Document Title
128K x 8 High-Speed SRAM
Revision History
Revision No History Draft Date Remark
0A Initial Draft March 13,2001
0B Revise typo on page 6 and page 8October 18,2001
The attached datasheets are provided by ICSI. Integrated Circuit Solution Inc reserve the right to change the specifications and products. ICSI will answer to your questions about device. If you have any questions, please contact the ICSI offices.
2Integrated Circuit Solution Inc.
128K x 8 HIGH-SPEED CMOS STATIC RAM
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which may appear in this publication. ? Copyright 2000, Integrated Circuit Solution Inc.
DESCRIPTION
The ICSI IC61C1024 and IC61C1024L are very high-speed,low power, 131,072-word by 8-bit CMOS static RAMs. They are fabricated using ICSI 's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.
When CE1 is HIGH or CE2 is LOW (deselected), the device assumes a standby mode at which the power dissipation can be reduced by using CMOS input levels.
Easy memory expansion is provided by using two Chip Enable inputs, CE1 and CE2. The active LOW Write Enable (WE )controls both writing and reading of the memory.
The IC61C1024 and IC61C1024L are available in 32-pin 300mil SOJ, and 8*20mm TSOP-1, and 8*13.4mm TSOP-1packages.
FUNCTIONAL BLOCK DIAGRAM
FEATURES
?High-speed access time: 12, 15, 20, 25 ns ?Low active power: 600 mW (typical)
?Low standby power: 500 μW (typical) CMOS standby
?Output Enable (OE ) and two Chip Enable (CE1 and CE2) inputs for ease in applications ?Fully static operation: no clock or refresh required
?TTL compatible inputs and outputs ?Single 5V (±10%) power supply
?Low power version available: IC61C1024L ?Commercial and industrial temperature ranges available
TRUTH TABLE
Mode
WE CE1CE2OE I/O Operation Vcc Current Not Selected X H X X High-Z I SB 1, I SB 2(Power-down)X X L X High-Z I SB 1, I SB 2Output Disabled H L H H High-Z I CC 1, I CC 2Read H L H L D OUT I CC 1, I CC 2Write
L
L
H
X
D IN
I CC 1, I CC 2
12345678910111213141516
32313029282726252423222120191817
NC A16A14A12A7A6A5A4A3A2A1A0I/O0I/O1I/O2GND
VCC A15CE2WE A13A8A9A11OE A10CE1I/O7I/O6I/O5I/O4I/O3
PIN CONFIGURATION
32-Pin SOJ
PIN DESCRIPTIONS
A0-A16Address Inputs CE1Chip Enable 1 Input CE2Chip Enable 2 Input OE Output Enable Input WE Write Enable Input I/O0-I/O7Input/Output Vcc Power GND
Ground
OPERATING RANGE
Range
Ambient Temperature
V CC Commercial 0°C to +70°C
5V ± 10%Industrial
–40°C to +85°C
5V ± 10%
12345678910111213141516
32313029282726252423222120191817
A11A9A8A13WE CE2A15VCC NC A16A14A12A7A6A5A4
OE A10CE1I/O7I/O6I/O5I/O4I/O3GND I/O2I/O1I/O0A0A1A2A3
PIN CONFIGURATION
32-Pin 8x20mm TSOP-1 and 8x13.4mm TSOP-1
ABSOLUTE MAXIMUM RATINGS(1)
Symbol Parameter Value Unit
V TERM Terminal Voltage with Respect to GND–0.5 to +7.0V
T BIAS Temperature Under Bias–55 to +125°C
T STG Storage Temperature–65 to +150°C
P T Power Dissipation 1.5W
I OUT DC Output Current (LOW)20mA
Notes:
1.Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
CAPACITANCE(1,2)
Symbol Parameter Conditions Max.Unit
C IN Input Capacitance V IN = 0V5pF
C OUT Output Capacitance V OUT = 0V7pF
Notes:
1.Tested initially and after any design or process changes that may affect these parameters.
2.Test conditions: T A = 25°C, f = 1 MHz, Vcc = 5.0V.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter Test Conditions Min.Max.Unit V OH Output HIGH Voltage V CC = Min., I OH = –4.0 mA 2.4—V V OL Output LOW Voltage V CC = Min., I OL = 8.0 mA—0.4V V IH Input HIGH Voltage 2.2V CC + 0.5V V IL Input LOW Voltage(1)–0.30.8V
I LI Input Leakage GND ≤ V IN≤ V CC Com.–22μA
Ind.–55
I LO Output Leakage GND ≤ V OUT≤ V CC Com.–22μA
Outputs Disabled Ind.–55 Note:
1.V IL = –3.0V for pulse width less than 10 ns.
4Integrated Circuit Solution Inc.
IC61C1024 POWER SUPPLY CHARACTERISTICS(1)(Over Operating Range)
-12 ns -15 ns -20 ns-25 ns Symbol Parameter Test Conditions Min.Max.Min.Max.Min.Max.Min.Max.Unit I CC1Vcc Operating V CC = V CC MAX., CE = V IL Com.—85—85—85—85mA
Supply Current I OUT = 0 mA, f = 0Ind.—110—110—110—110
I CC2Vcc Dynamic Operating V CC = V CC MAX., CE = V IL Com.—170—160—150—140mA
Supply Current I OUT = 0 mA, f = f MAX Ind.—180—170—160—150
I SB1TTL Standby Current V CC = V CC MAX.,Com.—40—40—40—40mA
(TTL Inputs)V IN = V IH or V IL Ind.—60—60—60—60
CE1≥ V IH, f = 0 or
CE2 ≤ V IL, f = 0
I SB2CMOS Standby V CC = V CC MAX.,Com.—30—30—30—30mA
Current (CMOS Inputs)CE1≥ V CC – 0.2V,Ind.—40—40—40—40
CE2 ≤ 0.2V
V IN > V CC – 0.2V, or
V IN≤ 0.2V, f = 0
Note:
1.At f = f MAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
IC61C1024L POWER SUPPLY CHARACTERISTICS(1)(Over Operating Range)
-15 ns -20 ns-25 ns
Symbol Parameter Test Conditions Min.Max.Min.Max.Min.Max.Unit
I CC1Vcc Operating V CC = V CC MAX., CE = V IL Com.—85—85—85mA
Supply Current I OUT = 0 mA, f = 0Ind.—110—110—110
I CC2Vcc Dynamic Operating V CC = V CC MAX., CE = V IL Com.—160—150—140mA
Supply Current I OUT = 0 mA, f = f MAX Ind.—170—160—150
I SB1TTL Standby Current V CC = V CC MAX,Com.—40—40—40mA
(TTL Inputs)V IN = V IH or V IL Ind.—60—60—60
CE1≥ V IH, f = 0 or
CE2 ≤ V IL, f = 0
I SB2CMOS Standby V CC = V CC MAX.,Com.—500—500—500μA
Current (CMOS Inputs)CE1≥ V CC – 0.2V,Ind.—750—750—750
CE2 ≤ 0.2V
V IN > V CC – 0.2V, or
V IN≤ 0.2V, f = 0
Note:
1.At f = f MAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
READ CYCLE SWITCHING CHARACTERISTICS(1)(Over Operating Range)
-12(2)-15 ns-20 ns-25 ns
Symbol Parameter Min.Max.Min.Max.Min.Max.Min.Max.Unit t RC Read Cycle Time12—15—20—25—ns t AA Address Access Time—12—15—20—25ns t OHA Output Hold Time3—3—3—3—ns t ACE1CE1 Access Time—12—15—20—25ns t ACE2CE2 Access Time—12—15—20—25ns t DOE OE Access Time—6—7—9—9ns t LZOE(3)OE to Low-Z Output0—0—0—0—ns t HZOE(3)OE to High-Z Output060607010ns t LZCE1(3)CE1 to Low-Z Output2—2—3—3—ns t LZCE2(3)CE2 to Low-Z Output2—2—3—3—ns t HZCE(3)CE1 or CE2 to High-Z Output070809010ns t PU(4)CE1 or CE2 to Power-Up0—0—0—0—ns t PD(4)CE1 or CE2 to Power-Down—12—12—18—20ns Notes:
1.Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V
and output loading specified in Figure 1.
2.-12 ns device for IC61C1024 only.
3.Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
4.Not 100% tested.
AC TEST CONDITIONS
Parameter Unit
Input Pulse Level0V to 3.0V
Input Rise and Fall Times 3 ns
Input and Output Timing 1.5V
and Reference Level
Output Load See Figures 1 and 2
AC TEST LOADS
Figure 1Figure 2
6Integrated Circuit Solution Inc.
AC WAVEFORMS
READ CYCLE NO. 1(1,2)
(1,3)
Notes:
1.WE is HIGH for a Read Cycle.
2.The device is continuously selected. OE, CE1 = V IL, CE2 = V IH.
3.Address is valid prior to or coincident with CE1 LOW and CE2 HIGH transitions.
WRITE CYCLE SWITCHING CHARACTERISTICS(1,2)(Over Operating Range, Standard and Low Power)
-12 ns(3)-15 ns-20 ns-25 ns
Symbol Parameter Min.Max.Min.Max.Min.Max.Min.Max.Unit t WC Write Cycle Time12—15—20—25—ns t SCE1CE1 to Write End10—12—15—20—ns t SCE2CE2 to Write End10—12—15—20—ns t AW Address Setup Time to Write End10—12—15—20—ns t HA Address Hold from Write End0—0—0—0—ns t SA Address Setup Time0—0—0—0—ns t PWE(4)WE Pulse Width10—10—12—15—ns t SD Data Setup to Write End7—8—10—12—ns t HD Data Hold from Write End0—0—0—0—ns t HZWE(5)WE LOW to High-Z Output—7—7—10—12ns t LZWE(5)WE HIGH to Low-Z Output2—2—2—2—ns Notes:
1.Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V
and output loading specified in Figure 1.
2.The internal write time is defined by the overlap of CE1 LOW, CE2 HIGH and WE LOW. All signals must be in valid states to
initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the Write.
3.-12 ns device for IC61C1024 only.
4.Tested with OE HIGH.
5.Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
8Integrated Circuit Solution Inc.
AC WAVEFORMS
WRITE CYCLE NO. 1(CE Controlled, OE is HIGH or LOW) (1)
WRITE CYCLE NO. 2(OE is HIGH During Write Cycle) (1,2)
1.The internal write time is defined by the overlap of CE1 LOW, CE2 HIGH and WE LOW. All signals must be in valid states
to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the Write.
2.I/O will assume the High-Z state if OE = V IH.
WRITE CYCLE NO. 3(OE is LOW During Write Cycle) (1)
IC61C1024 STANDARD VERSION ORDERING INFORMATION Commercial Range: 0°C to +70°C Speed (ns)Order Part No.Package
12IC61C1024-12J300mil SOJ
12IC61C1024-12K400mil SOJ
12IC61C1024-12H8*13.4mm TSOP-1
12IC61C1024-12T8*20mm TSOP-1
15IC61C1024-15J300mil SOJ
15IC61C1024-15K400mil SOJ
15IC61C1024-15H8*13.4mm TSOP-1
15IC61C1024-15T8*20mm TSOP-1
20IC61C1024-20J300mil SOJ
20IC61C1024-20K400mil SOJ
20IC61C1024-20H88*13.4mm TSOP-1 20IC61C1024-20T8*20mm TSOP-1
25IC61C1024-25J300mil SOJ
25IC61C1024-25K400mil SOJ
25IC61C1024-25H8*13.4mm TSOP-1
25IC61C1024-25T8*20mm TSOP-1IC61C1024 STANDARD VERSION ORDERING INFORMATION
Industrial Range: –40°C to +85°C Speed (ns)Order Part No.Package
12IC61C1024-12JI300mil SOJ
12IC61C1024-12KI400mil SOJ
12IC61C1024-12HI8*13.4mm TSOP-1 12IC61C1024-12TI8*20mm TSOP-1
15IC61C1024-15JI300mil SOJ
15IC61C1024-15KI400mil SOJ
15IC61C1024-15HI8*13.4mm TSOP-1 15IC61C1024-15TI8*20mm TSOP-1
20IC61C1024-20JI300mil SOJ
20IC61C1024-20KI400mil SOJ
20IC61C1024-20HI8*13.4mm TSOP-1 20IC61C1024-20TI8*20mm TSOP-1
25IC61C1024-25JI300mil SOJ
25IC61C1024-25KI400mil SOJ
25IC61C1024-25HI8*13.4mm TSOP-1 25IC61C1024-25TI8*20mm TSOP-1
10Integrated Circuit Solution Inc.
IC61C1024L LOW POWER VERSION ORDERING INFORMATION Commercial Range: 0°C to +70°C Speed (ns)Order Part No.Package
15IC61C1024L-15J300mil SOJ
IC61C1024L-15K400mil SOJ
IC61C1024L-15H8*13.4mm TSOP-1
IC61C1024L-15T8*20mm TSOP-1 20IC61C1024L-20J300mil SOJ
IC61C1024L-20K400mil SOJ
IC61C1024L-20H8*13.4mm TSOP-1
IC61C1024L-20T8*20mm TSOP-1 25IC61C1024L-25J300mil SOJ
IC61C1024L-25K400mil SOJ
IC61C1024L-25H8*13.4mm TSOP-1
IC61C1024L-25T8*20mm TSOP-1IC61C1024L LOW POWER VERSION ORDERING INFORMATION
Industrial Range: –40°C to +85°C
Speed (ns)Order Part No.Package
15IC61C1024L-15JI300mil SOJ
IC61C1024L-15KI400mil SOJ
IC61C1024L-12HI8*13.4mm TSOP-1
IC61C1024L-15TI8*20mm TSOP-1 20IC61C1024L-20JI300mil SOJ
IC61C1024L-20KI400mil SOJ
IC61C1024L-12HI8*13.4mm TSOP-1
IC61C1024L-20TI8*20mm TSOP-1 25IC61C1024L-25JI300mil SOJ
IC61C1024L-25KI400mil SOJ
IC61C1024L-12HI8*13.4mm TSOP-1
IC61C1024L-25TI8*20mm TSOP-1
Integrated Circuit Solution Inc.
HEADQUARTER:
NO.2, TECHNOLOGY RD. V, SCIENCE-BASED INDUSTRIAL PARK,
HSIN-CHU, TAIWAN, R.O.C.
TEL: 886-3-5780333
Fax: 886-3-5783000
BRANCH OFFICE:
7F, NO. 106, SEC. 1, HSIN-TAI 5TH ROAD,
HSICHIH TAIPEI COUNTY, TAIWAN, R.O.C.
TEL: 886-2-26962140
FAX: 886-2-26962252
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