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SI2309CDS中文资料

Vishay Siliconix

Si2309CDS

P-Channel 60-V (D-S) MOSFET

FEATURES

?Halogen-free Option Available ?TrenchFET ? Power MOSFET

APPLICATIONS

?Load Switch

PRODUCT SUMMARY

V DS (V)R DS(on) (Ω)I D (A)d Q g (Typ.)- 60

0.345 at V GS = - 10 V - 1.6 2.7 nC

0.450 at V GS = - 4.5 V

- 1.4

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. t = 5 s.

c. Maximum under Steady State conditions is 166 °C/W.

d. When T C = 25 °C.ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted

Parameter Symbol Limit nit

Drain-Source Voltage V DS - 60V

Gate-Source Voltage

V GS

± 20

Continuous Drain Current (T J = 150 °C)a, b

T C = 25 °C

I D - 1.6A T C = 70 °C - 1.3T A = 25 °C - 1.2a, b T A = 70 °C

- 1.0a, b

Pulsed Drain Current (10 μs Pulse Width)I DM - 8Single Pulse Avalanche Current L = 0.1 mH I AS - 5Continuous Source-Drain Diode Current

T C = 25 °C I S - 1.4T A = 25 °C - 0.9a, b Maximum Power Dissipation

T C = 25 °C

P D 1.7W T C = 70 °C 1.1T A = 25 °C 1.0a, b T A = 70 °C

0.67a, b Operating Junction and Storage T emperature Range T J , T stg - 55 to 150

°C Soldering Recommendations (Peak Temperature)c

260

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum U

nit

Maximum Junction-to-Ambient a, c t ≤ 5 s R thJA 92120°C/W

Maximum Junction-to-Foot (Drain)

Steady State

R thJF

Vishay Siliconix

Si2309CDS

Notes:

a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

SPECIFICATIONS T J = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min.Typ.Max.

U nit

Static

Drain-Source Breakdown Voltage V DS V GS = 0 V , I D = - 250 μA

- 60

V V DS Temperature Coefficient ΔV DS /T J I D = - 250 μA - 65mV/°C V GS(th) Temperature Coefficient ΔV GS(th)/T J 4.5

Gate-Source Threshold Voltage V GS(th) V DS = V GS , I D = - 250 μA - 1- 3V

Gate-Source Leakage

I GSS V DS = 0 V , V GS = ± 20 V - 100nA

Zero Gate Voltage Drain Current I DSS V DS = - 60 V , V GS = 0 V - 1μA V DS = - 60 V , V GS = 0 V , T J = 55 °C

- 10

On-State Drain Current a

I D(on) V DS ≤ 5 V , V GS = - 10 V - 6

A Drain-Source On-State Resistance a R DS(on) V GS = - 10 V , I D = - 1.25 A 0.2850.345ΩV GS = - 4.5 V , I D = - 1.0 A 0.3600.450

Forward T ransconductance a g fs

V DS = - 10 V, I D = - 1.0 A

2.8

Dynamic b

Input Capacitance C iss V DS = - 30 V , V GS = 0 V, f = 1 MHz

210pF

Output Capacitance

C oss 28Reverse Transfer Capacitance C rss 20Total Gate Charge Q g V DS = - 30 V, V GS = - 4.5 V , I

D = - 1.25 A 2.7 4.1

nC Gate-Source Charge Q gs 0.8Gate-Drain Charge Q gd 1.2Gate Resistance R g f = 1 MHz

7Ω

Turn-On Delay Time t d(on) V DD = - 30 V, R L = 30 Ω I D ? - 1 A, V GEN = - 4.5 V , R g = 1 Ω

4060ns

Rise Time

t r 35

Turn-Off Delay Time t d(off) 1525

Fall Time

t f 1020

Turn-On Delay Time t d(on) V DD = - 30 V, R L = 30 Ω

I D ? - 1 A, V GEN = - 10 V, R g = 1 Ω510Rise Time

t r 1020Turn-Off Delay Time t d(off) 1525Fall Time

t f

Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I S T C = 25 °C

- 1.4A Pulse Diode Forward Current I SM - 8Body Diode Voltage

V SD I S = - 0.75 A, V GS = 0 V

- 0.8- 1.2V Body Diode Reverse Recovery Time t rr I F = - 1.25 A, dI/dt = 100 A/μs, T J = 25 °C

3060ns Body Diode Reverse Recovery Charge Q rr 3360

nC Reverse Recovery Fall Time t a 18ns

Reverse Recovery Rise Time

t b

Gate Charge

On-Resistance vs. Junction Temperature

Source-Drain Diode Forward Voltage

Threshold Voltage

Single Pulse Power, Junction-to-Ambient

Vishay Siliconix

Si2309CDS

TYPICAL CHARACTERISTICS 25°C, unless otherwise noted

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see https://www.wendangku.net/doc/567918319.html,/ppg?68980.

Normalized Thermal Transient Impedance, Junction-to-Ambient

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Vishay

All product specifications and data are subject to change without notice.

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