SKM195GAL124DN中文资料

SEMITRANS

TM

2N

Low Loss IGBT Modules

SKM 195GB124DN SKM 195GAL124DN

Features

! " " "

# $ % & '(

) * & ! +, " " - " "

./ " " 0/

Typical Applications & " " 1+ ! " $ " ! ! 1+

,+ " 2 2 $

3 $ "

GB GAL

Absolute Maximum Ratings 4056+ & "

Symbol Conditions Values

Units

IGBT

7+3 .0//7 + 405 9/ 6+

0'/ .9/ , +:; 405 9/ 6+ 4. 50/ <'/ ,7 3

=0/

7 !> ? 3:, ? @ A/BBB C .5/ .05

6+7

,+ . B

05//7Inverse diode

) 405 9/ 6+

0// .'/ , ):; 405 9/ 6+ 4. 50/ <'/ , ) ;

4./ D BD >4.5/6+

.A5/

,

Characteristics

4056+ & "

Symbol Conditions min.

typ.max.Units

IGBT

7 3 7 347+3 +4' ,

A 5

5 5' 57 +3 7 34/ 7+347+3 >405 .05 6+/ 0/ ' ,7+3 ? >405 .05 6+

. . . . . 05 . 05 7 +37 34.57 >405 .05 6+' '' 9 '' 9 ./ '' E 7+3 +4.5/, 7 34.57 ! 0 . 0 A 0 A5 0 95

7+ " & "

...5 )+ 7 34/ 7+34057 &4.;#F

. '0 )+ / 9. ) +305

#:++GC33G B 405 .05 6+/ H5 . E " 7++4'//7 +4.5/,

H/ : 4: &&4H E >4.056+55 " && 7 34=.57

AI/ &

'5 3 3 &&

0' 0<

J

Inverse diode

7)473+ )4.5/,D 7 34/7D >405 .05 6+0 . 9 0 577 ? >4.05 6+. .. 07 >4.05 6+

H

E ::; )4.5/,D >4.05 6+9H ,K " L" 4.5//,LM .I

M+3

7 347

J FWD

7)473+ )4.5/,D 7 34/7 >405 .05 6+0 . 9 77 ? >4.05 6+. .. 07 >4.05 6+

H

E ::; )4.5/,D >4.05 6+9H ,K " L" 4/,LM .I M+3 7 347

J Thermal characteristics

: >

/ .0NL-: > 1 ! 1 " / 0

; O ;'<5 ; ;5

0 5

5

.'/

Fig.1Typ.output characteristic,inclusive R CC'+EE'Fig.2Rated current vs.temperature I C =f (T C )

Fig.3Typ.turn-on /-off energy =f (I C )Fig.4Typ.turn-on /-off energy =f (R G )

Fig.5Typ.transfer characteristic Fig.6Typ.gate charge characteristic

Fig.7Typ.switching times vs.I C Fig.8Typ.switching times vs.gate resistor R G

Fig.9Transient thermal impedance of IGBT Z thp(j-c)=f (t p );D =t p /t c =t p *f

Fig.10Transient thermal impedance of FWD Z thp(j-c)=f (t p );D =t p /t c =t p *f

Fig.11CAL diode forward characteristic Fig.12Typ.CAL diode peak reverse recovery current

Fig.13Typ.CAL diode recovered charge

UL Recognized File no.E 63532

Dimensions

in mm

+ 1

I<

+ 1I<

, + 1IA P 1I<

This is an electrostatic discharge sensitive device (ESDS),international standard IEC 60747-1,Chapter IX.

This technical information specifies semiconductor devices but promises no characteristics.No warranty or guarantee expressed or implied is made regarding delivery,performance or suitability.