STT49GK14中文资料

Maximum Ratings

Unit 8049A

1150123010001070A

6600628050004750A 2s

i 150

500A/us

= ; method 1 (linear voltage rise)1000V/us 105W 0.5W o

C

-40...+125125-40...+125

30003600V~2.5-4.0/22-352.5-4.0/22-35

Nm/lb.in.

90

g

10V

m

Fig. 1Surge overload current

I TSM , I FSM : Crest value, t: duration

Fig. 2i 2dt versus time (1-10 ms)

Fig. 2a Maximum forward current

at case temperature

Fig. 5Three phase rectifier bridge: Power dissipation versus direct output current

and ambient temperature

100

101

102

103104

0.11

10

I G

V G

mA 1: I GT , T VJ = 125C

2: I GT , T VJ = 25C 3: I GT , T VJ = -40C

V

4: P GAV = 0.5 W

5: P GM = 5 W 6: P GM = 10 W I GD , T VJ = 125C

3

4

2

1

5

6

Fig. 3Power dissipation versus on-state current and ambient temperature

(per thyristor or diode)

Fig. 4 Gate trigger characteristics

10

100

1000

110

100

1000

mA I G

s

t gd Limit

typ.

T VJ = 25C

Fig. 6 Gate trigger delay time

3 x STT49

3 x MTC49

MTC49 MTC49 3 x STT49 STT49

STT49