EPG 591 Technical data

EPG 591 Technical Data

2013/01/02

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Test Condition

?

Substrate ：Bare Si ?

Film Thickness ：4.5 um ?

Soft Bake ：110℃/ 90sec(Hot Plate)?

Exposure ：Canon FPA2500 I2+ (NA=0.58)?Development ：EPD1000 Puddle 120sec, 23℃(TMAH 2.38%)

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Exposure Latitude

Mask CD: 5um

310mJ 330mJ 350mJ

EPG 591 (Thickness=4.5um)

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Resolution

Exposure: 300mJ

3.0um 2.0um 1.0um

4.0um

6

40000

47500

55000

62500

70000

775008500092500100000107500115000

122500

130000

137500

5001000150020002500300035004000450050005500

Spin Speed(rpm)

T h i c k n e s s (A )EPG 591_460cP Spin Curve

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Substrate:4”Bare Silicon wafer with HMDS

Spin:1350rpm/20sec (TK=10um )

Baking:110℃/140sec(Hot plate)

Holding time:1hr/RT

Exposure:300mJ/cm 2(board band GPE-5k hard contact)Develop.: 2.38% TMAH 180sec at 23℃/dip

Stripper: NMP 20min at 85 ℃

Process Conditions

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Line:6um Line:5um

SEM Profile

Hole:6um Hole:5um

For Au Bump Application

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Substrate: 8-inch Au wafer

Pre bake: 110 ℃/ 15min (oven)

Film Thickness: 20um

Holding: 1 hr / 25℃

Exposure: Ultratech Spectrum 3E, 2200~2500mJ/cm 2Development: AZ400K / 5 min / 23℃/ dip

Plating: Atotech(cyanide), 46 ℃/ 60min, 0.4A / dm 2

Process Conditions

112200 mJ 2300 mJ 2400 mJ 2500 mJ

Bump/Space: 20um/7um

Results of Plating Test

After Develop.

After Plating

After stripping