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BAW78C中文资料

BAW78C中文资料
BAW78C中文资料

Maximum Ratings Type Ordering Code (tape and reel)Marking Package 1)Pin Configuration BAW 78A BAW 78B BAW 78C BAW 78D

Q62702-A778Q62702-A779Q62702-A784Q62702-A109

GA GB GC

GD

SOT-89

Parameter Symbol Values Unit

Reverse voltage V R 50V

Forward current I F 1A Junction temperature

T j

150?C

Total power dissipation T S =125?C

P tot 1W Storage temperature range T stg – 65 … + 150

Peak reverse voltage V RM 50

Surge forward current t = 1μs

I FS 10Peak forward current I FM 1Thermal Resistance Junction - ambient 2)R th JA ≤ 95K/W

BAW 78 B BAW 78 C BAW 78D BAW 78 A 100100

200200

400400

Junction - soldering point

R th JS

≤ 25

1)For detailed information see chapter Package Outlines.

2)

Package mounted on epoxy pcb 40mm × 40mm × 1.5mm/6cm 2 Cu.

q

Switching applications q High breakdown voltage

Silicon Switching Diodes

BAW 78A

… BAW 78D

Electrical Characteristics

at T

A = 25 ?C, unless otherwise specified.Test circuit for reverse recovery time

Pulse generator:t p = 5μs,D = 0.05

Oscillograph:

R = 50?t r = 0.6ns,R j = 50?

t r = 0.35ns C ≤1pF

Unit

Values Parameter

Symbol

min.

typ.

max.

DC characteristics V

Breakdown voltage I (BR) = 100μA

BAW 78A BAW 78B BAW 78C BAW 78D

V (BR)

50100200400

––––

––––

μA

Reverse current V R =V Rmax

V R =V Rmax ,T A = 150 ?C I R

––

––

150

AC characteristics μs

Reverse recovery time I F = 200mA,I R = 200mA,R L = 100?

measured at I R = 20mA

t rr

1

V

Forward voltage 1)I F = 1A I F = 2A

V F

––

––

1.62

pF

Diode capacitance V R = 0,f = 1MHz C D –10–1)

Pulse test:t p ≤300μs,D = 2%.

Forward current I F =f (T A *;T S )*Package mounted on epoxy Peak forward current I FM =f (t )T A

= 25 ?C Forward current I F =f (V F )T A = 25 ?C

Reverse current I R =f (T A )V R =V

Rmax

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