5962F9862401VXC中文资料
ACS32MS
Radiation Hardened Quad 2-Input OR Gate
The Radiation Hardened ACS32MS is a Quad 2-Input OR Gate. For each gate, a HIGH level on either A or B input results in a HIGH level on the Y output.A LOW level on both the A and B inputs results in a LOW level on the Y output.All inputs are buffered and the outputs are designed for balanced propagation delay and transition times.
The ACS32MS is fabricated on a CMOS Silicon on Sapphire (SOS) process, which provides an immunity to Single Event Latch-up and the capability of highly reliable performance in any radiation environment. These devices offer signi?cant power reduction and faster performance when compared to ALSTTL types.
Speci?cations for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus(DSCC).The SMD numbers listed below must be used when ordering.
Detailed Electrical Speci?cations for the ACS32MS are contained in SMD 5962-98624. A “hot-link” is provided on our homepage with instructions for downloading. https://www.wendangku.net/doc/395088076.html,/data/sm/index.asp Features
?QML Quali?ed Per MIL-PRF-38535 Requirements
? 1.25 Micron Radiation Hardened SOS CMOS
?Radiation Environment
-Latch-Up Free Under any Conditions
-Total Dose. . . . . . . . . . . . . . . . . . . . . .3 x 105RAD (Si) -SEU Immunity. . . . . . . . . . . . .<1 x 10-10 Errors/Bit/Day -SEU LET Threshold . . . . . . . . . . . .>100MeV/(mg/cm2)
?Input Logic Levels . . . .V IL = (0.3)(V CC),V IH = (0.7)(V CC)?Output Current . . . . . . . . . . . . . . . . . . . . . . . .±8mA (Min)?Quiescent Supply Current . . . . . . . . . . . . . .100μA (Max)?Propagation Delay . . . . . . . . . . . . . . . . . . . . . .12ns (Max) Applications
?High Speed Control Circuits
?Sensor Monitoring
?Low Power Designs
Ordering Information
ORDERING NUMBER INTERNAL MKT. NUMBER TEMP. RANGE (o C)PACKAGE DESIGNATOR 5962F9862401VCC ACS32DMSR-03-55 to 12514 Ld SBDIP CDIP2-T14
ACS32D/SAMPLE-03ACS32D/SAMPLE-032514 Ld SBDIP CDIP2-T14 5962F9862401VXC ACS32KMSR-03-55 to 12514 Ld Flatpack CDFP4-F14 ACS32K/SAMPLE-03ACS32K/SAMPLE-032514 Ld Flatpack CDFP4-F14 5962F9862401V9A ACS32HMSR-0325Die N/A
Pinouts
ACS32MS (SBDIP) TOP VIEW
ACS32MS (FLATPACK) TOP VIEW
A1 B1 Y1 A2 B2 Y2 GND
V CC
B4
A4
Y4
B3
A3
Y3
1
2
3
4
5
6
7
14
13
12
11
10
9
8
14
13
12
11
10
9
8
2
3
4
5
6
7
1
A1
B1
Y1
A2
B2
Y2
GND
V CC
B4
A4
Y4
B3
A3
Y3 Data Sheet November 1998File Number4545
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143|Copyright ? Intersil Corporation 1999
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All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certi?cation. Intersil semiconductor products are sold by description only.Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-out notice.Accordingly,the reader is cautioned to verify that data sheets are current before placing https://www.wendangku.net/doc/395088076.html,rmation furnished by Intersil is believed to be accurate and reliable.However,no responsibility is assumed by Intersil or its subsidiaries for its use;nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products,see web site https://www.wendangku.net/doc/395088076.html,
Sales Of?ce Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204 Melbourne, FL32902
TEL:(321) 724-7000
FAX: (321) 724-7240EUROPE
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
ASIA
Intersil (Taiwan) Ltd.
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
Die Characteristics
DIE DIMENSIONS:
Size:2390μm x 2390μm (94 mils x 94 mils) Thickness:525μm±25μm (20.6 mils±1 mil) Bond Pad: 110μm x 110μm (4.3 x 4.3 mils) METALLIZATION:AL
Metal 1 Thickness: 0.7μm±0.1μm
Metal 2 Thickness: 1.0μm±0.1μm SUBSTRATE POTENTIAL:
Unbiased Insulator PASSIVATION
Type: Phosphorous Silicon Glass (PSG)
Thickness: 1.30μm±0.15μm
SPECIAL INSTRUCTIONS:
Bond V CC First
ADDITIONAL INFORMATION:
Worst Case Current Density:<2.0 x 105 A/cm2 Transistor Count:116
Metallization Mask Layout
ACS32MS
B1A1V CC B4
Y1 (3) A2 (4)
NC B2 (5)
(12) A4
(11) Y4
NC
(10) B3 (6)(7)(8)(9)
A3
Y3
GND
Y2
(2)(1)(14)(13)
ACS32MS
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