HTT1115EFTL-E中文资料
HTT1115E
Silicon NPN Epitaxial Twin Transistor
REJ03G0838-0200
(Previous ADE-208-1439A)
Rev.2.00 Aug.10.2005
Features
? Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm)
Q1: Equivalent Buffer transistor Q2: Equivalent OSC transistor
2SC5700 2SC5757
Outline
RENESAS Package code: PXSF0006LA-A (Package name: EMFPAK-6)
1. Collector Q1
2. Emitter Q1
3. Collector Q2
4. Base Q2
5. Emitter Q2
6. Base Q1
6
5
4
3
2
1
B1E2B2C1E1C2Pin Arrangement
Q1
Q2
1
23
4
5
6
Marking is “F”.
Absolute Maximum Ratings
(Ta = 25°C)
Ratings
Item Symbol Q1 Q2
Unit
Collector to base voltage V CBO 15 10 V Collector to emitter voltage V CEO 4 3.5 V Emitter to base voltage V EBO 1.5 1.5 V Collector current I C 50 80 mA Collector power dissipation P C Total 200* mW Junction temperature Tj 150 150 °C Storage temperature Tstg –55 to +150 –50 to +150 °C Note: Value on PCB. (FR–4 (13 x 13 x 0.635 mm)).
Electrical Characteristics (Q1)
(Ta = 25°C)
Item Symbol
Min Typ Max Unit Test conditions Collector to base breakdown voltage V (BR)CBO 15 ? ? V I C = 10 μA, I E = 0 Collector cutoff current I CBO ? ? 0.1 μA V CB = 15 V, I E = 0
Collector cutoff current I CEO
?
? 1 μA V CE = 4 V, R BE = infinite
Emitter cutoff current I EBO ? ? 0.2 μA V EB = 0.8 V, I C = 0 DC current transfer ratio
h FE 100 130 170 ? V CE = 1 V, I C = 5 mA Reverse transfer capacitance C re ? 0.3 0.45pF V CB = 1 V, f = 1 MHz
Emitter ground
Gain bandwidth product f T 10 12 ? GHz V CE = 1 V, I C = 5 mA, f = 1 GHz Forward transfer coefficient |S 21|2 13 16 ? dB Noise figure NF ? 1.0 2.0 dB
V CE = 1 V, I C = 5 mA,
f = 900 MHz, ΓS = ΓL = 50 ?
Electrical Characteristics (Q2)
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown voltage V (BR)CBO 10 ? ? V I C = 10 μA, I E = 0 Collector cutoff current I CBO ? ? 0.6 μA V CB = 10 V, I E = 0 Collector cutoff current I CEO ? ? 0.2 μA V CE = 3.5 V, R BE = infinite Emitter cutoff current I EBO ? ? 0.1 μA V EB = 1.5 V, I C = 0 DC current transfer ratio h FE 80 100 130 ? V CE = 1 V, I C = 5 mA Reverse transfer capacitance C re ? 0.8 1.1 pF V CB = 1 V, f = 1 MHz
Emitter ground
Gain bandwidth product f T 4 6 ? GHz V CE = 1 V, I C = 5 mA, f = 1 GHz
Forward transfer coefficient |S 21|2
7 10 ? dB Noise figure NF ? 1.5 2.3 dB
V CE = 1 V, I C = 5 mA,
f = 900 MHz ΓS = ΓL = 50 ?
Main Characteristics (Q1)
00.40.61234Collector to Emitter Voltage V CE (V)Base to Emitter Voltage V 0.21001020Collector Current I C (mA)DC Current Transfer Ratio vs.
Collector Current
2
5
50V = 1 V
CE
Collector to Base Voltage V 1.2R e v e r s e T r a n s f e r C a p a c i t a n c e C r e (p F )
Reverse Transfer Capacitance vs.
Collector to Base Voltage
0.1
0.20.30.40.500.40.8I E f = 1 MHz
B )
S 21 Parameter vs. Collector Current
1620
Gain Bandwidth Product vs.
Collector Current
V f = 1 GHz
V CE = 2 V
Main Characteristics (Q2)
100
10
20
Collector Current I C (mA)DC Current Transfer Ratio vs.
Collector Current
2
5
50
V CE = 1 V
00.40.60.5 1.0 1.5 3.5
Collector to Emitter Voltage V CE (V)Base to Emitter Voltage V 0.22.52.0 3.0
1.2Collector to Base Voltage V R e v e r s e T r a n s f e r C a p a c i t a n c e C r e (p F )
Reverse Transfer Capacitance vs.
Collector to Base Voltage
0.81.01.21.41.600.40.8I f = 1 MHz
0.6
Gain Bandwidth Product vs.
Collector Current
f = 1 GHz
V = 2 V B )
S 21 Parameter vs. Collector Current
1620
f = 900 MHz
Main Characteristics (Common)
Package Dimensions
A 2
I 1
b 2
A
A 1
S
b A-A Section
b 1
c 1
e 1
Pattern of terminal position areas
A A 1A 2b b 1c c 1D E e H E L L P x y b 2e 1I 1
Reference Symbol
Ordering Information
Part Name Quantity
Shipping Container
HTT1115EFTL-E 5000
φ 178 mm Reel, 8 mm Emboss Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
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