv/dt (1)Peak Diode Recovery voltage slope 20V/ns E AS (2)Single Pulse Avalanche Energy 680mJ T stg Storage Temperature

-55 to 175

°C

T j

Max. Operating Junction Temperature

STB75NF75L/-1 STP75NF75L

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THERMAL DATA

ELECTRICAL CHARACTERISTICS (T case = 25 °C unless otherwise specified)OFF

ON (*)

DYNAMIC

Rthj-case Rthj-amb

T l

Thermal Resistance Junction-case Thermal Resistance Junction-ambient

Maximum Lead Temperature For Soldering Purpose

Max Max Typ

0.562.5300

°C/W °C/W °C

Symbol Parameter

Test Conditions

Min.Typ.

Max.

Unit V (BR)DSS Drain-source

Breakdown Voltage I D = 250 μA

V GS = 0

V I DSS

Zero Gate Voltage

Drain Current (V GS = 0)V DS = Max Rating

V DS = Max Rating T C = 125°C 110μA μA I GSS

Gate-body Leakage Current (V DS = 0)

V GS = ± 15 V

±100

Symbol Parameter

Test Conditions

Min.Typ.

Max.Unit V GS(th)Gate Threshold Voltage V DS = V GS I D = 250 μA 1

2.5V R DS(on)

Static Drain-source On Resistance

V GS = 10 V I D = 37.5 A V GS = 5 V

I D = 37.5 A

0.0090.0100.0110.013

Symbol Parameter

Test Conditions

Min.

Typ.Max.

Unit g fs (*)Forward Transconductance V DS = 15 V

I D =37.5 A

120S C iss C oss C rss

Input Capacitance Output Capacitance Reverse Transfer Capacitance

V DS = 25V, f = 1 MHz, V GS = 0

4300660205

pF pF pF

3/11

STB75NF75L/-1 STP75NF75L

SWITCHING ON

SWITCHING OFF

SOURCE DRAIN DIODE

Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.(?)Pulse width limited by safe operating area.

Symbol Parameter

Test Conditions

Min.

Typ.Max.

Unit t d(on)t r Turn-on Delay Time Rise Time

V DD = 40 V

I D = 37.5 A R G =4.7 ? V GS = 4.5 V (Resistive Load, Figure 3)35150ns ns Q g Q gs Q gd

Total Gate Charge Gate-Source Charge Gate-Drain Charge

V DD = 60V I D = 75 A V GS = 5V

751831

90nC nC nC

Symbol Parameter

Test Conditions

Min.

Typ.Max.

Unit t d(off)t f

Turn-off Delay Time Fall Time

V DD = 40 V

I D = 37.5 A R G =4.7?, V GS = 4.5 V (Resistive Load, Figure 3)

11060

ns ns

Symbol Parameter

Test Conditions

Min.

Typ.

Max.Unit I SD I SDM (?)Source-drain Current

Source-drain Current (pulsed)75300A A V SD (*)Forward On Voltage I SD = 75 A

V GS = 0

1.3

V t rr Q rr I RRM

Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current

I SD = 75 A

di/dt = 100A/μs V DD = 20 V T j = 150°C (see test circuit, Figure 5)

1003807.5

ns nC A

ELECTRICAL CHARACTERISTICS (continued)

STB75NF75L/-1 STP75NF75L

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Fig. 3: Switching Times Test Circuits For Resistive

Fig. 5: Test Circuit For Inductive Load Switching

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STB75NF75L/-1 STP75NF75L

DIM.mm.

inch.

MIN.TYP. MAX.

MIN.TYP. TYP .

A 4.4 4.60.1730.181A1 2.49 2.690.0980.106

A20.030.230.0010.009B 0.70.930.0280.037B2 1.14 1.70.0450.067C 0.450.60.0180.024C2 1.21 1.360.0480.054D 8.95

9.35

0.352

0.368

D18

0.315

E 1010.4

0.394

0.409

E18.50.334

G 4.88 5.280.1920.208L 1515.850.5910.624L2 1.27 1.40.0500.055L3 1.4 1.750.0550.069M 2.4

3.2

0.094

0.126

R 0.4

0.016

0°8°

0°

8°

D 2PAK MECHANICAL DATA

STB75NF75L/-1 STP75NF75L

10/11

DIM.

mm inch

MIN.MAX.MIN.MAX.

A010.510.70.4130.421

B015.715.90.6180.626

D 1.5 1.60.0590.063

D1 1.59 1.610.0620.063

E 1.65 1.850.0650.073

F11.411.60.4490.456

K0 4.8 5.00.1890.197

P0 3.9 4.10.1530.161

P111.912.10.4680.476

P2 1.9 2.100750.082

R50 1.574

T0.250.35.0.00980.0137

W23.724.30.9330.956

DIM.

mm inch

MIN.MAX.MIN.MAX.

A33012.992

B 1.50.059

C12.813.20.5040.520

D20.20.795

G24.426.40.960 1.039

N100 3.937

T30.4 1.197

BASE QTY BULK QTY

10001000

REEL MECHANICAL DATA

* on sales type

TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)*

D2PAK FOOTPRINT

TAPE MECHANICAL DATA

STB75NF75L/-1 STP75NF75L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted

by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not

authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

The ST logo is registered trademark of STMicroelectronics

All other names are the property of their respective owners.

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