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STP11NK50ZFP中文资料

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June 2003STP11NK50Z -STP11NK50ZFP

STB11NK50Z

N-CHANNEL 500V -0.48? -10A TO-220/TO-220FP/D 2PAK

Zener-Protected SuperMESH?Power MOSFET

s TYPICAL R DS (on)=0.48?

s EXTREMELY HIGH dv/dt CAPABILITY s 100%AVALANCHE TESTED s GATE CHARGE MINIMIZED

s VERY LOW INTRINSIC CAPACITANCES s

VERY GOOD MANUFACTURING REPEATIBILITY

ADD SUFFIX “T4”FOR ORDERING IN TAPE &REEL (D 2PAK VERSION)

DESCRIPTION

The SuperMESH?series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH?layout.In addition to pushing on-resistance significantly down,special care is tak-en to ensure a very good dv/dt capability for the most demanding applications.Such series comple-ments ST full range of high voltage MOSFET s in-cluding revolutionary MDmesh?products.

APPLICATIONS

s HIGH CURRENT,HIGH SPEED SWITCHING s IDEAL FOR OFF-LINE POWER SUPPLIES,ADAPTORS AND PFC s LIGHTING

ORDERING INFORMATION

TYPE V DSS R DS(on)I D Pw STB11NK50Z STP11NK50Z STP11NK50ZFP

500V 500V 500V

<0.52?<0.52?<0.52?

10A 10A 10A

125W 125W 30W

SALES TYPE MARKING PACKAGE PACKAGING STB11NK50ZT4B11NK50Z D 2PAK TAPE &REEL

STP11NK50Z P11NK50Z TO-220TUBE STP11NK50ZFP

P11NK50ZFP

TO-220FP

TUBE

STP11NK50Z -STP11NK50ZFP -STB11NK50Z

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ABSOLUTE MAXIMUM RATINGS

( )Pulse width limited by safe operating area

(1)I SD ≤10A,di/dt ≤200A/μs,V DD ≤V (BR)DSS ,T j ≤T JMAX.(*)Limited only by maximum temperature allowed

THERMAL DATA

AVALANCHE CHARACTERISTICS

GATE-SOURCE ZENER DIODE

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability,but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source.In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity.These integrated Zener diodes thus avoid the usage of external components.

Symbol Parameter

Value

Unit TO-220/D 2PAK

TO-220FP

V DS Drain-source Voltage (V GS =0)500V V DGR Drain-gate Voltage (R GS =20k ?)500V V GS Gate-source Voltage

±30

I D Drain Current (continuous)at T C =25°C 1010(*)A I D Drain Current (continuous)at T C =100°C 6.3 6.3(*)A I DM ( )Drain Current (pulsed)4040(*)A P TOT Total Dissipation at T C =25°C 12530W Derating Factor

0.24

W/°C V ESD(G-S)Gate source ESD(HBM-C=100pF,R=1.5K ?)4000V dv/dt (1)Peak Diode Recovery voltage slope 4.5V/ns

Viso Insulation Withstand Voltage (DC)--2500

V T j T stg

Operating Junction Temperature Storage Temperature

-55to 150-55to 150

°C °C

TO-220/D 2PAK

TO-220FP

Rthj-case Thermal Resistance Junction-case Max 1

4.2

°C/W Rthj-amb

Thermal Resistance Junction-ambient Max

62.5°C/W T l

Maximum Lead Temperature For Soldering Purpose

300

°C

Symbol Parameter

Max Value

Unit I AR Avalanche Current,Repetitive or Not-Repetitive (pulse width limited by T j max)

10A E AS

Single Pulse Avalanche Energy

(starting T j =25°C,I D =I AR ,V DD =50V)

190

Symbol Parameter

Test Conditions

Min.Typ.

Max.

Unit BV GSO

Gate-Source Breakdown Voltage

Igs=±1mA (Open Drain)

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ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)ON/OFF

DYNAMIC

SWITCHING ON

SWITCHING OFF

SOURCE DRAIN DIODE

Note: 1.Pulsed:Pulse duration =300μs,duty cycle 1.5%.

2.Pulse width limited by safe operating area.

3.C oss eq.is defined as a constant equivalent capacitance giving the same charging time as C oss when V DS increases from 0to 80%V DSS .

Symbol Parameter

Test Conditions

Min.Typ.

Max.

Unit V (BR)DSS Drain-source

Breakdown Voltage I D =1mA,V GS =0

500

V I DSS Zero Gate Voltage

Drain Current (V GS =0)V DS =Max Rating

V DS =Max Rating,T C =125°C 150μA μA I GSS Gate-body Leakage Current (V DS =0)V GS =±20V

±10μA V GS(th)Gate Threshold Voltage V DS =V GS ,I D =100μA 3

3.75

4.5V R DS(on)

Static Drain-source On Resistance

V GS =10V,I D =5A

0.48

0.52

Symbol Parameter

Test Conditions

Min.

Typ.Max.

Unit g fs (1)Forward Transconductance V DS =15V ,I D =5A

7.7S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS =25V,f =1MHz,V GS =0

139017342pF pF pF C oss eq.(3)

Equivalent Output Capacitance

V GS =0V,V DS =0V to 400V

110

Symbol Parameter

Test Conditions

Min.

Typ.Max.

Unit t d(on)t r Turn-on Delay Time Rise Time

V DD =250V,I D =5.5A R G =4.7?V GS =10V

(Resistive Load see,Figure 3)14.518ns ns Q g Q gs Q gd

Total Gate Charge Gate-Source Charge Gate-Drain Charge

V DD =400V,I D =11.4A,V GS =10V

491025

68nC nC nC

Symbol Parameter

Test Conditions

Min.

Typ.Max.

Unit t d(off)t f Turn-off Delay Time Fall Time

V DD =250V,I D =5.5A R G =4.7?V GS =10V

(Resistive Load see,Figure 3)4115ns ns t r(Voff)t f t c

Off-voltage Rise Time Fall Time

Cross-over Time

V DD =400V,I D =11.4A,R G =4.7?,V GS =10V

(Inductive Load see,Figure 5)

11.51227

ns ns ns

Symbol Parameter

Test Conditions

Min.

Typ.

Max.Unit I SD I SDM (2)Source-drain Current

Source-drain Current (pulsed)1040A A V SD (1)Forward On Voltage I SD =10A,V GS =0 1.6

V t rr Q rr I RRM

Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current

I SD =10A,di/dt =100A/μs V DD =36V,T j =150°C (see test circuit,Figure 5)

3082.416

ns nC A

STP11NK50Z -STP11NK50ZFP -STB11NK50Z

Output Characteristics

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Source-drain Diode Forward Characteristics

Normalized BVDSS vs Temperature

Maximum Avalanche Energy vs Temperature

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Fig.5:Test Circuit For Inductive Load Switching And Diode Recovery Times

Fig.4:Gate Charge test Circuit

Fig.2:Unclamped Inductive Waveform

Fig.1:Unclamped Inductive Load Test

Circuit

Fig.3:Switching Times Test Circuit For Resistive

Load

STP11NK50Z-STP11NK50ZFP-STB11NK50Z

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-STP11NK50ZFP -

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TAPE AND REEL

SHIPMENT (suffix ”T4”)*

TUBE SHIPMENT (no suffix)*

D 2PAK FOOTPRINT

*on sales type

DIM.mm inch MIN.

MAX.MIN.

MAX.A 330

12.992

B 1.50.059

C 12.813.20.5040.520

D 20.20795G 24.426.40.960 1.039N 100

3.937

30.4 1.197

BASE QTY BULK QTY 1000

1000REEL MECHANICAL DATA

DIM.mm inch MIN.MAX.MIN.

MAX.

A010.510.70.4130.421B015.715.90.6180.626D 1.5 1.60.0590.063D1 1.59 1.610.0620.063E 1.65 1.850.0650.073F 11.411.60.4490.456K0 4.8 5.00.1890.197P0 3.9 4.10.1530.161P111.912.10.4680.476P2 1.9 2.1

0.0750.082R 50 1.574

T 0.250.350.00980.0137

23.7

24.30.9330.956

TAPE MECHANICAL DATA

STP11NK50Z-STP11NK50ZFP-STB11NK50Z

12/12Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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