当前位置：文档库 › MRF5S21130HR3;MRF5S21130HR5;MRF5S21130HSR3;MRF5S21130HSR5;中文规格书,Datasheet资料

MRF5S21130HR3;MRF5S21130HR5;MRF5S21130HSR3;MRF5S21130HSR5;中文规格书,Datasheet资料

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for W-CDMA base station applications at frequencies from 2110

to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-

tions. To be used in Class AB for PCN-PCS/cellular radio and WLL

applications.

?Typical 2-Carrier W-CDMA Performance: V DD = 28 Volts, I DQ = 1200 mA,

P out =28 Watts Avg., Full Frequency Band, Channel Bandwidth =

3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain — 13.5 dB

Efficiency — 26%

IM3 @ 10 MHz Offset — -37 dBc in 3.84 MHz Channel Bandwidth

ACPR @ 5 MHz Offset — -39 dBc in 3.84 MHz Channel Bandwidth

?Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 92 Watts CW

Output Power

Features

?Characterized with Series Equivalent Large-Signal Impedance Parameters

?Internally Matched for Ease of Use

?Qualified Up to a Maximum of 32 V DD Operation

?Integrated ESD Protection

?Lower Thermal Resistance Package

?Low Gold Plating Thickness on Leads, 40μ″ Nominal.

?RoHS Compliant

?In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating Symbol Value Unit Drain-Source Voltage V DSS -0.5, +65Vdc Gate-Source Voltage V GS -0.5, +15Vdc Total Device Dissipation @ T C = 25°C

Derate above 25°C

P D372

2.13

W/°C Storage Temperature Range T stg-65 to +150°C Case Operating Temperature T C150°C Operating Junction Temperature T J200°C CW Operation @ T C = 25°C

Derate above 25°C

CW100

0.54

W/°C Table 2. Thermal Characteristics

Characteristic Symbol Value (1,2)Unit Thermal Resistance, Junction to Case

Case Temperature 80°C, 92 W CW

Case Temperature 76°C, 28 W CW

RθJC

0.44

0.47

°C/W

1.MTTF calculator available at https://www.wendangku.net/doc/3615105034.html,/rf. Select Tools/Software/Application Software/Calculators to access

the MTTF calculators by product.

2.Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to https://www.wendangku.net/doc/3615105034.html,/rf.

Select Documentation/Application Notes - AN1955.

MRF5S21130H

Rev. 3, 5/2006 Freescale Semiconductor

Technical Data

RF Device Data

Freescale Semiconductor

MRF5S21130HR3 MRF5S21130HSR3Table 3. ESD Protection Characteristics

Test Conditions

Class Human Body Model 2 (Minimum)Machine Model M4 (Minimum)Charge Device Model

C7 (Minimum)

Table 4. Electrical Characteristics (T C = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current (V DS = 65 Vdc, V GS = 0 Vdc)

I DSS ——10μAdc Zero Gate Voltage Drain Leakage Current (V DS = 28 Vdc, V GS = 0 Vdc)I DSS ——1μAdc Gate-Source Leakage Current (V GS = 5 Vdc, V DS = 0 Vdc)I GSS

—

μAdc

On Characteristics

Gate Threshold Voltage

(V DS = 10 Vdc, I D = 300 μAdc)V GS(th) 2.5 2.7 3.5Vdc Gate Quiescent Voltage

(V DS = 28 Vdc, I D = 1200 mAdc)V GS(Q)— 3.7—Vdc Drain-Source On-Voltage (V GS = 10 Vdc, I D = 3 Adc)V DS(on)—0.260.3Vdc Forward Transconductance (V DS = 10 Vdc, I D = 3 Adc)g fs

—

7.5

—

Dynamic Characteristics (1)

Reverse Transfer Capacitance

(V DS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V GS = 0 Vdc)

C rss

—

2.6

—

Functional Tests (In Freescale Test Fixture, 50 ohm system) V DD = 28 Vdc, I DQ = 1200 mA, P out = 28 W Avg., f1 = 2112.5 MHz,

f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2-carrier W-CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Channel Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01%Probability on CCDF.Power Gain G ps 1213.5—dB Drain Efficiency

ηD 24

26—%Intermodulation Distortion IM3-37-35dBc Adjacent Channel Power Ratio ACPR —-39-37dBc Input Return Loss

IRL

—-12

-9

1.Part internally matched both on input and output.

https://www.wendangku.net/doc/3615105034.html,/

MRF5S21130HR3 MRF5S21130HSR3

RF Device Data

Freescale Semiconductor

Figure 1. MRF5S21130HR3(SR3) Test Circuit Schematic

Z9, Z100.709″ x 0.083″ Microstrip Z110.415″ x 1.000″ Microstrip Z120.531″ x 0.083″ Microstrip Z13

0.994″ x 0.083″ Microstrip Z14, Z150.070″ x 0.220″ Microstrip Z160.430″ x 0.083″ Microstrip

PCB

Taconic TLX8, 0.030″, εr = 2.55

Z10.500″ x 0.083″ Microstrip Z20.995″ x 0.083″ Microstrip Z30.905″ x 0.083″ Microstrip Z40.159″ x 1.024″ Microstrip Z50.117″ x 1.024″ Microstrip Z6, Z70.749″ x 0.083″ Microstrip Z80.117″ x 1.000″ Microstrip Table 5. MRF5S21130HR3(SR3) Test Circuit Component Designations and Values

Part

Description

Part Number Manufacturer C1, C2, C13, C14, C15, C1610 μF, 35 V Tantalum Capacitors 293D1106X9035D Vishay-Sprague C3, C4, C11, C12

220 nF Chip Capacitors (1812)1812Y224KXA Vishay-Vitramon C5, C6, C7, C9, C10, C18, C19 6.8 pF 100B Chip Capacitors 100B6R8CW ATC C80.1 pF 100B Chip Capacitor 100B0R1BW ATC C170.5 pF 100B Chip Capacitor

100B0R5BW ATC C20220 μF, 63 V Electrolytic Capacitor, Radial 13668221

Philips

R1, R2

1 k W , 1/4 W Chip Resistors

https://www.wendangku.net/doc/3615105034.html,/

RF Device Data

Freescale Semiconductor

MRF5S21130HR3 MRF5S21130HSR3Figure 2. MRF5S21130HR3(SR3) Test Circuit Component Layout

Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product.

https://www.wendangku.net/doc/3615105034.html,/

MRF5S21130HR3 MRF5S21130HSR3

RF Device Data

Freescale Semiconductor

TYPICAL CHARACTERISTICS

G p s , P O W E R G A I N (d B )

14.514

13.513

12.512

11.5100

?60?250.1

TWO?TONE SPACING (MHz)

Figure 6. Intermodulation Distortion Products

versus Tone Spacing I N T E R M O D U L A T I O N D I S T O R T I O N (d B c )

I M D ,1

?30?35?40?45

?50?5533

P in , INPUT POWER (dBm)

Figure 7. Pulse CW Output Power versus

Input Power

3536

https://www.wendangku.net/doc/3615105034.html,/

RF Device Data

Freescale Semiconductor

MRF5S21130HR3 MRF5S21130HSR3TYPICAL CHARACTERISTICS

0355

P out , OUTPUT POWER (WATTS) AVG. (W?CDMA)

Figure 8. 2-Carrier W-CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power

I M 3 (d B c ),A C P R (d B c )10

30252015105ηD , D R A I N E F F I C I E N C Y (%), G p s , P O W E R G A I N (d B )

220

109

100

T J , JUNCTION TEMPERATURE (°C)

Figure 9. MTTF Factor versus Junction Temperature

This above graph displays calculated MTTF in hours x ampere 2drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by I D 2 for MTTF in a particular application.

108

107

106120140160180

200M T T F F A C T O R (H O U R S x A M P S )

2W-CDMA TEST SIGNAL

0.0001

1000

PEAK?TO?AVERAGE (dB)

Figure 10. CCDF W-CDMA 3GPP , Test Model 1, 64 DPCH, 67% Clipping, Single-Carrier Test Signal

P R O B A B I L I T Y (%)

1010.10.010.0012

515

0?5?10?15

?20

?25

Figure 11. 2-Carrier W-CDMA Spectrum

f, FREQUENCY (MHz)

?110?120

?70?80?60?50(d B )

?90?100?40?30https://www.wendangku.net/doc/3615105034.html,/

MRF5S21130HR3 MRF5S21130HSR3

RF Device Data

Freescale Semiconductor

Figure 12. Series Equivalent Source and Load Impedance

f MHz Z source

ΩZ load Ω208021102140 1.51 - j2.971.59 - j2.681.52 - j2.542.87 - j9.493.13 - j9.86

4.05 - j10.90V DD = 28 Vdc, I DQ = 1200 mA, P out = 28 W Avg.Z o = 25 Ω

Z load

f = 2080 MHz

f = 2200 MHz

Z source

f = 2080 MHz

f = 2200 MHz

21702200

1.54 - j3.13

1.62 - j

2.704.80 - j11.755.55 - j11.87

Z source =Test circuit impedance as measured from

gate to ground.Z load

=Test circuit impedance as measured from drain to ground.

source

load

Output Matching Network

https://www.wendangku.net/doc/3615105034.html,/

RF Device Data Freescale Semiconductor

MRF5S21130HR3 MRF5S21130HSR3

NOTES https://www.wendangku.net/doc/3615105034.html,/

MRF5S21130HR3 MRF5S21130HSR3

RF Device Data

Freescale Semiconductor

NOTES

https://www.wendangku.net/doc/3615105034.html,/

RF Device Data Freescale Semiconductor

MRF5S21130HR3 MRF5S21130HSR3

NOTES https://www.wendangku.net/doc/3615105034.html,/

分销商库存信息:

FREESCALE

MRF5S21130HR3MRF5S21130HR5MRF5S21130HSR3 MRF5S21130HSR5