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DMV1500H中文资料

DMV1500H中文资料
DMV1500H中文资料

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Table 1: Main Product Characteristics

DAMPER MODUL.I F(AV) 6 A 3 A V RRM 1500 V 600 V t rr (max)125 ns 50 ns V F (max)

1.7 V

1.4 V

DMV1500H

DAMPER + MODULATION DIODE FOR VIDEO

September 2004REV. 1FEATURES AND BENEFITS

■Full kit in one package

■High breakdown voltage capability ■Very fast recovery diode

■Specified turn on switching characteristics ■Low static and peak forward voltage drop for low dissipation ■

Insulated version:

Insulated voltage = 2000 V RMS Capacitance = 7 pF

■Planar technology allowing high quality and best electrical characteristics

Outstanding performance of well proven DTV as damper and new faster Turbo 2 600V technology as modulation

DESCRIPTION

High voltage semiconductor especially designed for horizontal deflection stage in standard and high resolution video display with E/W correction.

The insulated TO-220FPAB package includes both the DAMPER diode and the MODULATION diode, thanks to a dedicated design.

Assembled on automated line, it offers very low dispersion values on insulating and thermal performanes.Order Codes

Part Number Marking DMV1500HFD DMV1500H DMV1500HFD5

DMV1500H

DMV1500H

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Table 3: Absolute Maximum Ratings Table 4: Thermal Resistance

Table 5: Static Electrical Characteristics

Pulse test:

* tp = 5 ms, δ < 2%

** tp = 380 μs, δ < 2%

To evaluate the maximum conduction losses of the DAMPER and MODULATION diodes use the following equations :DAMPER: P = 1.35 x I F(AV) + 0.59 x I F 2

(RMS)MODULATION: P = 1.12 x I F(AV) + 0.092 x I F 2

(RMS)

Table 6: Recovery Characteristics

Symbol Parameter

Value

Unit Damper Modul.V RRM Repetitive peak reverse voltage 1500600V I FSM Surge non repetitive forward current tp = 10ms sinusoidal

80

35

A T stg Storage temperature range

-40 to +150

°C T j

Maximum operating junction temperature

150

°C

Symbol Parameter

Value Unit R th(j-c)

Junction to case thermal resistance

3.6

°C/W

Symbol

Parameter

Test conditions Value

Unit

T j = 25°C T j = 125°C Typ.

Max.Typ.Max.I R *Reverse leakage current Damper V R = 1500 V 1001001000μA

Modul.V R = 600 V 20350V F **

Forward voltage drop

Damper I F = 6 A 1.5 2.3 1.25 1.7V

Modul.

I F = 3 A

1.8

1.1

1.4

Symbol

Parameter

Test conditions Value

Unit

Damper Modul.Typ.

Max.

Typ.Max.t rr Reverse recovery time

I F = 100mA I R =100mA I RR = 10mA

T j = 25°C

625

110

350

ns

I F = 1A

dI F /dt = -50 A/μs V R =30V

T j = 25°C 95

125

35

50

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Table 7: Turn-On Switching Characteristics Symbol

Parameter

Test conditions Value Unit

Typ.

Max.

t fr

Forward recovery time

Damper

I F = 6 A

dI F /dt = 80 A/μs V FR = 3 V T j = 100°C

350

ns

Modul.

I F = 3 A

dI F /dt = 80 A/μs V FR = 2 V T j = 100°C

240V FP

Peak forward voltage

Damper

I F = 6 A

dI F /dt = 80 A/μs T j = 100°C 1825

V

Modul.

I F = 3 A

dI F /dt = 80 A/μs

T j = 100°C

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Figure 1: Power dissipation versus peak forward current (triangular waveform, δ=0.45)

Figure 2: Average forward current versus ambient temperature

Figure 3: Forward voltage drop versus forward current (damper diode)

Figure 4: Forward voltage drop versus forward current (modulation diode)

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Figure 5: Relative variation of thermal impedance junction to case versus pulse duration

Figure 6: Non repetitive peak forward current versus overload duration (damper diode)

Figure 7: Non repetitive peak forward current versus overload duration (modulation diode)

Figure 8: Reverse recovery charges versus dI F /dt (damper diode)

Figure 9: Reverse recovery charges versus dI F /dt (modulation diode)

Figure 10: Peak reverse recovery current versus dI F /dt (damper diode)

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Figure 11: Peak reverse recovery current versus dI F /dt (modulation diode)

Figure 12: Transient peak forward voltage versus dI F /dt (damper diode)

Figure 13: Transient peak forward voltage versus dI F /dt (modulation diode)

Figure 14: Forward recovery time versus dI F /dt (damper diode)

Figure 15: Forward recovery time versus dI F /dt (modulation diode)

Figure 16: Relative variation of dynamic parameters versus junction temperature

DMV1500H

Figure 17: Junction capacitance versus reverse voltage applied (typical values)

Figure 18: TO-220FPAB Package Mechanical Data

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Figure 19: TO-220FPAB F5 Bending (option) Package Mechanical Data

Table 8: Ordering Information

Part Number Marking Package Weight Base qty

Delivery mode DMV1500HFD DMV1500H TO-220FPAB 2.4 g 50Tube DMV1500HFD5

DMV1500H

TO-220FPAB F5

2.4 g

45

Tube

Table 9: Revision History

Date Revision

Description of Changes

07-Sep-2004

1

First issue

DMV1500H

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

The ST logo is a registered trademark of STMicroelectronics.

All other names are the property of their respective owners

? 2004 STMicroelectronics - All rights reserved

STMicroelectronics group of companies

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