Typ Max 648389120R θJL 5370Maximum Junction-to-Lead C
Thermal Characteristics Parameter
Units Maximum Junction-to-Ambient A t ≤ 10s R θJA °C/W Maximum Junction-to-Ambient A Steady-State °C/W AO8810
Common-Drain Dual N-Channel Enhancement Mode Field
Units BV DSS 20
V 1T J =55°C
μA V GS(th)0.40.61V I D(ON)30
A 16.520T J =125°C
282024m ?2432m ?g FS 29S V SD 0.76
1V I S
A C iss 1160
pF C oss 187pF C rss 146pF R g 1.5?Q g 16nC Q gs 0.8nC Q gd 3.8nC t D(on) 6.2ns t r 12.7ns t D(off)51.7ns t f 16ns t rr 17.7ns Q rr 6.7
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
I F =7A, dI/dt=100A/μs
Drain-Source Breakdown Voltage On state drain current
I D =250μA, V GS =0V V GS =4.5V, V DS =5V V GS =4.5V, I D =7A
Reverse Transfer Capacitance I F =7A, dI/dt=100A/μs Electrical Characteristics (T J =25°C unless otherwise noted)STATIC PARAMETERS Parameter
Conditions I DSS μA Gate Threshold Voltage
V DS =V GS I D =250μA V DS =16V, V GS =0V
Zero Gate Voltage Drain Current I GSS Gate-Body leakage current V DS =0V, V GS =±4.5V R DS(ON)
Static Drain-Source On-Resistance
Diode Forward Voltage m ?V GS =2.5V, I D =5.5A I S =1A,V GS =0V V DS =5V, I D =7A V GS =1.8V, I D =5A Turn-On Rise Time Turn-Off DelayTime V GS =5V, V DS =10V, R L =1.35?, R GEN =3?
Gate resistance V GS =0V, V DS =0V, f=1MHz
Turn-Off Fall Time SWITCHING PARAMETERS Total Gate Charge V GS =4.5V, V DS =10V, I D =7A
Gate Source Charge Turn-On DelayTime DYNAMIC PARAMETERS V GS =0V, V DS =10V, f=1MHz Gate Drain Charge V DS =0V, V GS =±8V Maximum Body-Diode Continuous Current
Input Capacitance Output Capacitance A: The value of R θJA is measured with the device mounted on 1in 2
FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 μs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2
FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The SOA curve provides a single pulse rating. Rev 3 : June 2005
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS