RD15HVF1

OUTLINE DRAWING

note(3)

:Copper of the ground work is exposed in case of frame separation.

note:

(1)Torelance of no designation means typical value. Dimension in mm.(3)

(2):Dipping area

PINS 1:GATE 2:SOURCE 3:DRAIN

4:FIN(SOURCE)

12

3

4

DESCRIPTION

RD15HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applica -tions.

FEATURES

High power and High Gain:

Pout>15W, Gp>14dB @Vdd=12.5V,f=175MHz Pout>15W, Gp>7dB @Vdd=12.5V,f=520MHz High Efficiency: 60%typ. on VHF Band High Efficiency: 55%typ. on UHF Band

APPLICATION

For output stage of high power amplifiers in VHF/UHF Band mobile radio sets.

RoHS COMPLIANT

RD15HVF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter “G” after the lot marking.

This product include the lead in high melting temperature type solders. How ever,it applicable to the following exceptions of RoHS Directions.

1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)

ABSOLUTE MAXIMUM RATINGS

(Tc=25°C UNLESS OTHERWISE NOTED)

SYMBOL PARAMETER CONDITIONS RATINGS UNIT V DSS Drain to source voltage Vgs=0V 30 V V GSS Gate to source voltage Vds=0V +/-20 V Pch Channel dissipation Tc =

25°C 48 W

Pin Input power Zg =Zl =50? 1.5(Note2)

W ID Drain current - 4 A Tch Channel temperature - 150 °C

Tstg Storage temperature - -40 to +150

°C Rth j-c Thermal resistance junction to case 2.6

°C/W Note 1: Above parameters are guaranteed independently.

Note 2: Over 300MHz use spec is 6W

ELECTRICAL CHARACTERISTICS (Tc=25°C , UNLESS OTHERWISE NOTED)

LIMITS UNIT SYMBOL PARAMETER

CONDITIONS

MIN TYP MAX.

I DSS Zero gate voltage drain current V DS =17V, V GS =

0V - - 100 uA I GSS Gate to source leak current V GS =10V, V DS =0V - - 1 uA V TH Gate threshold Voltage V DS =12V, I DS =

1mA 1.5 2.0 2.5 V Pout1 Output power V DD =12.5V, Pin=0.6W, 15 18 - W

ηD1 Drain efficiency

f=175MHz,Idq=0.5A 55 60 - % Pout2 Output power V DD =12.5V, Pin=3W, 15 18 - W

ηD2 Drain efficiency

f=520MHz,Idq=0.5A 50 55 - % Load VSWR tolerance V DD =15.2V,Po=15W(PinControl)

f=175MHz,Idq=0.5A,Zg=50? Load VSWR=20:1(All Phase)

No destroy - Load VSWR tolerance V DD =15.2V,Po=15W(PinControl)

f=520MHz,Idq=0.5A,Zg=50? Load VSWR=20:1(All Phase)

No destroy - Note : Above parameters , ratings , limits and conditions are subject to change.

TYPICAL CHARACTERISTICS

TYPICAL CHARACTERISTICS

TYPICAL CHARACTERISTICS

TEST CIRCUIT(f=175MHz)

L3:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire

micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm Note:Board material-Teflon substrate

C1:2200pF 10uF in parallel RF-OUT

L1:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire Vgg

Vdd

Dimensions:mm

C2:2200pF*2 in parallel

C3:2200pF,330uF in parallel

L2:5Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire

TEST CIRCUIT(f=520MHz)

L2:2Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire C3:2200pF,330uF in parallel

C2:2200pF*2 in parallel Dimensions:mm

Vdd

Vgg

L1:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire C1:2200pF 10uF in parallel Note:Board material-Teflon substrate

micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm L3:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire

INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS

f=520MHz Zout

f=520MHz Zin

f=175MHz Zout

Zo=50ohm

f=175MHz Zin

Zin , Zout

f Zin Zout

(MHz) (ohm) (ohm) Conditions

Po=15W, Vdd=12.5V,Pin=0.6W 175 2.34-j8.01 3.06+j0.74

Po=15W, Vdd=12.5V,Pin=3.0W 520 5.42+j9.22 6.02+j12.34