RU190N08-美亚科技
RU190N08
N-Channel Advanced HV Power MOSFET
TO-220 TO-220F
TO-263 TO-247
Electrical Characteristics (T A =25°C Unless Otherwise Noted)
RU190N08
Symbol Parameter Test Condition Min.Typ. Max.
Unit
Static Characteristics BV DSS Drain-Source Breakdown Voltage V GS =0V, I DS =-250μA
80 V
V DS = 60V, V GS =
0V 1
I DSS
Zero Gate Voltage Drain Current
T J =
85°C 30 μA
V GS(th) Gate Threshold Voltage V DS =V GS , I DS =-250μA
2
3
4
V
I GSS Gate Leakage Current
V GS =±25V, V DS =0V ±100 nA R DS(ON) c
Drain-Source On-state Resistance
V GS = 10V, I DS =40A
3.9
4.8 m Ω
Notes: c 、 Pulse test ; Pulse width ≤300μs, duty cycle ≤2%.
d 、Guaranteed by design, not subject to production testing.
Diode Characteristics
V SD c Diode Forward Voltage
I SD =40 A, V GS =0V 0.8 1.3 V t rr Reverse Recovery Time
68
ns
q rr
Reverse Recovery Charge
I SD =40A, dl SD /dt=100A/μs
130 nC
Dynamic Characteristics d
R G Gate Resistance V GS =0V,V DS =0V,F=1MHz 1.0 Ω
C iss Input Capacitance 6800 C oss Output Capacitance
1100
C rss Reverse Transfer Capacitance V GS =0V, V DS = 30V,
Frequency=1.0MHz
490
pF
t d(ON)
Turn-on Delay Time
38 70 t r Turn-on Rise Time 22 41 t d(OFF)
Turn-off Delay Time
120 210 t f Turn-off Fall Time V DD =35V, R L =35Ω,
I DS = 1A, V GEN = 10V, R G =6Ω
75 140
ns
Gate Charge Characteristics d
Q g Total Gate Charge 155 220 Q gs Gate-Source Charge 45 Q gd Gate-Drain Charge
V DS =30V, V GS = 10V,
I DS =40A
48
nC
Typical Characteristics
Power Dissipation
Drain Current
P t o t - P o w e r (W )
I D - D r
a i n C u r r e n t (A )
Tj - Junction Temperature (°C)
T j - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
I D - D r
a i n C u r r e n t (A )
N o r m a l i z e d E f f
e c t i v e T r a n s i e n t
V DS - Drain-Source Voltage (V)
Square Wave Pulse Duration (sec)
Typical Characteristics
Output Characteristics
Drain-Source On Resistance
I D - D
r a i n C u r r e n t (A )
R D S (O N ) - O n
R e s i s t a n c e (m ?)
V DS - Drain-Source Voltage (V)
I D - Drain Current (A)
Drain-Source On Resistance
Gate Threshold Voltage
R D S (O N ) - O n -
R e s i s t a n c e (m W )
N o r m a l i z e d T h
r e s h o l d V l o t a g e
VGS - Gate - Source Voltage (V)
Tj - Junction Temperature (°C)
Typical Characteristics
Drain-Source On Resistance
Source-Drain Diode Forward
N o r m a l i z e d O n R e s i s t a n c e
I S - S o u
r c e C u r r e n t (A )
T j - Junction Temperature (°C)
V SD - Source-Drain Voltage (V)
Capacitance
Gate Charge
C -
C a p a c i t a n c e (p F )
V G S - G a t e -S o u
r c e V o l t a g e (V )
V DS - Drain-Source Voltage (V)
Q G - Gate Charge (nC)
R ON @T=25oC:3.9m ?
Avalanche Test Circuit and Waveforms
Switching Time Test Circuit and Waveforms
Ordering and Marking Information
Package Information
TO-220-3L
TO-220F-3L
、
MILLIMETERS
INCHES SYMBOL
MIN. MAX. MIN.MAX.
A 4.420 4.720 1.174 0.186
A1 2.520 2.820 0.099 0.111 b 0.710 0.910 0.028 0.036 b1 1.170 1.370 0.046 0.054 c 0.360 0.460 0.014 0.018 c1 1.170 1.370 0.046 0.054 D 9.950 10.250 0.392 0.404 E 8.990 9.290 0.354 0.366 E1 12.550 12.850 0.494 0.506 e 2.540TYP 0.100TYP e1 4.980 5.180 0.196 0.204 F 2.590 2.890 0.102 0.114 L 13.080 13.480 0.515 0.531 L1 2.470 2.870 0.097 0.113 ? 3.790 3.890 0.149 0.153
Package Information
TO-263-3L
TO-247-3L
MILLIMETERS INCHES SYMBOL
MIN.
MAX.
MIN.
MAX.
A 4.42 4.72 0.174 0.186
B 1.22 1.32 0.048 0.052
b
0.076 0.086 0.030 0.034
b1 1.22 1.32 0.048 0.052
b2 0.33 0.43 0.013 0.017 C 1.22 1.32 0.048 0.052
D
9.95 10.25 0.392 0.404
E 8.99 9.29 0.354 0.366
e1 2.44 2.64 0.096 0.104 e2 4.98 5.18 0.196 0.204
L1
15.19 15.79 0.598 0.622
L2 1.94 2.19 0.076 0.086
Customer Service
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