ktf16c256_512_1gx64hz_DDR3L_EDJ

ktf16c256_512_1gx64hz_DDR3L_EDJ

ktf16c256_512_1gx64hz_DDR3L_EDJ

1.35V DDR3L SDRAM SODIMM

EBJ81UG8EFU0Features

•DDR3L functionality and operations supported as defined in the component data sheet

•204-pin, small-outline dual in-line memory module (SODIMM)

•Fast data transfer rates: PC3-12800, PC3-10600•8GB (1 Gig x 64)

•V DD = 1.35V (1.283–1.45V)•V DD = 1.5V (1.425–1.575V)

•Backward compatible with standard 1.5V (±0.075V)DDR3 systems •V DDSPD = 3.0–3.6V

•Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals •Dual rank

•Fixed burst chop (BC) of 4 and burst length (BL) of 8via the mode register set (MRS)

•On-board I 2C serial presence-detect (SPD) EEPROM •Gold edge contacts •Halogen-free •Fly-by topology

•Terminated control, command, and address bus Figure 1: 204-Pin SODIMM (MO-268 R/C F3)

Options

Marking

•Operating temperature

–Commercial (0°C ≤ T A ≤ +70°C)None •Package

–204-pin DIMM (lead-free/halogen-free)

F •Frequency/CAS latency

– 1.25ns @ CL = 11 (DDR3-1600)-GN – 1.5ns @ CL = 9 (DDR3-1333)

-DJ

Table 1: Key Timing Parameters

8GB (x64, DR) 204-Pin 1.35V DDR3L SODIMM

Features

PDF: 09005aef85b2e9c3

ktf16c256_512_1gx64hz_DDR3L_EDJ.pdf - Rev. A 9/14 EN 1

Micron Technology, Inc. reserves the right to change products or specifications without notice.

© 2014 Micron Technology, Inc. All rights reserved.

Products and specifications discussed herein are subject to change by Micron without notice.

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