AP40T03GP中文资料

N-CHANNEL ENHANCEMENT MODE Electronics Corp.

POWER MOSFET ▼ Dynamic dv/dt Rating BV DSS 650V ▼ Repetitive Avalanche Rated R DS(ON) 1.2Ω▼ Fast Switching

I D

7A

▼ Simple Drive Requirement ▼ RoHS Compliant

Description

Absolute Maximum Ratings

Symbol Units V DS Drain-Source Voltage V V GS

Gate-Source Voltage

V I D @T C =25℃Continuous Drain Current, V GS @ 10V A I D @T C =100℃Continuous Drain Current, V GS @ 10V A I DM

Pulsed Drain Current

1

A P D @T C =25℃Total Power Dissipation W W/℃E AS Single Pulse Avalanche Energy 2mJ I AR Avalanche Current

A E AR Repetitive Avalanche Energy mJ T STG ℃T J

Operating Junction Temperature Range

℃

Thermal Data

Symbol Value Units Rthj-c Thermal Resistance Junction-case Max. 1.4℃/W Rthj-a

Thermal Resistance Junction-ambient

Max.

62

℃/W

Data & specifications subject to change without notice

7Parameter

200705051-1/4

-55 to 150

Parameter

AP07N70CP-A

140Rating 650±30Pb Free Plating Product

774.4Storage Temperature Range

-55 to 1501889Linear Derating Factor

0.7AP07N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications.Both TO-220type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching,ruggedized design and cost-effectiveness.

The TO-220 package is universally preferred for all commercial-industrial applications. The device is suited for switch mode power supplies ,DC-AC converters and high current high speed switching circuits.

G D S

TO-220(P)

Electrical Characteristics@T j=25o C(unless otherwise specified) Symbol Parameter Test Conditions Min.

Typ.Max.Units

BV DSS Drain-Source Breakdown Voltage V GS=0V, I D=1mA650--V ΔB V DSS/ΔT j Breakdown Voltage Temperature Coefficient Reference to 25℃, I D=1mA-0.6-V/℃R DS(ON)Static Drain-Source On-Resistance V GS=10V, I D=3.5A-- 1.2ΩV GS(th)Gate Threshold Voltage V DS=V GS, I D=250uA2-4V g fs Forward Transconductance V DS=10V, I D=3.5A- 4.5-S I DSS Drain-Source Leakage Current (T

j

=25o C)V DS=600V, V GS=0V--10uA Drain-Source Leakage Current (T j=150o C)V DS=480V, V GS=0V--100uA

I GSS Gate-Source Leakage V

GS

=±30V--±100nA Q g Total Gate Charge3I D=7A-32-nC Q gs Gate-Source Charge V DS=480V-8.6-nC Q gd Gate-Drain ("Miller") Charge V GS=10V-9-nC t d(on)Turn-on Delay Time3V DD=300V-17-ns t r Rise Time I D=7A-15-ns t d(off)Turn-off Delay Time R G=10Ω,V GS=10V-35-ns t f Fall Time R D=43Ω-18-ns C iss Input Capacitance V GS=0V-2075-pF C oss Output Capacitance V DS=25V-120-pF C rss Reverse Transfer Capacitance f=1.0MHz-8-pF Source-Drain Diode

Symbol Parameter Test Conditions Min.Typ.Max.Units I S Continuous Source Current ( Body Diode )V D=V G=0V , V S=1.5V--7A I SM Pulsed Source Current ( Body Diode )1--18A V SD Forward On Voltage3T j=25℃, I S=7A, V GS=0V-- 1.5V

Notes:

1.Pulse width limited by safe operating area.

2.Starting T j=25o C , V DD=50V , L=5mH , R G=25Ω , I AS=7A.

3.Pulse width <300us , duty cycle <2%.

2/4 AP07N70CP-A

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

Fig 3. Normalized BV DSS v.s. Junction

Fig 4. Normalized On-Resistance

Temperature

v.s. Junction Temperature

Fig 5. Forward Characteristic of

Reverse Diode

Junction Temperature

3/4

AP07N70CP-A

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform

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AP07N70CP-A