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ZXTD09N50DE6中文资料

ZXTD09N50DE6E6

ISSUE 2 - JUNE 2001

SuperSOT

DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR

SUMMARY

V CEO =50V; R SAT = 160m ;I C = 1A

DESCRIPTION

A dual NPN low saturation transistor combination contained in a single 6lead SOT23 package. Each transistor is the equivalent to the ZUMT619 device.FEATURES ?Low Equivalent On Resistance ?Low Saturation Voltage

?I C =1A Continuous Collector Current ?SOT23-6 package

APPLICATIONS

?LCD Backlighting inverter circuits ?Boost functions in DC-DC converters

ORDERING INFORMATION DEVICE

REEL SIZE (inches)

TAPE WIDTH (mm)

QUANTITY PER REEL ZXTD09N50DE6TA 78mm embossed 3000units ZXTD09N50DE6TC

8mm embossed

10000units

DEVICE MARKING D619

Top View

SOT23-6

E2B1C2

E1C1

ISSUE 2 - JUNE 2001

ZXTD09N50DE6

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL LIMIT UNIT Collector-Base Voltage V CBO 50V Collector-Emitter Voltage V CEO 50V Emitter-Base Voltage V EBO 5V Peak Pulse Current

I CM 2A Continuous Collector Current I C 1.0A Base Current

I B 200mA Power Dissipation at TA=25°C (a)(d)Linear Derating Factor

P D 0.907.2W mW/°C Power Dissipation at TA=25°C (a)(e)Linear Derating Factor

P D 1.18.8W mW/°C Power Dissipation at TA=25°C (b)(d)Linear Derating Factor

P D 1.713.6W mW/°C Operating and Storage Temperature Range

T j :T stg

-55 to +150

°C

THERMAL RESISTANCE

PARAMETER

SYMBOL VALUE UNIT Junction to Ambient (a)(d)R θJA 139°C/W Junction to Ambient (b)(d)R θJA 73°C/W Junction to Ambient (a)(e)

R θJA

113

°C/W

NOTES

(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,in still air conditions

(b) For a device surface mounted on FR4 PCB measured at t р5 secs.

(d) For device with one active die.

(e) For device with two active die running at equal power.

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ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated). PARAMETER SYMBOL MIN.TYP.MAX.UNIT CONDITIONS.

Collector-Base

Breakdown Voltage

V(BR)CBO50V I C=100μA

Collector-Emitter

Breakdown Voltage

V(BR)CEO50V I C=10mA*

Emitter-Base Breakdown

Voltage

V(BR)EBO5V I E=100μA Collector Cut-Off Current I CBO10nA V CB=40V Emitter Cut-Off Current I EBO10nA V EB=4V

Collector Emitter Cut-Off Current I CES10nA V

CES=40V

Collector-Emitter Saturation Voltage V CE(sat)24

120

160

200

270

I C=100mA,I B=10mA*

I C=250mA,I B=10mA*

I C=500mA,I B=10mA*

I C=1A,I B=50mA*

Base-Emitter

Saturation Voltage

V BE(sat)9401100mV I C=1A,I B=50mA*

Base-Emitter Turn-On Voltage V BE(on)8501100mV I

=1A,V CE=2V*

Static Forward Current Transfer

Ratio h FE200

300

200

420

450

350

130

I C=10mA,V CE=2V*

I C=100mA,V CE=2V*

I C=500mA,V CE=2V*

I C=1A,V CE=2V*

I C=1.5A,V CE=2V*

Transition Frequency f T215MHz I C=50mA,V CE=10V

f=100MHz

Output Capacitance C obo10pF V CB=10V,f=1MHz Turn-On Time t(on)150ns V CC=10V,I C=1A

I B1=I B2=100mA Turn-Off Time t(off)425ns

*Measured under pulsed conditions. Pulse width=300μs. Duty cycle≤2%

ISSUE 2 - JUNE 2001

ZXTD09N50DE6

1m 1m

100m

100

1m 1m I C - Collector Current (A)

V CE(sat)v I C 0

V C E (s a t )- (V )

IC/IB=10IC/IB=50IC/IB=100

+25°C

-55°C

h F E - T y p i c a l G a i n

+100°C

0I C - Collector Current (A)

h FE v I C

V B E (o n )- (V )

0I C - Collector Current (A)

V BE(on)v I C +100°C +150°C

V C E (s a t )- (V )

+25°C 0

I C - Collector Current (A)

V CE(sat)v I C

+100°C +150°C

V B E (s a t )- (V )

+25°C 0

I C - Collector Current (A)

V BE(sat)v I C

1s 100ms I C - C o l l e c t o r C u r r e n t (A )

DC 10m

V CE - Collector Emitter Voltage (V)

Safe Operating Area

10ms 1ms 100μs

+25°C

-55°C IC/IB=50

VCE=2V

-55°C IC/IB=50

+25°C +150°C

+100°C -55°C 10m 100m 110

0.10.20.30.4

0.1

0.2

0.3

0.4

10m 100m 110

200

400

600

8000.20.40.60.8

1.00.3

0.6

0.9

1.15110100m

TYPICAL CHARACTERISTICS

ISSUE 2 - JUNE 2001

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ZXTD09N50DE6

ISSUE 2 - JUNE 2001

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Zetex plc.

Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.

Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)Fax: (44)161 622 4420

Zetex GmbH

Zetex Inc.Zetex (Asia) Ltd.These are supported by

Streitfeldstra?e 19Suite 3153701-04 Metroplaza, Tower 1agents and distributors in D-81673 München 700 Veterans Memorial Highway Hing Fong Road,major countries world-wide Germany

Hauppauge NY11788Kwai Fong Zetex plc 2001USA Hong Kong Telefon: (49) 89 45 49 49 0Telephone: (631) 543-7100Telephone:(852) 26100 611Fax: (49) 89 45 49 49 49

Fax: (631) 864-7630Fax: (852) 24250 494

https://www.wendangku.net/doc/5318656123.html,

This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.

ISSUE 2 - JUNE 2001

ZXTD09N50DE6

PACKAGE DIMENSIONS

PAD LAYOUT DETAILS

DIM Millimetres

Inches Min

Max Min Max A 0.90 1.450.350.057A10.000.1500.006A20.90 1.300.0350.051b 0.350.500.0140.019C 0.090.200.00350.008D 2.80 3.000.1100.118E 2.60 3.000.1020.118E1 1.50 1.750.0590.069L 0.100.60

0.0040.002

e 0.95REF 0.037REF e1 1.90REF

0.074REF

0°

10°0°10°