5962F9666302VEC中文资料

1

TM

File Number

4898

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-888-INTERSIL or 321-724-7143|Intersil and Design is a trademark of Intersil Corporation.|Copyright ? Intersil Corporation 2000

HS-26CLV31RH

Radiation Hardened 3.3V Quad Differential Line Driver

The Intersil HS-26CLV31RH is a radiation hardened 3.3V quad differential line driver designed for digital data

transmission over balanced lines, in low voltage, RS-422protocol applications.CMOS processing assures low power consumption,high speed,and reliable operation in the most severe radiation environments.

The HS-26CL V31RH accepts CMOS level inputs and converts them to differential outputs. Enable pins allow several devices to be connected to the same data source and addressed independently . The device has unique outputs that become high impedance when the driver is disabled or powered-down,maintaining signal integrity in multi-driver applications.Speci?cations for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC).The SMD numbers listed here must be used when ordering.Detailed Electrical Speci?cations for these devices are contained in SMD 5962-96663. A “hot-link” is provided on our homepage for downloading.

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Logic Diagram

Features

?Electrically Screened to SMD # 5962-96663?QML Quali?ed per MIL-PRF-38535 Requirements ? 1.2 Micron Radiation Hardened CMOS

-Total Dose. . . . . . . . . . . . . . . . . . . . .300 krad(Si)(Max)-Single Event Upset LET . . . . . . . . . . .100MeV/mg/cm 2)-Single Event Latch-up Immune ?Extremely Low Stand-by Current . . . . . . . . .100μA (Max)?Operating Supply Range . . . . . . . . . . . . . . . .3.0V to 3.6V ?CMOS Level Inputs . . . .V IH > (.7)(V DD ); V IL < (.3)(V DD )?Differential Outputs. . . . . . . . . . .V OH > 1.8V; V OL < 0.5V ?High Impedance Outputs when Disabled or Powered Down ?Low Output Impedance . . . . . . . . . . . . . . . . .10? or Less ?Full -55o C to 125o C Military T emperature Range

Pinouts

HS1-26CLV31RH (SBDIP)

CDIP2-T16TOP VIEW

HS9-26CLV31RH (FLATPACK)

CDFP4-F16TOP VIEW

Ordering Information

ORDERING NUMBER INTERNAL MKT. NUMBER TEMP.RANGE (o C)5962F9666302QEC HS1-26CLV31RH-8-55 to 1255962F9666302QXC HS9-26CLV31RH-8-55 to 125

5962F9666302V9A HS0-26CLV31RH-Q 255962F9666302VEC HS1-26CLV31RH-Q -55 to 1255962F9666302VXC

HS9-26CLV31RH-Q

-55 to 125HS1-26CLV31RH/PROTO HS1-26CL V31RH/PROTO -55 to 125HS9-26CLV31RH/PROTO HS9-26CL V31RH/PROTO

-55 to 125

ENABLE

ENABLE

AIN

AO BIN

BO CIN

CO DIN

DO DO

CO

BO

AO

1415169131211101234

5768

AIN AO AO ENABLE BO BO GND BIN V DD DO DO ENABLE CO CO CIN

DIN AIN AO AO ENABLE

BO BO BIN GND

2345678

1161514131211109

V DD DIN DO DO ENABLE CO CO CIN

Data Sheet

August 2000

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2

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certi?cation.

Intersil semiconductor products are sold by description only.Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-out notice.Accordingly,the reader is cautioned to verify that data sheets are current before placing https://www.wendangku.net/doc/2f9869737.html,rmation furnished by Intersil is believed to be accurate and reliable.However,no responsibility is assumed by Intersil or its subsidiaries for its use;nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products,see web site https://www.wendangku.net/doc/2f9869737.html,

Die Characteristics

DIE DIMENSIONS:

96.5 mils x 195 mils x 21 mils (2450 x 4950)INTERFACE MATERIALS:

Glassivation:

Type: PSG (Phosphorus Silicon Glass)Thickness: 8k ?±1k ?Metallization:

Bottom:Mo/TiW

Thickness: 5800?±1k?Top:AlSiCu (T op)

Thickness: 10k ?±1k ?

Substrate:AVLSI1RA Backside Finish:Silicon

ASSEMBL Y RELATED INFORMATION:Substrate Potential (Powered Up):V DD ADDITIONAL INFORMATION:Worst Case Current Density:<2.0 x 105A/cm 2Bond Pad Size:

110μm x 100μm

Metallization Mask Layout

HS-26CLV31RH

(14)DO (13)DO (12)ENABLE (11)CO (10)CO AO (2)AO (3)ENABLE (4)

BO (5)BO (6)

B I N (7)

N D (8)

C I N (9)

N D (8)

(1)A I N

(16)V D D

(15)D I N

(16)V D D

HS-26CLV31RH

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