TGF2022-06中文资料

DC - 20 GHz Discrete power pHEMT TGF2022-06

0.6mm x 0.35

Symbol

V+Positive Supply Voltage

V-Negative Supply Voltage Range I+Positive Supply Current

SYMBOL PARAMETER Power Tuned:

Parameter θJC Thermal Resistance

28

3032Vd = 12V, Id = 45mA Vd = 10V, Id = 45mA

28

3032Vd = 12V, Id = 45mA Vd = 10V, Id = 45mA

Linear Model for 0.6 mm Unit pHEMT cell

Lg Rg

Gate

Cgs

Unmatched S-parameters for 0.6 mm pHEMT Frequency s11

(GHz)dB

0.5-0.241

1-0.419

1.5-0.587

> @

Reflow process assembly notes:

?Use AuSn (80/20) solder with limited exposure to temperatures at or above 300