5SGA30J4502中文资料

V DRM=4500V I TGQM=3000A I TSM=24×103A V T0= 2.2V r T=0.6m?V Dclink=2800V Asymmetric Gate turn-off

Thyristor

5SGA 30J4502

Doc. No. 5SYA1202-03 Jan. 03

?Patented free-floating silicon technology

?Low on-state and switching losses

?Annular gate electrode

?Industry standard housing

?Cosmic radiation withstand rating

Blocking

Maximum rated values 1)

Parameter Symbol Conditions min typ max Unit Repetitive peak off-state

voltage

V DRM V GR≥ 2 V4500V

Repetitive peak reverse

voltage

V RRM17V

Permanent DC voltage for 100 FIT failure rate V Dclink Ambient cosmic radiation at sea level

in open air.

2800V

Characteristic values

Parameter Symbol Conditions min typ max Unit Repetitive peak off-state

current

I DRM V D = V DRM, V GR≥ 2 V60mA

Repetitive peak reverse

current

I RRM V R = V RRM, R GK = ∞ ?20mA

Mechanical data

Maximum rated values 1)

Parameter Symbol Conditions min typ max Unit Mounting force F m364044kN Characteristic values

Parameter Symbol Conditions min typ max Unit Pole-piece diameter D p± 0.1 mm75mm Housing thickness H± 0.5 mm26mm Weight m 1.3kg Surface creepage distance D s Anode to Gate33mm Air strike distance D a Anode to Gate15mm

1) Maximum rated values indicate limits beyond which damage to the device may occur

元器件交易网https://www.wendangku.net/doc/4015029764.html,

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

GTO Data

On-state

Maximum rated values

1)

Parameter

Symbol Conditions min typ max Unit Max. average on-state current

I TAVM

Half sine wave, T C = 85 °C

930A Max. RMS on-state current I TRMS

1460

A

Max. peak non-repetitive surge current I TSM 24×103

A

Limiting load integral I 2t t p = 10 ms, T vj = 125°C, sine wave After Surge: V D = V R = 0 V 2.88×106

A 2s Max. peak non-repetitive surge current I TSM 40×10

3

A Limiting load integral

I 2t

t p = 1 ms, T vj = 125°C, sine wave After Surge: V D = V R = 0 V

800×10

3

A 2s Characteristic values

Parameter Symbol Conditions min

typ

max Unit On-state voltage V T I T = 3000 A, T vj = 125°C 4V Threshold voltage V (T0) 2.2V Slope resistance r T T vj = 125°C

I T = 300...4000 A 0.6m ?Holding current

I H

T vj = 25°C

50

A

Turn-on switching

Maximum rated values

1)

Parameter

Symbol Conditions min typ max Unit Critical rate of rise of on-state current

di T /dt cr f = 200 Hz 400A/μs Critical rate of rise of on-state current di T /dt cr T vj = 125°C,

I T = 3000 A, I GM = 30 A,di G /dt = 20 A/μs

f = 1 Hz

800

A/μs Min. on-time

t on

100μs

Characteristic values

Parameter Symbol Conditions min

typ

max Unit Turn-on delay time t d 3μs Rise time

t r 6μs Turn-on energy per pulse

E on

V D = 0.5 V DRM , T vj = 125 °C I T = 3000 A, di/dt = 200 A/μs,

I GM = 30 A, di G /dt = 20 A/μs, C S = 6μF, R S = 5 ?

3.6

J

Turn-off switching

Maximum rated values

1)

Parameter

Symbol Conditions min typ max Unit Max. controllable turn-off current I TGQM V DM ≤ V DRM , di GQ /dt = 40 A/μs,C S = 6 μF, L S ≤ 0.3 μH

3000

A Min. off-time

t off

80μs

Characteristic values

Parameter Symbol Conditions

min

typ

max Unit Storage time t S 25μs Fall time

t f 3μs Turn-on energy per pulse E off 13J Peak turn-off gate current

I GQM

V D = 0.5 V DRM , T vj = 125 °C V DM ≤ V DRM , di GQ /dt = 40 A/μs,I TGQ = I TGQM ,

R S = 5?, C S = 6 μF, L S = 0.3 μH 900

A

Gate

Maximum rated values

1)

Parameter

Symbol Conditions min typ max Unit Repetetive peak reverse voltage

V GRM 17V Repetetive peak reverse current

I GRM

V GR = V GRM

20

mA

Characteristic values

Parameter Symbol Conditions min typ max Unit Gate trigger voltage V GT 1V Gate trigger current

I GT

T vj = 25°C,

V D = 24 V, R A = 0.1 ?

3

A

Thermal

Maximum rated values

1)

Parameter

Symbol

Conditions min typ max Unit Junction operating temperature T vj -40125°C Storage temperature range

T stg -40

125

°C Characteristic values

Parameter

Symbol Conditions min typ max Unit R th(jc)Double side cooled 12K/kW R th(jc)A Anode side cooled 22K/kW Thermal resistance junction to case

R th(jc)C

Cathode side cooled 27

K/kW R th(ch)Single side cooled 6K/kW Thermal resistance case to heatsink (Double side cooled)

R th(ch)

Double side cooled

3

K/kW

Analytical function for transient thermal

impedance:

)

e

-(1R = (t)Z n

1

i t/-i thJC i

?=τi 123

4

R i (K/kW) 5.400 4.500 1.7000.400τi (s)

1.2000

0.1700

0.0100

0.0010

Fig. 1Transient thermal impedance, junction to

case.

Fig. 2On-state characteristics.

Fig. 3Average on-state power dissipation vs.

average on-state current..

Fig. 4Surge current and fusing integral vs. pulse

width.

Fig. 5Forward blocking voltage vs. gate-cathode

resistance..

Fig. 6Static dv/dt capability: Forward blocking

voltage vs. neg. gate voltage or gate cathode resistance.

Fig. 7Forward gate current vs. forard gate voltage.Fig. 8Gate trigger current vs. junction temperature

Fig. 9Turn-on energy per pulse vs. on-state current

and turn-on voltage.Fig. 10Turn-on energy per pulse vs. on.-state current

and current rise rate

Common Test conditions for figures 9, 10 and 11:di G /dt = 20 A/μs C S = 6 μF R S =

5 ?

Tj

= 125 °C

Definition of Turn-on energy:

)

0.1 I 0, (t G 200

GM T s

D

on I dt I V

E ?==?=

òμCommon Test conditions for figures 12, 13 and 15:

Definition of Turn-off energy:

)

0.9 I 0, t (T 400

TGQ T s

D

off I dt I V

E ?==?=

òμFig. 11Turn-on energy per pulse vs. on-state current

and turn-on voltage.

Fig. 12Turn-off energy per pulse vs. turn-off current

and peak turn-off voltage. Extracted gate charge vs. turn-off current.

Fig. 13Turn-off energy per pulse vs. turn-off current

and snubber capacitance.

Fig. 14Required snubber capacitor vs. max

allowable turn-off current.

Fig. 15Turn-off energy per pulse, storage time and

peak turn-off gate current vs. junction temperature.

Fig. 16Storage time and peak turn-off gate current

vs. neg. gate current rise rate.Fig. 17Storage time and peak turn-off gate current

vs. turn-off current.

Fig. 18General current and voltage waveforms with GTO-specific symbols.

Fig. 19Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise.

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

ABB Switzerland Ltd Doc. No. 5SYA1202-03 Jan. 03

Semiconductors Fabrikstrasse 3

CH-5600 Lenzburg, Switzerland Telephone +41 (0)58 586 1419Fax +41 (0)58 586 1306Reverse avalanche capability

In operation with an antiparallel freewheeling diode, the GTO reverse voltage V R may exceed the rate value V RRM due to stray inductance and diode turn-on voltage spike at high di/dt. The GTO is then driven into reverse avalanche. This condition is not dangerous for the GTO provided avalanche time and current are below 10 μs and 1000 A respectively. However, gate voltage must remain negative during this time. Recommendation : V GR =10… 15 V.