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IRFS254A中文资料

IRFS254A

BV DSS = 250 V R DS(on) = 0.14?I D = 16 A

2501610.1100±306401694.8900.72- 55 to +150

300

1.3840

----? Avalanche Rugged Technology ? Rugged Gate Oxide Technology ? Lower Input Capacitance ? Improved Gate Charge

? Extended Safe Operating Area

? Lower Leakage Current: 10μA (Max.) @ V DS = 250V ? Low R DS(ON): 0.108? (Typ.)

$GYDQFHG 3RZHU 026)(7

Thermal Resistance

Junction-to-Case Junction-to-Ambient

R θJC R θJA

°C/W

Characteristic Max.Units Symbol Typ.FEATURES

Absolute Maximum Ratings

Drain-to-Source Voltage

Continuous Drain Current (T C =25°C)Continuous Drain Current (T C =100°C)Drain Current-Pulsed (1)Gate-to-Source Voltage

Single Pulsed Avalanche Energy (2)Avalanche Current (1)Repetitive Avalanche Energy (1)Peak Diode Recovery dv/dt (3)Total Power Dissipation (T C =25°C)Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds

Characteristic

Value Units Symbol I DM V GS E AS I AR E AR dv/dt I D P D T J , T STG

T L

A V mJ A mJ V/ns W W/°C

A °C

V DSS V TO-3PF

1.Gate

2. Drain

3. Source

21?1999 Fairchild Semiconductor Corporation

Rev. B

IRFS254A

250--2.0----------0.27----------34515521208640881635.6

----4.0100-100101000.14--3000

4001806060190100114----14.642300------2552.3

161001.5----Notes;

(1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature (2) L=4mH, I AS =16A, V DD =50V, R G =27?, Starting T J =25°C (3) I SD ≤ 25A, di/dt ≤ 300A/μs, V DD ≤ BV DSS , Starting T J =25°C (4) Pulse Test: Pulse Width = 250μs, Duty Cycle ≤ 2%(5) Essentially Independent of Operating Temperature

1 &+$11(/32:(5026)(7

Electrical Characteristics (T C =25°C unless otherwise specified)

Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff.Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Characteristic

Symbol Max.Units Typ.Min.Test Condition Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance

Reverse Transfer Capacitance Turn-On Delay Time Rise Time

Turn-Off Delay Time Fall Time

Total Gate Charge Gate-Source Charge Gate-Drain (Miller ) Charge

g fs C iss C oss C rss t d(on)t r t d(off)t f Q g Q gs Q gd

BV DSS ?BV/?T J V GS(th)

R DS(on)I GSS I DSS V V/°C V nA

μA ??pF ns nC --------------------------V GS =0V,I D =250μA I D =250μA See Fig 7

V DS =5V,I D =250μA V GS =30V V GS =-30V V DS =250V

V DS =200V,T C =125°C V GS =10V,I D =8A (4) V DS =40V,I D =8A

(4)V DD =125V,I D =25A,R G =5.3?

See Fig 13 (4) (5)V DS =200V,V GS =10V,I D =25A

See Fig 6 & Fig 12 (4) (5)

Drain-to-Source Leakage Current V GS =0V,V DS =25V,f =1MHz See Fig 5Source-Drain Diode Ratings and Characteristics

Continuous Source Current Pulsed-Source Current (1)Diode Forward Voltage (4)Reverse Recovery Time Reverse Recovery Charge

I S I SM V SD t rr Q rr

Characteristic

Symbol Max.Units Typ.Min.Test Condition ----------A V ns μC

Integral reverse pn-diode in the MOSFET

T J =25°C,I S =16A,V GS =0V T J =25°C,I F =25A

di F /dt=100A/μs (4)

IRFS254A

10-1

010

@ N o t e s :

1. 250 μs

P u l s e T e s t 2. T C

= 25 o

C V GS Top : 1 5 V 1 0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V

I D , D r a i n C u r r e n t [A ]

V D S , D r a i n -S o u r c e V o l t a g e [V ]24

-1

25 o

150 o

C - 55 o

@ N o t e s :

1. V GS = 0 V

2. V DS

= 40 V 3. 250 μs P u l s e T e s t I D , D r a i n C u r r e n t [A ]

V G S , G a t e -S o u r c e V o l t a g e [V ]

204060801000.00

0.05

0.10

0.15

0.20

0.25

@ N o t e : T J

= 25 o

C V GS

= 20 V V GS

= 10 V R D S (o n ) , [?]

D r a i n -S o u r c e O n -R e s i s t a n c e

I D

, D r a i n C u r r e n t [A ]0.2

0.40.6

0.8

1.0

1.2

1.4

1.6

1.8

10-1

150 o

25 o

@ N o t e s :

1. V GS = 0 V

2. 250 μs

P u l s e T e s t I D R , R e v e r s e D r a i n C u r r e n t [A ]

V S D , S o u r c e -D r a i n V o l t a g e [V ]

01000

2000

3000

4000

C iss = C gs + C gd ( C ds = s h o r t e d )

C oss = C ds + C gd C rss = C gd

@ N o t e s :

1. V GS = 0 V

2. f = 1 M H z

C rss

C oss

C iss

C a p a c i t a n c e [p F ]

V D S , D r a i n -S o u r c e V o l t a g e [V ]

100

V DS

= 200 V V DS = 125 V V DS = 50 V @ N o t e s : I D

= 25.0 A V G S , G a t e -S o u r c e V o l t a g e [V ]

Q G , T o t a l G a t e C h a r g e [n C ]

1 &+$11(/32:(5026)(7

Fig 1. Output Characteristics

Fig 2. Transfer Characteristics

Fig 6. Gate Charge vs. Gate-Source Voltage

Fig 5. Capacitance vs. Drain-Source Voltage

Fig 4. Source-Drain Diode Forward Voltage

Fig 3. On-Resistance vs. Drain Current

IRFS254A

-75

-50

-25

100

125

150

175

0.8

0.9

1.0

1.1

1.2

@ N o t e s :

1. V GS = 0 V

2. I D

= 250 μA B V D S S , (N o r m a l i z e d )

D r a i n -S o u r c e B r e a k d o w n V o l t a g e

T J , J u n c t i o n T e m p e r a t u r e [o C ]-75

-50

-25

100

125

150

175

0.00.51.01.52.02.53.0@ N o t e s : 1. V GS

= 10 V 2. I D

= 12.5 A R D S (o n ) , (N o r m a l i z e d )

D r a i n -S o u r c e O n -R e s i s t a n c e

T J , J u n c t i o n T e m p e r a t u r e [o C ]

5075100125150

I D , D r a i n C u r r e n t [A ]

T c , C a s e T e m p e r a t u r e [o C ]

10-5

10-4

10-3

10-2

10-1

100101

10-2

10-1

100

single pulse

0.20.1

0.01

0.02

0.05D=0.5@ Notes :

1. Z θJC (t)=1.38 o C/W Max.

2. Duty Factor, D=t 1/t 2

3. T JM -T C =P DM *Z θJC (t)Z θ

J C (t ) , T h e r m a l R e s p o n s e

t 1 , Square Wave Pulse Duration [sec]

101

10-1

010

110

10 μs

D C

100 μs 1 m s

10 m s @ N o t e s :

1. T C =

25 o C 2. T J = 150 o

C 3. S i n g l e P u l s e

O p e r a t i o n i n T h i s A r e a

i s L i m i t e d b y R DS(on)

I D , D r a i n C u r r e n t [A ]

V D S , D r a i n -S o u r c e V o l t a g e [V ]

1 &+$11(/

32:(5026)(7

Fig 7. Breakdown Voltage vs. Temperature

Fig 8. On-Resistance vs. Temperature

Fig 11. Thermal Response

Fig 10. Max. Drain Current vs. Case Temperature

Fig 9. Max. Safe Operating Area

P DM

t 1

t 2

IRFS254A

1 &+$11(/32:(5026)(7

Fig 12. Gate Charge Test Circuit & Waveform

Fig 13. Resistive Switching Test Circuit & Waveforms

Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms

E AS =L L I AS 2

----21--------------------BV DSS -- V DD

BV DSS

V in

V out

10%

90%

t d(on)

t r t on

t off

t d(off)

t f

Charge

V GS

10V

Q g

Q gs Q gd

Vary t p to obtain required peak I D

10V

V DD

L L

V DS

I D

R G

t p

DUT

BV DSS

t p

V DD

I AS

V DS (t)I D (t)

Time

V DD

( 0.5 rated V DS )

10V

V out V in

R L

DUT

R G

3mA

V GS

Current Sampling (I G )

Resistor

Current Sampling (I D )

Resistor

DUT

V DS

300nF

50k ?

200nF

12V

Same Type as DUT

Current Regulator

R 1

R 2

IRFS254A

1 &+$11(/32:(5026)(7

Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

V DS +--

I S

Driver V GS

R G

Same Type as DUT

V GS

dv/dt controlled by R G

I S controlled by Duty Factor D

V DD

10V

V GS ( Driver )

I S ( DUT )

V DS ( DUT )

V DD

Body Diode

Forward Voltage Drop

V f

I FM , Body Diode Forward Current

Body Diode Reverse Current

I RM

Body Diode Recovery dv/dt

di/dt

D =Gate Pulse Width Gate Pulse Period

--------------------------

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Preliminary No Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data, and

supplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

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