-3.5A
DESCRIPTION
The ST3403 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outine surface mount package.
PIN CONFIGURATION SOT-23-3L
1.Gate
2.Source
3.Drain
Y: Year Code A: Process Code
Page 1
FEATURE
-30V/-2.8A, R DS(ON) = 105m-ohm
@VGS = -10V
-30V/-2.5A, R DS(ON) = 115m-ohm
@VGS = -4.5V
-30V/-1.5A, R DS(ON) = 155m-ohm
@VGS = -2.5V
R DS(ON) =255m-ohm @VGS = -1.8V
Super high density cell design for
extremely low R DS(ON)
Exceptional on-resistance and
maximum
DC current capability
SOT-23-3L package design
-3.5A
ABSOLUTE MAXIMUM RATINGS (Ta = 25J Unless otherwise noted )
Parameter Symbol Typical Unit Drain-Source Voltage V DSS -30 V Gate-Source Voltage
V GSS +/-12
V Continuous Drain Current (TJ=150J ) T A =25¢J
T A =70J I D
-3.5 -2.8
A Pulsed Drain Current
I DM -20 A Continuous Source Current (Diode Conduction) I S -1.4 A Power Dissipation
T A =25¢J T A =70J
P D 1.25
0.81
W Operation Junction Temperature T J 150 J Storgae Temperature Range
T STG -55/150 J Thermal Resistance-Junction to Ambient
R c
JA 105
J /W
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-3.5A
ELECTRICAL CHARACTERISTICS ( Ta = 25J Unless otherwise noted )
Parameter Symbol Condition Min Typ Max
Unit Static
Drain-Source Breakdown Voltage V (BR)DSS V GS =0V,I D =-250uA -30
V
Gate Threshold Voltage V GS(th) V DS =V GS ,I D =-250uA -0.4 -1.0V
Gate Leakage Current
I GSS V DS =0V,V GS =12V
100nA
V DS =-24V,V GS =0V -1
Zero Gate Voltage Drain Current
I DSS V DS =-24V,V GS =0V T J =85J
-5 uA
On-State Drain Current I D(on) V DS -5V,V GS =-4.5V
-4 A
Drain-source On-Resistance
R DS(on)
V GS =-10V,I D =-2.8A V GS =-4.5V,I D =-2.5A V GS =-2.5V,I D =-1.5A V GS =-1.8V,I D =-1.0A 0.09 0.1000.1400.2000.1050.1150.1550.255 Forward Transconductance g fs
V DS =-10V,I D =-2.8A 4 S
Diode Forward Voltage V SD
I S =-1.2A,V GS =0V -0.8 -1.2V
Dynamic
Total Gate Charge Qg 5.8 Gate-Source Charge Qgs 0.8
Gate-Drain Charge Qgd V DS =-15V,V GS =-4.5V
I D -2.0A 1.5
nC Input Capacitance Ciss 380
Output Capacitance
Coss 55
Reverse Transfer Capacitance Crss
V DS =-15V,V GS =0V
F=1MHz 40
pF 6
Turn-On Time
t d(on)
t r 3.9 40 Turn-Off Time
t d(off) t f
V DD =-15V,R L =15V GEN =-10V,R G =3I D -1.0A
15
nS
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-3.5A
SOT-23-3L PACKAGE OUTLINE
Page 4
-3.5A
TYPICAL CHARACTERISTICS
-3.5A
TYPICAL CHARACTERISTICS
N Channel Enchancement Mode MOSFET ST3403 -3.5A
TYPICAL CHARACTERISTICS