BTA06-600B中文资料
Absolute Maximum Ratings ( T J = 25°C unless otherwise specified )
Symbol
Parameter
Condition Ratings
Units
V DRM Repetitive Peak Off-State Voltage 600 V I T(RMS)R.M.S On-State Current T C = 94 °C
6.0A I TSM Surge On-State Current One Cycle, 50Hz/60Hz, Peak, Non-Repetitive
60/66A I 2t I 2t
18A 2s P
GM Peak Gate Power Dissipation 3.0W P G(AV)Average Gate Power Dissipation 0.3W I GM Peak Gate Current 2.0A V GM Peak Gate Voltage
10
V V ISO Isolation Breakdown Voltage(R.M.S.) A.C. 1 minute 1500V T J Operating Junction Temperature - 40 ~ 125°C T STG
Storage Temperature - 40 ~ 150
°C Mass
2.0
g
Mar, 2004. Rev. 0
Features
◆ Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( I T(RMS)= 6 A )◆ High Commutation dv/dt
◆ Isolation Voltage ( V ISO = 1500V AC )
General Description
This device is fully isolated package suitable for AC switching
application, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay.
This device is approved to comply with applicable require-ments by Underwriters Laboratories Inc.
2.T2
3.Gate
1.T1
Symbol
○
○
○
▼▲
1/6
BTA06-600B
SemiWell Semiconductor
Bi-Directional Triode Thyristor
copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
UL : E228720
Preliminary
Electrical Characteristics
Symbol Items Conditions
Ratings
Unit Min.Typ.
Max.
I DRM Repetitive Peak Off-State
Current
V D = V DRM, Single Phase, Half Wave
T J = 125 °C──
1.0mA
V TM Peak On-State Voltage I T = 8 A, Inst. Measurement── 1.5V
I+GT1Ⅰ
Gate Trigger Current V D = 6 V, R L=10Ω──20
mA
I-GT1Ⅱ──20 I-GT3Ⅲ──20
V+GT1Ⅰ
Gate Trigger Voltage V D = 6 V, R L=10Ω── 1.5
V
V-GT1Ⅱ── 1.5
V-GT3Ⅲ── 1.5
V GD Non-Trigger Gate Voltage T J = 125 °C, V D = 1/2 V DRM0.2──V
(dv/dt)c Critical Rate of Rise Off-State
Voltage at Commutation
T J = 125 °C, [di/dt]c = -3.0 A/ms,
V D=2/3 V DRM
5.0──V/?
I H Holding Current─10─mA
R th(j-c)Thermal Impedance Junction to case── 3.8°C/W BTA06-600B
2/6
Fig 4. On State Current vs.
BTA06-600B
4/6
Fig 9. Gate Trigger Characteristics Test Circuit
G
G
G
Test Procedure ⅠTest Procedure ⅡTest Procedure Ⅲ
BTA06-600B
Dim.mm Inch Min.Typ.
Max.Min.Typ.
Max.A 10.410.60.4090.417B 6.18 6.440.2430.254C 9.559.810.3760.386D 13.4713.730.5300.540E 6.05 6.150.2380.242F 1.26 1.360.0500.054G 3.17 3.430.1250.135H 1.87 2.130.0740.084I 2.57 2.830.1010.111
J 2.540.100K 5.08
0.200
L 2.51 2.620.0990.103M 1.25 1.550.0490.061N 0.450.630.0180.025O
0.6
1.0
0.024
0.039
φ 3.70.146φ1 3.20.126φ2
1.5
0.059
TO-220F Package Dimension
5/6
BTA06-600B
Dim.
mm Inch
Min.Typ.Max.Min.Typ.Max.
A10.410.60.4090.417
B 6.18 6.440.2430.254
C9.559.810.3760.386
D8.48.660.3310.341
E 6.05 6.150.2380.242
F 1.26 1.360.0500.054
G 3.17 3.430.1250.135
H 1.87 2.130.0740.084
I 2.57 2.830.1010.111
J 2.540.100
K 5.080.200
L 2.51 2.620.0990.103
M 1.25 1.550.0490.061
N0.450.630.0180.025
O0.6 1.00.0240.039
P 5.00.197
φ 3.70.146
φ1 3.20.126
φ2 1.50.059
TO-220F Package Dimension, Forming
6/6
BTA06-600B