MOS管2SK4145资料功能详解

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DATA SHEET

Document No. D18760EJ2V0DS00 (2nd edition)

Date Published June 2007 NS Printed in Japan

2007

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DESCRIPTION

The 2SK4145 is N-channel MOS Field Effect Transistor designed for high current switching applications.

FEATURES

? Low on-state resistance

R DS(on) = 10 m Ω MAX. (V GS = 10 V, I D = 42 A) ? Low input capacitance C iss = 5300 pF TYP.

ORDERING INFORMATION

PART NUMBER LEAD PLATING

PACKING PACKAGE 2SK4145-S19-AY

Note

Pure Sn (Tin)

Tube 50 p/tube

TO-220 typ. 1.9 g

Note Pb-free (This product does not contain Pb in the external electrode).

ABSOLUTE MAXIMUM RATINGS (T A = 25°C)

Drain to Source Voltage (V GS = 0 V) V DSS 60 V Gate to Source Voltage (V DS = 0 V) V GSS ±20 V Drain Current (DC) (T C = 25°C) I D(DC) ±84 A Drain Current (pulse)

Note1

I D(pulse)

±215 A

Total Power Dissipation (T C = 25°C) P T1 84 W Total Power Dissipation (T A = 25°C) P T2 1.5 W Channel Temperature T ch 150 °C Storage Temperature T stg

?55 to +150

°C

Single Avalanche Current Note2

I AS 32 A Single Avalanche Energy

Note2

E AS 102 mJ

Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Starting T ch = 25°C, V DD = 30 V, R G = 25 Ω, V GS = 20 → 0 V, L = 100 μH

THERMAL RESISTANCE

Channel to Case Thermal Resistance R th(ch-C) 1.49 °C/W Channel to Ambient Thermal Resistance

R th(ch-A) 83.3 °C/W

Data Sheet D18760EJ2V0DS

2 ELECTRICAL CHARACTERISTICS (T A = 25°C)

CHARACTERISTICS SYMBOL

TEST CONDITIONS MIN. TYP. MAX. UNIT

Zero Gate Voltage Drain Current I DSS V DS = 60 V, V GS = 0 V 10

μA

Gate Leakage Current I GSS V GS = ±20 V, V DS = 0 V ±100 nA Gate to Source Cut-off Voltage V GS(off)

V DS = 10 V, I D = 1 mA 2.0 3.0 4.0 V Forward Transfer Admittance

Note

| y fs | V DS = 10 V, I D = 30 A 16 31 S Drain to Source On-state Resistance Note

R DS(on) V GS = 10 V, I D = 42 A 7 10 m Ω Input Capacitance C iss V DS = 10 V, 5300

pF Output Capacitance

C oss V GS = 0 V, 540 pF Reverse Transfer Capacitance C rss f = 1 MHz

330 pF Turn-on Delay Time t d(on) V DD = 30 V, I D = 42 A, 25 ns Rise Time

t r V GS = 10 V,

17

ns

Turn-off Delay Time t d(off)

R G = 0 Ω

66 ns Fall Time

t f 9 ns Total Gate Charge Q G V DD = 48 V, 90 nC Gate to Source Charge Q GS V GS = 10 V, 21 nC Gate to Drain Charge Q GD

I D = 84 A

30 nC Body Diode Forward Voltage Note

V F(S-D) I F = 84 A, V GS = 0 V 1.0 1.5 V Reverse Recovery Time t rr I F = 84 A, V GS = 0 V,

43

ns

Reverse Recovery Charge

Q rr

di/dt = 100 A/μs 62 nC

Note Pulsed

V GS = 20 TEST CIRCUIT 1 AVALANCHE CAPABILITY

L DD

TEST CIRCUIT 2 SWITCHING TIME

Data Sheet D18760EJ2V0DS 3

TYPICAL CHARACTERISTICS (T A = 25°C)

DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA

TOTAL POWER DISSIPATION vs. CASE TEMPERATURE

d T - P

e r c e n t a g e o

f R a t e d P o w e r - %

T C - Case Temperature - °C

P T - T o t a l P o w e r D i s s i p a t i o n - W

T C - Case Temperature - °C

FORWARD BIAS SAFE OPERATING AREA

I D - D r a i n C u r r e n t - A

V DS - Drain to Source Voltage - V

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

r t h (t ) - T r a n s i e n t T h e r m a l R e s i s t a n c e - °C /W

PW - Pulse Width - s

Data Sheet D18760EJ2V0DS

4

DRAIN CURRENT vs.

DRAIN TO SOURCE VOLTAGE

FORWARD TRANSFER CHARACTERISTICS

I D - D r a i n C u r r e n t - A

V DS - Drain to Source Voltage - V

I D - D r a i n C u r r e n t - A

V GS - Gate to Source Voltage - V

GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE

FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT V G S (o f f ) - G a t e t o S o u r c e C u t -o f f V o l t a g e - V

T ch - Channel Temperature - °C

| y f s | - F o r w a r d T r a n s f e r A d m i t t a n c e - S

I D - Drain Current - A

DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

R D S (o n ) - D r a i n t o S o u r c e O n -s t a t e R e s i s t a n c e - m Ω

I D - Drain Current - A

R D S (o n ) - D r a i n t o S o u r c e O n -s t a t e R e s i s t a n c e - m Ω

V GS - Gate to Source Voltage - V

Data Sheet D18760EJ2V0DS 5

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE

CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE

R D S (o n ) - D r a i n t o S o u r c e O n -s t a t e R e s i s t a n c e - m Ω

T ch - Channel Temperature - °C

C i s s , C o s s , C r s s - C a p a c i t a n c e - p F

V DS - Drain to Source Voltage - V

SWITCHING CHARACTERISTICS

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

t d (o n ), t r , t d (o f f ), t f - S w i t c h i n g T i m e - n s

I D - Drain Current - A

V D S - D r a i n t o S o u r c e V o l t a g e - V

Q G - Gate Charge - nC

V G S - G a t e t o S o u r c e V o l t a g e - V

SOURCE TO DRAIN DIODE FORWARD VOLTAGE

REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT

I F - D i o d e F o r w a r d C u r r e n t - A

V F(S-D) - Source to Drain Voltage - V

t r r - R e v e r s e R e c o v e r y T i m e - n s

I F - Diode Forward Current - A

Data Sheet D18760EJ2V0DS

6 PACKAGE DRAWING (Unit: mm)

EQUIVALENT CIRCUIT

Body Diode

Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately

degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.

Data Sheet D18760EJ2V0DS 7

MARKING INFORMATION

Lot code

Pb-free plating marking Abbreviation of part number

RECOMMENDED SOLDERING CONDITIONS

The 2SK4145 should be soldered and mounted under the following recommended conditions.

For soldering methods and conditions other than those recommended below, please contact an NEC Electronics sales representative.

For technical information, see the following website.

Semiconductor Device Mount Manual (https://www.wendangku.net/doc/3a6209955.html,/pkg/en/mount/index.html)

Soldering Method Soldering Conditions

Recommended Condition Symbol

Wave soldering

Maximum temperature (Solder temperature): 260°C or below Time: 10 seconds or less

Maximum chlorine content of rosin flux: 0.2% (wt.) or less

THDWS Partial heating

Maximum temperature (Pin temperature): 350°C or below Time (per side of the device): 3 seconds or less

Maximum chlorine content of rosin flux: 0.2% (wt.) or less

P350 Caution Do not use different soldering methods together (except for partial heating).

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