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IRFZ44N中文资料

Philips Semiconductors Product specification

N-channel enhancement mode IRFZ44N

TrenchMOS TM transistor

GENERAL DESCRIPTION

QUICK REFERENCE DATA

N-channel enhancement mode SYMBOL PARAMETER

MAX.UNIT standard level field-effect power transistor in a plastic envelope using V DS Drain-source voltage 55

V ’trench ’technology.The device I D Drain current (DC)

49A features very low on-state resistance P tot Total power dissipation 110W and has integral zener diodes giving T j

Junction temperature 175?C ESD protection up to 2kV.It is R DS(ON)

Drain-source on-state 22

m ?

intended for use in switched mode resistance V GS = 10 V

power supplies and general purpose switching applications.

PINNING - TO220AB

PIN CONFIGURATION

SYMBOL

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)SYMBOL PARAMETER

CONDITIONS MIN.MAX.UNIT V DS Drain-source voltage --55V V DGR Drain-gate voltage R GS = 20 k ?-55V ±V GS Gate-source voltage --20V I D Drain current (DC)T mb = 25 ?C -49A I D Drain current (DC)

T mb = 100 ?C -35A I DM Drain current (pulse peak value)T mb = 25 ?C -160A P tot

Total power dissipation

T mb = 25 ?C -110W T stg , T j

Storage & operating temperature

-- 55

175

ESD LIMITING VALUE

SYMBOL PARAMETER

CONDITIONS MIN.MAX.UNIT V C

Electrostatic discharge capacitor Human body model -2

voltage, all pins

(100 pF, 1.5 k ?)

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS TYP.MAX.UNIT R th j-mb Thermal resistance junction to -- 1.4K/W mounting base

R th j-a

Thermal resistance junction to in free air

-K/W

ambient

Philips Semiconductors Product specification

N-channel enhancement mode IRFZ44N

TrenchMOS TM transistor

STATIC CHARACTERISTICS

T j = 25?C unless otherwise specified SYMBOL PARAMETER

CONDITIONS

MIN.TYP.MAX.UNIT V (BR)DSS Drain-source breakdown V GS = 0 V; I D = 0.25 mA;55--V voltage

T j = -55?C

50--V V GS(TO)Gate threshold voltage V DS = V GS ; I D = 1 mA 2.0 3.0 4.0V T j = 175?C 1.0--V T j = -55?C -- 4.4I DSS Zero gate voltage drain current V DS = 55 V; V GS = 0 V;-0.0510μA T j = 175?C --500μA I GSS Gate source leakage current

V GS = ±10 V; V DS = 0 V

-0.041μA T j = 175?C --20μA ±V (BR)GSS Gate source breakdown voltage I G = ±1 mA;16--V R DS(ON)

Drain-source on-state V GS = 10 V; I D = 25 A -1522m ?resistance

T j = 175?C

m ?

DYNAMIC CHARACTERISTICS

T mb = 25?C unless otherwise specified SYMBOL PARAMETER

CONDITIONS MIN.TYP.MAX.UNIT g fs Forward transconductance V DS = 25 V; I D = 25 A

6--S C iss Input capacitance V GS = 0 V; V DS = 25 V; f = 1 MHz

-13501800pF C oss Output capacitance -330400pF C rss Feedback capacitance -155215pF Q g Total gate charge V DD = 44 V; I D = 50 A; V GS = 10 V

--62nC Q gs Gate-cource charge

--15nC Q gd Gate-drain (miller) charge --26nC t d on Turn-on delay time V DD = 30 V; I D = 25 A;-1826ns t r Turn-on rise time V GS = 10 V; R G = 10 ?-5075ns t d off Turn-off delay time Resistive load

-4050ns t f Turn-off fall time -3040ns L d Internal drain inductance Measured from contact screw on - 3.5-nH tab to centre of die

L d Internal drain inductance Measured from drain lead 6 mm - 4.5-nH from package to centre of die L s

Internal source inductance

Measured from source lead 6 mm -7.5

-nH

from package to source bond pad

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

T j = 25?C unless otherwise specified SYMBOL PARAMETER

CONDITIONS

MIN.TYP.MAX.UNIT I DR Continuous reverse drain --49A current

I DRM Pulsed reverse drain current --160A V SD Diode forward voltage I F = 25 A; V GS = 0 V -0.95 1.2V I F = 40 A; V GS = 0 V - 1.0-t rr Reverse recovery time I F = 40 A; -dI F /dt = 100 A/μs;-47-ns Q rr

Reverse recovery charge

V GS = -10 V; V R = 30 V

-0.15

-μC

Philips Semiconductors Product specification

N-channel enhancement mode IRFZ44N

TrenchMOS TM transistor

AVALANCHE LIMITING VALUE

SYMBOL PARAMETER

CONDITIONS

MIN.TYP.MAX.UNIT W DSS

Drain-source non-repetitive I D = 45 A; V DD ≤ 25 V;

110

unclamped inductive turn-off V GS = 10 V; R GS = 50 ?; T mb = 25 ?C

energy

Philips Semiconductors Product specification N-channel enhancement mode IRFZ44N TrenchMOS TM transistor

Philips Semiconductors Product specification

N-channel enhancement mode IRFZ44N

TrenchMOS TM transistor

Fig.11. Sub-threshold drain current.I D = f(V GS); conditions: T j = 25 ?C; V DS = V GS

Fig.12. Typical capacitances, C iss , C oss , C rss .C = f(V DS ); conditions: V GS = 0 V; f = 1 MHz

Fig.14. Typical reverse diode current.I F = f(V SDS ); conditions: V GS = 0 V; parameter T j

Fig.15. Normalised avalanche energy rating.

W DSS % = f(T mb ); conditions: I D = 49 A

012345

1E-06

1E-05

1E-04

1E-03

1E-02

1E-01

Sub-Threshold Conduction

typ

98%

00.20.4

0.60.81 1.2 1.4

100IF/A VSDS/V

Tj/C =

175

0.01

0.1

100

0.5

1.5

2.5

T h o u s a n d s p F

VDS/V

Ciss

Coss

Crss

100120140

160

180

Tmb / C

120 110 100 90 80

70 60 50 40 30 20

10 0 WDSS%

Philips Semiconductors Product specification N-channel enhancement mode IRFZ44N TrenchMOS TM transistor

MECHANICAL DATA

1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent

damage to MOS gate oxide.

2. Refer to mounting instructions for SOT78 (TO220) envelopes.

3. Epoxy meets UL94 V0 at 1/8".

Philips Semiconductors Product specification N-channel enhancement mode IRFZ44N TrenchMOS TM transistor

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of

this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information

Where application information is given, it is advisory and does not form part of the specification.

? Philips Electronics N.V. 1999

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.