BAR 63-03W中文资料
Silicon PIN Diode
of RF signals
Low forward resistance
Very low capacitance
For frequencies up to 3 GHz
Type Marking Pin Configuration Package BAR 63-03W G 1 = C 2 = A SOD-323 Maximum Ratings
Value
Parameter Symbol Unit Diode reverse voltage50
V R V Forward current I F100mA Total power dissipation, T S 115°C P tot250mW Operating temperature range T op-55 ... 150°C Storage temperature T stg-55 (150)
Thermal Resistance
Junction - ambient 1)R thJA 235K/W Junction - soldering point
R thJS 155
1) Package mounted on alumina 15mm x 16.7mm x 0.7mm
Electrical Characteristics at T A = 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min.typ.max.
DC characteristics
Breakdown voltage
I(BR) = 5 μA
V(BR)50--V
Reverse current
V R = 20 V
I R--50nA Forward voltage
I F = 100 mA
V F-0.95 1.2V AC characteristics
Diode capacitance
V R = 0 V, f = 100 MHz V R = 5 V, f = 1 MHz C T
-
-
0.3
0.21
-
0.3
pF
Forward resistance
I F = 5 mA, f = 100 MHz I F = 10 mA, f = 100 MHz r f
-
-
1.2
1
2
-
Charge carrier life time
I F = 10 mA, I R = 6 mA, I R = 3 mA
τrr-75-ns Series inductance L s-2-nH
Diode capacitance C T = f (V R)
f = 1MHz
R Forward resistance r f = f (I F)
f = 100MHz
F
10mA
101010102
Forward current I F = f (T A*;T S) * mounted on alumina
mA I
F
Permissible Pulse Load R thJS = f (t p )
10 10 10 10 K/W
R t h J S
Permissible Pulse Load I Fmax / I FDC = f (t p )
I F m a x / I F D C