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ST3403中文资料

ST3403中文资料
ST3403中文资料

-3.5A

DESCRIPTION

The ST3403 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outine surface mount package.

PIN CONFIGURATION SOT-23-3L

1.Gate

2.Source

3.Drain

Y: Year Code A: Process Code

Page 1

FEATURE

-30V/-2.8A, R DS(ON) = 105m-ohm

@VGS = -10V

-30V/-2.5A, R DS(ON) = 115m-ohm

@VGS = -4.5V

-30V/-1.5A, R DS(ON) = 155m-ohm

@VGS = -2.5V

R DS(ON) =255m-ohm @VGS = -1.8V

Super high density cell design for

extremely low R DS(ON)

Exceptional on-resistance and

maximum

DC current capability

SOT-23-3L package design

-3.5A

ABSOLUTE MAXIMUM RATINGS (Ta = 25J Unless otherwise noted )

Parameter Symbol Typical Unit Drain-Source Voltage V DSS -30 V Gate-Source Voltage

V GSS +/-12

V Continuous Drain Current (TJ=150J ) T A =25¢J

T A =70J I D

-3.5 -2.8

A Pulsed Drain Current

I DM -20 A Continuous Source Current (Diode Conduction) I S -1.4 A Power Dissipation

T A =25¢J T A =70J

P D 1.25

0.81

W Operation Junction Temperature T J 150 J Storgae Temperature Range

T STG -55/150 J Thermal Resistance-Junction to Ambient

R c

JA 105

J /W

Page 2

-3.5A

ELECTRICAL CHARACTERISTICS ( Ta = 25J Unless otherwise noted )

Parameter Symbol Condition Min Typ Max

Unit Static

Drain-Source Breakdown Voltage V (BR)DSS V GS =0V,I D =-250uA -30

V

Gate Threshold Voltage V GS(th) V DS =V GS ,I D =-250uA -0.4 -1.0V

Gate Leakage Current

I GSS V DS =0V,V GS =12V

100nA

V DS =-24V,V GS =0V -1

Zero Gate Voltage Drain Current

I DSS V DS =-24V,V GS =0V T J =85J

-5 uA

On-State Drain Current I D(on) V DS -5V,V GS =-4.5V

-4 A

Drain-source On-Resistance

R DS(on)

V GS =-10V,I D =-2.8A V GS =-4.5V,I D =-2.5A V GS =-2.5V,I D =-1.5A V GS =-1.8V,I D =-1.0A 0.09 0.1000.1400.2000.1050.1150.1550.255 Forward Transconductance g fs

V DS =-10V,I D =-2.8A 4 S

Diode Forward Voltage V SD

I S =-1.2A,V GS =0V -0.8 -1.2V

Dynamic

Total Gate Charge Qg 5.8 Gate-Source Charge Qgs 0.8

Gate-Drain Charge Qgd V DS =-15V,V GS =-4.5V

I D -2.0A 1.5

nC Input Capacitance Ciss 380

Output Capacitance

Coss 55

Reverse Transfer Capacitance Crss

V DS =-15V,V GS =0V

F=1MHz 40

pF 6

Turn-On Time

t d(on)

t r 3.9 40 Turn-Off Time

t d(off) t f

V DD =-15V,R L =15V GEN =-10V,R G =3I D -1.0A

15

nS

Page 3

-3.5A

SOT-23-3L PACKAGE OUTLINE

Page 4

-3.5A

TYPICAL CHARACTERISTICS

-3.5A

TYPICAL CHARACTERISTICS

N Channel Enchancement Mode MOSFET ST3403 -3.5A

TYPICAL CHARACTERISTICS

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