2STF1525;中文规格书,Datasheet资料
November 2009Doc ID 15794 Rev 21/7
2STF1525
Low voltage high performance NPN power transistor
Features
■Very low collector-emitter saturation voltage ■High current gain characteristic ■
Fast switching speed
Applications
■Emergency lighting ■LED drive
■Motherboard and hard disk drive ■Mobile equipment
■
DC-DC converter, voltage regulation
Description
The device is a NPN transistor manufactured using new “PB-HCD” (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
Table 1.
Device summary
Order codes Marking Package Packaging 2STF1525
1525
SOT -89
T ape and reel
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Electrical ratings 2STF1525
2/7 Doc ID 15794 Rev 2
1 Electrical ratings
Table 2.
Absolute maximum ratings
Symbol Parameter
Value Unit V CEX Collector-emitter voltage (V BE = - 1.5 V)95V V CEO Collector-emitter voltage (I B = 0)25V V EBO Emitter-base voltage (I C = 0)5V I C Collector current
5A I CM Collector peak current (t P < 5 ms)10A
I B Base current
1
A
P TOT Total dissipation at T amb = 25 °C 1.4W
T STG Storage temperature
-65 to 150°C
T J
Max. operating junction temperature
150
°C
Table 3.
Thermal data
Symbol Parameter
Value Unit R thJA (1)
1.Device mounted on PCB area of 1 cm 2
Thermal resistance junction-ambient __max
89
°C/W
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2STF1525Electrical characteristics
Doc ID 15794 Rev 23/7
2 Electrical characteristics
T case = 25 °C unless otherwise specified.Table 4.
Electrical characteristics
Symbol Parameter
Test conditions Min.
Typ.
Max.Unit I CBO Collector cut-off current
(I E = 0)
V CB = 50 V 0.1μA I EBO
Emitter cut-off current (I C = 0)
V EB = 4 V
0.1
μA
V (BR)CEX Collector-emitter breakdown voltage (V BE = -1.5 V)I C = 1 mA
95
V
V (BR)CEO (1)
1.Pulse test: pulse duration ≤ 300 μs, duty cycle ≤ 2 %
Collector-emitter breakdown voltage (I B = 0)
I C = 10 mA
25
V
V (BR)EBO
Emitter-base breakdown
voltage (I C = 0)I E = 100 μA
5
V
h FE
(1)
DC current gain
I C = 0.5 A V CE = 2 V
I C = 3 A V CE = 2 V I C = 5 A V CE = 5 V 150100
150500
V CE(sat) (1)Collector-emitter saturation voltage
I C = 3 A I B = 300 mA I C = 3.5 A I B = 40 mA 220
500mV mV V BE(sat) (1)
Base-emitter saturation voltage
I C = 3 A I B = 300 mA
1.2
V C CBO
Collector-base
capacitance (I E = 0)V CB = 10 V , f = 1 MHz 20pF f T T ransition frequency V CE = 10 V I C = 50 mA 120MHz t on t off
Resistive load T urn-on time T urn-off time
I C = 1.5 A V CC = 10 V I B1 = -I B2 = 150 mA
60450
ns ns
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Package mechanical data 2STF1525
4/7 Doc ID 15794 Rev 2
3 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK ? packages, depending on their level of environmental compliance. ECOPACK ? specifications, grade definitions and product status are available at: https://www.wendangku.net/doc/515104694.html, . ECOPACK ? is an ST trademark.
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2STF1525Package mechanical data
Doc ID 15794 Rev 25/7
O b s o l
Revision history 2STF1525
6/7 Doc ID 15794 Rev 2
4 Revision history
Table 5.
Document revision history
Date Revision
Changes
04-Jun-20091Initial release.
12-Nov-2009
2
Document status promoted from preliminary data to datasheet.
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2STF1525
Doc ID 15794 Rev 27/7
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2STF1525