KIA75NF75
1. Features
? R DS(ON)=7mΩ(max)@V GS =10V ? Lead free and green device available ? Low Rds-on to minimize conductive loss ? High avalanche current
2. Applications
? Power supply
? DC-DC converters
3.
Pin configuration
Pin Function 1 Gate 2 Drain 3 Source 4
Drain
原厂直销：155******** 刘先生
QQ ：2880195519
4. Absolute maximum ratings
5. Thermal characteristics
Parameter
Symbol Maximum
Units Drain-source voltage V DSS 80 V Gate-source voltage V GSS
+25 V Continuous drain current T C =25 oC I D
3
80 A T C =100 oC 70 A Pulse drain current T C =25 oC
I DP 4 340 A Avalanche current I AS 5 20 A Avalanche energy
E AS 5
410
mJ
Maximum power dissipation
T C =25 oC P D 240
W T C =100 oC
100 W Junction & storage temperature range T J ,T STG
-55～175
oC
Parameter
Symbol Typical Units Thermal resistance-junction to case R θjc 0.52 oC/W
Thermal resistance-junction to ambient R θja
55
6. Electrical characteristics
(T A=25°C,unless otherwise noted) Parameter Symbol Conditions Min Typ Max Unit Static characteristics
Drain-source breakdown voltage BV DSS V GS=0V,I DS=250μA 80 - - V
Zero gate voltage drain current I DSS V DS=64V,V GS=0V - - 1
μA T J=125 oC - - 100
Gate threshold voltage V GS(th)V DS=V GS, I DS=250μA 2 3 4 V Gate leakage current I GSS V GS=+25V,V DS=0V - - +100 nA Drain-source on-state resistance R DS(on)1V GS=10V,I DS=40A - 7 9 mΩ Diode characteristics
Diode forward voltage V SD1 I SD=40A,V GS=0V - - 1.3 V Diode continuous forward current I S3 - - 80 A
Reverse recovery time t rr
I F=40A,dl/dt=100A/μs - 25 - nS
Reverse recovery charge Q rr- 18.5 - nC Dynamic characteristics 2
Gate resistance R G V GS=0V, V DS=0V,F=1MHz - 1.3 - Ω
Input capacitance C iss
V GS=0V, V DS=25V,
F=1.0MHz - 3110 -
pF
Output capacitance C oss - 445 - Reverse transfer capacitance C rss- 270 -
Turn-on delay time t d(ON)
V DD=37.5V,I D=40A,
V GS=10V,R G=6.8Ω - 20.4 -
nS
Turn-on rise time t r - 63 - Turn-off delay time t d(OFF) 67 - Turn-off fall time t f - 43 - Gate charge characteristics 2
T otal gate charge Q g
V DS=37.5V, V GS=10V,
I D=40A, - 76 -
nC
Gate-source charge Q gs- 9.5 -
Gate-drain charge Q gd- 40 -
Note:1. Pulse test; pulse width ≤300μs, duty cycle ≤2%.
2.Guaranteed by design,not subject to production testing.
3.Package limitation current is 50A. Calculated continuous current based on maximum allowable
junction temperature.
4.Repetitive rating, pulse width limited by max junction temperature.
5.Starting T J=25 oC, L=1mH,I AS=40A.
7.Test circuits and waveforms