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SEMIX101GD066HDS_07中文资料

SEMiX ?13s Trench IGBT Modules

SEMiX 101GD066HDs

Preliminary Data

Features

Typical Applications ! " # $

$ Remarks

% &'() "*

+ % , % - &(.)

#/

0 1 %, %

GD

Absolute Maximum Ratings '() 2 %

Symbol Conditions Values

Units

IGBT

- '() 4.. $ - &5() '() &6.7 8.)

&.(7$ #!$ #! '"$

'..7 /

9'.

:4. ; / <&( ; =4..

- &(.) 4

>

Inverse Diode

$? - &5() '() &(.7 8.)

&&.7$?#!$?#! '"$? '..7$? !

&. ; *

- '() (..7Module

$ #! 4..7 -16.***@&5() 16.***@&'(

)

7 2& *

6...

Characteristics

'() 2 %

Symbol Conditions min.

typ.

max.Units

IGBT

/ / 2$ &24 7(28

$ / . 2

- '() .26( 7 . - '() .2A & - &(.) .28(.2A / &(

- '() (2(A B - &(.)

82(&' B $ &..72 / &( - '() *

&26(&2A - &(.) *

&25'2&

42' ? '(2 / .

&! C

.2:A ? .2&8 ?D / / 18***@&( 8..

% &6. #/ 42'B :.. :( $ &..7: E % #/ 42'B - &(.)

66. (( 6

E # -1

$/F .26&GHI

SEMiX ?13s Trench IGBT Modules

SEMiX 101GD066HDs

Preliminary Data

Features

Typical Applications ! " # $

$ Remarks

% &'() "*

+ % , % - &(.)

#/

0 1 %, %

GD

Characteristics

Symbol Conditions min.typ.

max.

Units

Inverse Diode

? $? &..7; / .

- '() *&26&24 - &(.) *&26&24 ?. - '() &&2& - &(.) .28(.2A( ?

- '() 6( B - &(.)

(2(42(

B $##!$? &..7 - &(.)

&:.7D % H% :'..7H> &8> / 18 ; :.. 62(

E

# -1 J

% %

.2(&GHI Module

K '.

# L@ L *2 1 '() .25 B &'()

& B # 1 % .2.6

GHI ! 0 !( :(M ! !4

'2(

(M

:(.

Temperature sensor

#&.. &..) #'( (0B

.26A:9(N 0B F &..H&'(

# #&.. " OF &..H&'( &H 1&H &.. P; OGP;F

:((.9'N

G

This is an electrostatic discharge sensitive device (ESDS),international standard IEC 60747-1,Chapter IX.

This technical information specifies semiconductor devices but promises no

characteristics.No warranty or guarantee expressed or implied is made regarding delivery,performance or suitability.

Fig.1Typ.output characteristic,inclusive R CC'+EE'Fig.2Rated current vs.temperature I C =f (T C )

Fig.3Typ.turn-on /-off energy =f (I C )Fig.4Typ.turn-on /-off energy =f (R G )

Fig.5Typ.transfer characteristic Fig.6Typ.gate charge characteristic

Fig.7Typ.switching times vs.I C Fig.8Typ.switching times vs.gate resistor R G

Fig.9Typ.transient thermal impedance

Fig.10Typ.CAL diode forward charact.,incl.R CC'+EE'

Fig.11Typ.CAL diode peak reverse recovery current Fig.12Typ.CAL diode recovery charge

! Q&:

+ /J

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