SW-489SMB中文资料

Features

?Low Voltage Operation 2.5V

?Low Harmonics > 65 dBc at +34 dBm & 1 GHz ?Low Insertion Loss 0.5 dB at 1 GHz ?High Isolation 18.5 dB at 2 GHz

?Miniature FQFP 12-lead 3x3mm Package ?0.5 micron GaAs pHEMT Process

Description

M/A-COM’s SW-489 is a GaAs PHEMT MMIC single pole three throw (SP3T) high power switch in a low cost miniature FQFP 12-lead 3x3mm thin profile package. The SW-489 is ideally suited for applications where high power, low control voltage, low insertion loss, high isola-tion, small size and low cost are required. Typical appli-cations are for GSM and DCS handset systems that con-nect separate transmit and receive functions to a com-mon antenna, as well as other handset and related appli-cations. This part can be used in all systems operating up to 2.5 GHz requiring high power at low control volt-age.

The SW-489 is fabricated using a 0.5 micron gate length GaAs PHEMT process. The process features full pas-sivation for performance and reliability.

GaAs SP3T 2.5V High Power Switch DC - 2.5 GHz S W -489

PIN No. PIN Name

Description 1 V3 Control 3 2

RF3 RF Port 3 3 GND RF Ground 4 GND RF Ground 5 RF2 RF Port 2 6 V2 Control 2 7 GND RF Ground 8 RF1 RF Port 1 9 V1 Control 1 10 GND RF Ground 11

ANT Antenna Port 12 GND RF Ground 13

GND (paddle)

RF Ground

Functional Schematic

Pin Configuration

Preliminary

Feb 12 2002

Parameter

Absolute Maximum Max Input Power (0.5 - 2.5 GHz,

2.5V Control)

+38 dBm Operating Voltage +8.5 volts Operating Temperature -40 o

C to +85 o

C Storage Temperature

-65 o C to +150 o C

Absolute Maximum Ratings 1

1. Exceeding any one or combination of these limits may cause permanent damage.

Specifications subject to change without notice.

North America: Tel. (800) 366-2266, Fax (800) 618-8883 2

Electrical Specifications: T A = 25°C, Z 0 = 50? 2

Parameter Test Conditions Units Min. Typ. Max. Insertion Loss

DC – 1 GHz 1 – 2 GHz 2 - 2.5 GHz dB dB dB

0.5 0.6 0.8 0.65 0.8 1.0 Isolation

DC – 1 GHz 1 – 2 GHz 2 - 2.5 GHz dB dB dB 23 18 15 25 18.5 16

Return Loss DC – 2.5 GHz dB 20 P1dB Vc = 0V/2.5V

dBm 38 2nd Harmonic 1 GHz, P IN = +34 dBm, Vc = 0V/2.5V dBc 65 3rd Harmonic 1 GHz, P IN = +34 dBm, Vc = 0V/2.5V dBc 65 Trise, Tfall 10% to 90% RF, 90% to 10% RF

μS 1

Ton, Toff 50% control to 90% RF, and 50% control to 10% RF

μS 1 Transients In Band mV 10 Gate Leakage

|Vc| = 2.5V

uA

100

Cross Modulation ANT - CELL 3

ANT - PCS 3

Two Tone +22 dBm, 1 MHz Spacing, 820 MHz,

Two Tone +19 dBm, 1 MHz Spacing, 1950 MHz, dBm dBm

59 57

Cross Modulation ANT - CELL

ANT - PCS

Two Tones +22 dBm @ 820 & 821 MHz,

One Tone –27 dBm @ 865 MHz

Two Tones +17 dBm @ 1950 & 1951 MHz,

One Tone –27 dBm @ 1870 MHz dBm dBm -108 TBD

2.Insertion Loss can be optimized by varying the DC Blocking Capacitor value, ie. 1000 pF for 100 MHz - 500 MHz, 100 pF for 0.5 GHz - 2.5 GHz. V1 V2 V3 ANT– RF1

ANT - RF2

ANT - RF3

+2.5 to +5V 0 + 0.2V 0 + 0.2V On Off Off 0 + 0.2V +2.5 to +5V 0 + 0.2V Off On Off 0 + 0.2V

0 + 0.2V

+2.5 to +5V

Off

Off

On

Truth Table 4

4.External DC blocking capacitors are required on all RF ports

3.

IP3 slope versus input power is approximately 1.5:1.

Harmonic Rejection vs. Frequency,

Specifications subject to change without notice.

North America: Tel. (800) 366-2266, Fax (800) 618-8883 FQFP 12-lead 3x3 mm

4

Handling Procedures

The following precautions should be observed to avoid

damage:

Static Sensitivity

Gallium Arsenide Integrated Circuits are ESD sensitive

and can be damaged by static electricity. Proper ESD

techniques should be used when handling these devices.

Ordering Information

Part Number Package

SW-489 FQFP-N 12-lead Plastic Package

SW-489TR 1000 piece reel

SW-489SMB Sample Test Board

5 Specifications subject to change without notice.

North America: Tel. (800) 366-2266, Fax (800) 618-8883