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RH1014MJ中文资料

Operational Amplifier

A U

G W A W

W A R BSOLUTE

XI TI S

The RH1014M is the first precision quad operational amplifier which directly upgrades designs in the industry standard 8-pin DIP LM124/LM148/OP-11/5156 pin con-figuration. Low offset voltage (300μV max), low drift (≤2.5μV/°C), low offset current (≤1.5nA), and high gain (1.2 million min) combine to make the RH1014M four truly precision amplifers in one package.

The wafer lots are processed to Linear Technology’s in-house Class S flow to yield circuits usable in stringent military applications.

D U

ESCRIPTIO

Supply Voltage (22)

Differential Input Voltage...................................... ±30V Input Voltage .............. Equal to Positive Supply Voltage ................................ 5V Below Negative Supply Voltage Output Short-Circuit Duration......................... Indefinite Operating Temperature Range..............–55°C to 125°C Storage Temperature Range.................–65°C to 150°

C Lead Temperature (Soldering, 10 sec)..................300°C

100RH1014M BI

BURN-IN CIRCUIT PACKAGE INFORMATION

2(Pre-Irradiation)

–55°C ≤ T A≤ 125°C

V S = ±15V, V CM = 0V, unless otherwise noted.

T A = 25°C SUB-SUB-SYMBOL PARAMETER CONDITIONS NOTES MIN TYP MAX GROUP MIN TYP MAX GROUP UNITS V OS Input Offset Voltage30015502,3μV

245017503μV

V CM = 0.1V, T A = 125°C27502μV ?V OS Average Tempco of Offset1 2.5μV/°C ?Temp Voltage

?V OS Long Term V OS Stability0.5μV/Mo ?Time

I OS Input Offset Current101202,3nA

2101202,3nA I B Input Bias Current301452,3nA

25011202,3nA e n Input Noise Voltage0.1Hz to 10Hz0.55μV P-P

Input Noise Voltage f O = 10Hz24nV/√Hz Density f O = 1000Hz22nV/√Hz i n Input Noise Current f O = 10Hz0.07pA/√Hz

Density

R IN Input Resistance Differential170M?

Common Mode4G?A VOL Large-Signal Voltage Gain V O = ±10V, R L≥ 2k 1.240.255,6V/μV

V O = ±10V, R L≥ 600?0.54V/μV

V O = 5mV to 4V, R L = 500?21V/μV Input Voltage Range1 13.5V

1–15.0V

1,2 3.5V

1,2 0V CMRR Common-Mode Rejection V CM = 13.5V, –15V971dB Ratio V CM = 13V, –14.9V942,3dB PSRR Power Supply Rejection V S = ±2V to ±18V1001972,3dB Ratio

Channel Separation V O = ±10V, R L = 2k1201dB V OUT Output Voltage Swing R L≥ 2k±12.54±11.55,6V

Output Low, No Load2254mV

Output Low, 600? to GND2104185,6mV

Output Low, I SINK = 1mA23504mV

Output High, No Load2 4.04V

Output High, 600? to GND2 3.44 3.15,6V SR Slew Rate0.24V/μs

I S Supply Current Per Amplifier0.5510.702,3mA

20.5010.652,3mA TABLE 1: ELECTRICAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS

NOTES MIN MAX MIN MAX MIN MAX

MIN MAX

MIN MAX UNITS

V OS Input Offset Voltage

450450600750900

μV 2

600600750900μV I OS Input Offset Current

1010152025

nA 2

10101520nA I B

Input Bias Current

6075100175250nA 2

100

125

200

nA Input Voltage Range

1 13.5 13.5 13.5 13.5 13.5V 1–15.0–15.0–15.0–15.0–15.0

V 2 3.5 3.5 3.5 3.5V 2

0000V CMRR Common-Mode Rejection

V CM = 13V, –15V 9797949086dB Ratio

PSRR Power Supply Rejection V S = ±10V to ±18V 10098948680dB Ratio

A VOL Large-Signal Voltage Gain R L ≥ 10k, V O = ±10V 5002001005025V/mV

V OUT

Maximum Output Voltage R L ≥ 10k

±12.5

V Swing

Output Low, No Load 225304050mV Output Low, 600? to

GND 210101010mV Output Low, I SINK = 1mA 20.6

0.8

1.0

1.6

V Output High, No Load 2 4.0 4.0 4.0 4.0V Output High, 600? to GND

3.4 3.2 3.0 2.8V SR Slew Rate R L ≥ 10k 0.13

0.12

0.11

0.07

0.01

V/μs I S

Supply Current

Per Amplifier

0.550.550.550.550.55

mA 20.50

0.50

V S = ±15V, V CM = 0V, T A = 25°C, unless otherwise noted.

TABLE 1A: ELECTRICAL CHARACTERISTICS (Post-Irradiation)

200KRAD(Si)

100KRAD(Si)

50KRAD(Si)

20KRAD(Si)10KRAD(Si)Note 1: Guaranteed by design, characterization, or correlation to other

tested parameters.

Note 2: Specification applies for V S + = 5V, V S – = 0V, V CM = 0V,V OUT = 1.4V.

MIL-STD-883 TEST REQUIREMENTS

SUBGROUP Final Electrical Test Requirements (Method 5004)1*,2,3,4,5,6Group A Test Requirements (Method 5005)1,2,3,4,5,6Group B and D for Class S

1,2,3

End Point Electrical Parameters (Method 5005)* PDA applies to subgroup 1. See PDA Test Notes.

TABLE 2: ELECTRICAL TEST REQUIRE E TS

U W

PDA Test Notes

The PDA is specified as 5% based on failures from group A, subgroup 1,tests after cooldown as the final electrical test in accordance with method 5004 of MIL-STD-883. The verified failures of group A, subgroup 1, after burn-in divided by the total number of devices submitted for burn-in in that lot shall be used to determine the percent for the lot.

Linear Technology Corporation reserves the right to test to tighter limits than those given.

TOTAL DOSE BIAS CIRCUIT

Negative Slew Rate

Positive Slew Rate

C C HARA TERISTICS

U W

A TYPICAL PERFOR CE TOTAL DOSE KRAD (Si)

N E G A T I V E S L E W R A T E (

V /μs )

0.8

0.6

0.4

0.2

101001000

RH1014M G03

TOTAL DOSE KRAD (Si)

P O S I T I V E S L E W R A T E (

V /μs )

0.8

0.6

0.4

0.2

101001000

RH1014M G02

TOTAL DOSE KRAD (Si)

S U P P L Y C U R R E N T

(m A )

0.8

0.6

0.40.20

101001000

RH1014M G01

Supply Current (Per Amplifier)

C C HARA TERISTICS

U W

A TYPICAL PERFOR CE Power Supply Rejection Ratio

TOTAL DOSE KRAD (Si)

P O W E R S U P P L Y R E J E C T I O N R A T I O (d B )

140

130120110100908070

101001000

RH1014M G09

TOTAL DOSE KRAD (Si)

I N P U T N O I S E V O L T A G E D E N S I T Y (n V /√H z )

100

9080706050403020100101001000

RH1014M G10

Input Noise Voltage Density

TOTAL DOSE KRAD (Si)

G A I N B A N D W I D T H P R O D U C T (k H z )

1000

9008007006005004003002001000101001000

RH1014M G11

Gain Bandwidth Product

Open-Loop Gain

TOTAL DOSE KRAD (Si)

O P E N -L O O P G A I N (d B )

150

140

1301201101009080

101001000RH1014M G07

TOTAL DOSE KRAD (Si)

I N P U T O F F S E T V O L T A G E (μV )

3002001000

–100–200–300

101001000

RH1014M G04

Input Offset Voltage

Input Offset Current

TOTAL DOSE KRAD (Si)

I N P U T O F F S E T C U R R E N T (n A )

–1

–2

101001000

RH1014M G06

Input Bias Current

TOTAL DOSE KRAD (Si)

I N P U T B I A S C U R R E N T (n A )

7060

50403020100

101001000

RH1014M G05

TOTAL DOSE KRAD (Si)

C O M M O N -M O

E R E J E C T I O N R A T I O (d B )

1501401301201101009080

101001000

RH1014M G08

Common-Mode Rejection Ratio

I nformation furnished by Linear Technology Corporation is believed to be accurate and reliable.However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen-tation that the interconnection of its circuits as described herein will not infringe on existing patent rights.

? I.D. No. 66-11-1014 Rev. G 1007

Linear Technology Corporation 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408) 432-1900 ● FAX: (408) 434-0507 ● https://www.wendangku.net/doc/6215728527.html,