DTS2301A

鼎日株式會社

Ding Day Co., LTD.

P-Channel Enhancement Mode Field Effect Transistor

D

S

G

ABSOLUTE MAXIUM RATINGS（T A=25℃ unless otherwise noted）

Parameter Symbol

Limit

Unit Drain-Source V oltage V DS -20 V

Gate-Source V oltage V GS ±12 V

I D -4.5

A Drain Current-Continuousa@Tj=125℃

- Pulse b d I DM -16 A Drain-source Diode Forward CurrentaI S -1.25

A Maximum Power DissipationaP D 1.25

W Operating Junction and Storage

Temperature Range T J,T STG -55

to

150 ←

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to Ambienta Rth

J A 100 ℃/W

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FEATURES

●Super high dense cell design for low R DS(ON)

●Rugged and reliable

●S imple drive requirement

●SOT-23 package

PRODUCT SUMMARY

V DSS I D R DS(ON) (mΩ) Typ

65@ V GS=-4.5V

-20V -4.5A

90 @ V GS=-2.5V

ELECTRICAL CHARACTERISTICS (T A =25℃ unless otherwise noted)

Parameter Symbol

Condition Min Typ Max Unit

OFF CHARACTERISTICS Drain-Source Breakdown V oltage BV DSS V GS =0V ,I D =-250μA -20 V Zero Gate V oltage Drain Current I DSS V DS =-16V ,V GS =0V 1 μA Gate-Body Leakage

I GSS

V GS =±10V ,V DS =0V ±100

nA

ON CHARACTERITICS

Gate Threshold V oltage

V GS (th) V DS =V GS ,I D =-250μA -0.5 -0.8 -1.5 V V GS =-4.5V ,I D =-4.2A 65 85

Drain-Source On-State Resistance R DS(ON) V GS =-2.5V ,I D =-2.0A

90 110 m Ω

Forward Transconductance ɡFS

V GS =-5V ,I D =-5A 5 S

DAYNAMIC CHARACTERISTICS Input Capacitance C ISS 586 pF Output Capacitance C OSS 101 pF Reverse Transfer Capacitance C RSS

V DS =-10V ,V GS =0V

f=1.0MH Z

59 pF

SWITCHING CHARACTERISISTICS Turn-On Delay Time t D(ON) 6.5 ns Rise Time

tr 32.1 ns Turn-Off Delay Time t D(OFF) 58.4 ns Fall Time tf V DD =-10V I D =-2.8A, V GEN =-4.5V R L =10ohm R GEN =6ohm

48 ns Total Gate Charge Q ɡ 6 nC

Gate-Source Charge Q ɡs 1.35 nC Gate-Drain Charge

Q ɡd

V DS =-10V ,I D =-3A

V GS =-4.5V

1.5 nC

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ELECTRICAL CHARACTERICS (TA=25℃ unless otherwise noted)

Parameter Symbol Condition Min Typ Max Unit

DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward V oltage

V SD

V GS =0V ,I S =-1.25A -0.81 -1.2 V

Notes

a. Surface Mounted on FR4 Board, t ≦10sec

b. Pulse Test: Pulse Width ≦300Us, Duty ≦2%

c. Guaranteed by design, not subject to production testing.

- V DS , Drain-to-Source Voltage (V) -V GS , Gate-to-source Voltage (V)

Figure 1.Output Characteristics Figure 2.Transfer Characteristics

- VGS, Drain-to Source Voltage

Figure3.Capacitance Figure4. On-Resistance Variation with

Temperature

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-V GS =2.5V

-V GS =10.5~3.5V

-V GS =1.5V

VGS=-4.5V ID=-4A

DTS2301A

0.1 1 10 20 50

鼎日株式會社

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