Maximum Ratings Type Ordering Code (tape and reel)Marking Package 1)Pin Configuration BAW 78A BAW 78B BAW 78C BAW 78D
Q62702-A778Q62702-A779Q62702-A784Q62702-A109
GA GB GC
GD
SOT-89
Parameter Symbol Values Unit
Reverse voltage V R 50V
Forward current I F 1A Junction temperature
T j
150?C
Total power dissipation T S =125?C
P tot 1W Storage temperature range T stg – 65 … + 150
Peak reverse voltage V RM 50
Surge forward current t = 1μs
I FS 10Peak forward current I FM 1Thermal Resistance Junction - ambient 2)R th JA ≤ 95K/W
BAW 78 B BAW 78 C BAW 78D BAW 78 A 100100
200200
400400
Junction - soldering point
R th JS
≤ 25
1)For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40mm × 40mm × 1.5mm/6cm 2 Cu.
q
Switching applications q High breakdown voltage
Silicon Switching Diodes
BAW 78A
… BAW 78D
Electrical Characteristics
at T
A = 25 ?C, unless otherwise specified.Test circuit for reverse recovery time
Pulse generator:t p = 5μs,D = 0.05
Oscillograph:
R = 50?t r = 0.6ns,R j = 50?
t r = 0.35ns C ≤1pF
Unit
Values Parameter
Symbol
min.
typ.
max.
DC characteristics V
Breakdown voltage I (BR) = 100μA
BAW 78A BAW 78B BAW 78C BAW 78D
V (BR)
50100200400
––––
––––
μA
Reverse current V R =V Rmax
V R =V Rmax ,T A = 150 ?C I R
––
––
150
AC characteristics μs
Reverse recovery time I F = 200mA,I R = 200mA,R L = 100?
measured at I R = 20mA
t rr
–
1
–
V
Forward voltage 1)I F = 1A I F = 2A
V F
––
––
1.62
pF
Diode capacitance V R = 0,f = 1MHz C D –10–1)
Pulse test:t p ≤300μs,D = 2%.
Forward current I F =f (T A *;T S )*Package mounted on epoxy Peak forward current I FM =f (t )T A
= 25 ?C Forward current I F =f (V F )T A = 25 ?C
Reverse current I R =f (T A )V R =V
Rmax