AM42-0007_1中文资料

14.0 - 14.5 GHz

V5

Features

? High Linear Gain: 22 dB Typical

? High Saturated Output Power: +33 dBm Typical ? High Power Added Efficiency: 22% Typical ? High P 1dB : 32 dBm Typ.

? 50 ? Input/Output Broadband Matched ? Integrated Output Power Detector

? Lead-Free Ceramic Bolt Down Package

? RoHS* Compliant and 260°C Reflow Compatible

Description

M/A-COM’s AM42-0007 is a three-stage MMIC linear power amplifier in a lead-free, ceramic bolt down style hermetic package. The AM42-0007 employs a fully matched chip with internally decoupled gate and drain bias networks and an output power detector. The AM42-0007 is designed to be operated from a constant voltage drain supply.

The AM42-0007 is designed for use as an output stage or a driver, in applications for VSAT systems. This design is fully monolithic and requires a minimum of external components.

M/A-COM’s AM42-0007 is fabricated using a mature 0.5 micron GaAs MESFET process. The process features full passivation for increased performance and reliability. This product is 100% RF tested to ensure compliance to performance specifications.

Ordering Information

Part Number

Package

AM42-0007

Ceramic Bolt Down Package

Pin Configuration

* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. Pin No.

Pin Name

Description

1 GND DC and RF Ground

2 GND DC and RF Ground

3 IN RF Input

4 V GG Gate Supply

5 GND DC and RF Ground

6 V DD Voltage Drain Supply 7

V DET Output Power Detector

8 OUT RF Output 9 GND DC and RF Ground 10

GND

DC and RF Ground

GND GND V GG RF IN GND

V DD

V DET RF OUT GND GND Functional Schematic

14.0 - 14.5 GHz

V5

Typical Bias Configuration 5,6,7,8,9

Absolute Maximum Ratings 2,3,4

Parameter

Absolute Maximum

V DD 12 Volts V GG

-10 Volts Power Dissipation 13.2 W RF Input Power +23 dBm Channel Temperature 150°C Storage Temperature

-65°C to +150°C

I DS

2100 mA

2. Exceeding any one or combination of these limits may cause permanent damage to this device.

3. M/A-COM does not recommend sustained operation near these survivability limits.

4. Case Temperature (T C ) = +25°C.

Electrical Specifications: T A = +25°C, V DD = +9 V, V GG =- 5.0 V, Z 0 = 50Ω, F = 14.0-14.5 GHz

Parameter

Test Conditions

Units

Min.

Typ.

Max.

Linear Gain P IN < 0 dBm dB 19 22 — Input VSWR P IN < 0 dBm Ratio — 2.5:1 2.7:1 Output VSWR P IN < 0 dBm Ratio — 2.7:1 — Saturated Output Power P IN = +14 dBm

dBm — 33 — Output Power at P1dB

— dBm 31 32 — Output IP31

dBm — 41 — Power Added Efficiency

P IN = +14 dBm % — 22 — Bias Current P IN = +14 dBm mA — 18 25 Thermal Resistance 25°C Heat Sink °C/W — 9.5 — Detector Output Voltage

R L = 10 K ?, P OUT = +31dBm

V

—

+3.5

—

Handling Procedures

Please observe the following precautions to avoid damage:

Static Sensitivity

Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices.

1. IP 3 is measured with two +24 dBm output tones @ 1 MHz spacing

5. Nominal bias is obtained by first connecting –5 volts to pin 4 (V GG ), followed by connection +9 volts to pin 6 (V DD ). Note sequence.

6. RF ground and thermal interface is the flange (case bottom). Adequate heat sinking is required.

7. No DC bias voltage appears at the RF ports.

8. For optimum IP3 performance, the V DD bypass capacitors should be placed within 0.5 inches of pin 6.

9. Resistor and capacitors surrounding the amplifier are suggestions and not included as part of the AM42-0007.

V DD 6

3.3 μF

RF Out 8

RF In 3

0.01 μF

V GG 4

GND 1,2,5,9,100.01 μF

AM42-0007

V DET

7

10 K ?

14.0 - 14.5 GHz

V5

Input and Output Return Loss vs. Frequency

Detector Voltage vs. Output Power @ 14.25 GHz

Typical Performance Curves @ +25°C

PAE vs. Frequency @ P IN = +14 dBm

Linear Gain vs. Frequency

-15

-551525

10

12

14

16

18

Frequency (GHz)

-15

-5

5

15

25

1012141618

S11

S22

Frequency (GHz)

Output Power vs. Frequency @ P IN = +14 dBm

25

2729313335

12131415

16

Frequency (GHz)

Output Power vs. Input Power @ 14.25 GHz

252729

313335

010

20

30

40

50

4

8

12

16

Output Power (dBm)

PAE (%)

Input Power (dBm)0

1

2

3

4

5

6

19212325272931

33

Output Power (dBm)

10

20

30

40

50

12131415

16

Frequency (GHz)

14.0 - 14.5 GHz V5

?

Reference Application Note M538 for lead-free solder reflow

recommendations.

Meets JEDEC moisture sensitivity level 1 requirements.