IXFN340N07_04中文资料
? 2004 IXYS All rights reserved
Features
?International standard package ?miniBLOC, with Aluminium nitride
isolation
?Low R DS (on) HDMOS TM process
?Rugged polysilicon gate cell structure ?Unclamped Inductive Switching (UIS)rated
?Low package inductance ?Fast intrinsic Rectifier
Applications
?DC-DC converters ?Battery chargers
?Switched-mode and resonant-mode
power supplies ?DC choppers
?Temperature and lighting controls ?Linear current regulators Advantages
?Easy to mount ?Space savings ?High power density
Symbol Test Conditions
Characteristic Values
(T J = 25°C, unless otherwise specified)
min.typ.max.
V DSS V GS = 0 V, I D = 3 mA 70V V GH(th)V DS = V GS , I D = 8 mA 2.0
4.0V I GSS V GS = ±20 V DC , V DS = 0±200
nA I DSS V DS = V DSS T J = 25°C 100μA V GS = 0 V
T J = 125°C
2mA R DS(on)
V GS = 10 V, I D = 100A 4
m Ω
Pulse test, t ≤ 300 μs,duty cycle d ≤ 2 %
Symbol Test Conditions Maximum Ratings
V DSS T J = 25°C to 150°C
70V V DGR T J = 25°C to 150°C; R GS = 1 M Ω70V V GS Continuous ±20V V GSM Transient
±30V I D25T C = 25°C, Chip capability 340A I L(RMS)Terminal current limit
100A I DM T C = 25°C, pulse width limited by T JM 1360A I AR T C = 25°C 200A E AR T C = 25°C 64mJ E AS T C = 25°C
4J dv/dt I S ≤ I DM , di/dt ≤ 100 A/μs, V DD ≤ V DSS ,10V/ns T J ≤ 150°C, R G = 2 ΩP D T C = 25°C
700
W T J -55 ... +150
°C T JM 150
°C T stg -55 ... +150
°C V ISOL 50/60 Hz, RMS t = 1 min 2500V~I ISOL ≤ 1 mA
t = 1 s
3000
V~
M d Mounting torque
1.5/13Nm/lb.in.Terminal connection torque 1.5/13Nm/lb.in.
Weight
30
g
HiPerFET TM
Power MOSFETs Single Die MOSFET
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t rr
DS98547D(05/04)
D
S
G S
S
G
S
D
miniBLOC, SOT-227 B (IXFN) E153432
G = Gate D = Drain
S = Source
Either Source terminal at miniBLOC can be used as Main or Kelvin Source
IXFN 340N07
V DSS =
70V I D25
= 340A R DS(on)
= 4 m Ω
t rr ≤ 200 ns
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
Test Conditions
Characteristic Values
(T J = 25°C, unless otherwise specified)
fs V DS = 10 V; I D = 60A, pulse test
C iss C oss V GS = 0 V, V C rss d(on)Source-Drain Diode Characteristic Values
(T J = 25°C, unless otherwise specified)
Symbol Test Conditions min.typ.max.
I S V GS = 0 V
340A I SM Repetitive;
1360A pulse width limited by T JM
V SD I F = 100A, V GS = 0 V,
1.2
V Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %t rr I F = 50A, -di/dt = 100 A/μs, V R = 50V T J =25°C
100200
ns Q RM 1.4μC I RM
8
A
IXYS MOSFETs and IGBTs are covered by 4,835,5924,881,106 5,017,5085,049,9615,187,117 5,381,0256,162,6656,306,728 B16,534,3436,683,344 one or moreof the following U.S. patents:
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,486,715
6,259,123 B16,404,065 B16,583,505
6,710,405B2
? 2004 IXYS All rights reserved
Fig. 1. Output Characteristics
@ 25 Deg. C
80120160200240D - A m p e r e s
V GS =10V 9V 8V 7V
IXYS reserves the right to change limits, test conditions, and dimensions.
Fig. 7. Input Admittance
100150200
250I D - A m p e r e s
T J = -40°C 25°C
? 2004 IXYS All rights reserved