? 2002 IXYS All rights reserved
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HiPerFRED TM Epitaxial Diode
with soft recovery
Features ?International standard package ?Planar passivated chips ?Very short recovery time
?Extremely low switching losses ?Low I RM -values
?Soft recovery behaviour ?
Epoxy meets UL 94V-0
Applications
?Antiparallel diode for high frequency switching devices ?Antisaturation diode ?Snubber diode
?Free wheeling diode in converters and motor control circuits
?Rectifiers in switch mode power supplies (SMPS)?Inductive heating
?Uninterruptible power supplies (UPS)?Ultrasonic cleaners and welders
Advantages
?Avalanche voltage rated for reliable operation
?Soft reverse recovery for low EMI/RFI
?Low I RM reduces:
-Power dissipation within the diode -Turn-on loss in the commutating switch Dimensions see Outlines.pdf
Pulse test:① Pulse Width = 5 ms, Duty Cycle < 2.0 %
② Pulse Width = 300 μs, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
A = Anode, C = Cathode, TA
B = Cathode
TO-247 AD
C
A
C (TAB)
C
A
I FAV =60 A
V RRM =250
V t rr =30 ns
V RSM
V RRM
Type
V V 250
250
DSEP 60-025A
237
Symbol Conditions
Maximum Ratings
I FRMS 70A I FAVM T C = 120°C; rectangular, d = 0.560A I FSM T VJ = 45°C; t p = 10 ms (50 Hz), sine 600A E AS T VJ = 25°C; non-repetitive 1.6mJ I AS = 3.5 A; L = 180 μH
I AR V A = 1.5·V R typ.; f = 10 kHz; repetitive
0.4
A T VJ -55...+175
°C T VJM 175°C T stg -55...+150
°C P tot T C = 25°C 230W M d mounting torque 0.8...1.2
Nm Weight
typical
6
g
Symbol Conditions
Characteristic Values typ.max.
I R
①
T VJ = 25°C;V R = V RRM 650
μA T VJ = 150°C;V R = V RRM 2.5mA V F ②I F = 60 A;
T VJ = 150°C 1.07V T VJ = 25°C
1.31V R thJC 0.65
K/W R thCH 0.25
K/W t rr I F = 1 A; -di/dt = 300 A/μs;30ns
V R = 30 V; T VJ = 25°C
I RM
V R = 100 V;I F = 130 A; -di F /dt = 100 A/μs 5
6
A
T VJ = 100°C
Preliminary data sheet
https://www.wendangku.net/doc/6b16261521.html,/
分销商库存信息: IXYS
DSEP60-025A