HY1808P
87
G : Lead Free Device
HY1808
P P : TO220-3L YYWW
Date Code
HOOYI HOOYI
HOOYI HOOYI reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Pin Description
Ordering and Marking Information
Features
Applications
?75V/80A,
R DS(ON)=.m ? (typ.) @ V GS =10V ?
Avalanche Rated ?Reliable and Rugged
?
Lead Free and Green Devices Available (RoHS Compliant)
? Power Management for Inverter Systems.
N-Channel MOSFET
G
Note:
lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J -STD-020C for MSL classification at lead-free peak reflow temperature. defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
Package Code
Assembly Material G
YYWW G
D
S
*VD=50V
Absolute Maximum Ratings
Note?G
Electrical Characteristics (T A = 25°C Unless Otherwise Noted)
Electrical Characteristics (Cont.) (T
= 25°C Unless Otherwise Noted)
A Array Note a : Pulse test ; pulse width≤300s, duty cycle≤2%.
Note b : Guaranteed by design, not subject to production testing.
Typical Operating Characteristics
Power Dissipation
P t o t - P o w e r (W )
T j - Junction Temperature (°C)
I D - D r a i n C u r r e n t (A )
Drain Current
T j - Junction Temperature (°C)
Safe Operation Area
V DS - Drain - Source Voltage (V)
I D - D r a i n C u r r e n t (A )
Thermal Transient Impedance
Square Wave Pulse Duration (sec)
N o r m a l i z e d E f f e c t i v e T r a n s i e n t
1E-30.01
0.1
1
2
50100150200
250
300350
0.11
10
100
600
1020
3040506070
8090
5
9
7
V DS - Drain-Source Voltage (V)
I D - Drain Current (A)
V GS - Gate - Source Voltage (V)
R D S (O N ) - O n - R e s i s t a n c e (m ?)
T j - Junction Temperature (°C)
Gate Threshold Voltage
N o r m a l i z e d T h r e s h o l d V l o t a g e
Drain-Source On Resistance 45678910
HY1808P
Drain-Source On Resistance
N o r m a l i z e d O n R e s i s t a n c e
T j - Junction Temperature (°C)
V SD - Source-Drain Voltage (V)
Source-Drain Diode Forward
I S - S o u r c e C u r r e n t (A )
V DS - Drain - Source Voltage (V)C - C a p a c i t a n c e (p F )
Capacitance
Gate Charge
Q G - Gate Charge (nC)
V G S - G a t e -s o u r c e V o l t a g e (V )
Typical Operating Characteristics (Cont.)
0.0
0.20.40.60.8 1.0 1.2 1.4
0.11
10
100
170
1
23456789
10
0.2
0.40.60.81.01.21.41.61.82.0
2.22.4
5
10
15
2025303540
01000
20003000400050006000700080009000
1000011000
HY1808P
Avalanche Test Circuit and Waveforms
Avalanche Test Circuit and Waveforms
HY1808P
Package Information TO-220
HY1808P
Classification Profile
Devices Per Unit
HY1808P
Classification Reflow Profiles
Reliability Test Program