HUM3004R中文资料
K E Y F E A T U R E S
Non-magnetic Package For MRI Application. High Power, High Voltage Package (4 kV -40 kW) Stable High Voltage Chip Passivation. High Current Rating. High Surge Current Rating. Low Rs, Low Loss, Low Distortion Design.
DESCRIPTION
These Microsemi PIN diodes are perfect for high power switching applications where high isolation, low loss, low distortion characteristics, and high power handling capability are critical. These PIN diodes utilize Microsemi’s SOGO passivation process for superior stable high voltage operation. The package is a modified DO-4 structure for ease of mount down
with excellent thermal properties. No thin internal straps are used for electrical connections. A surge current of 150 amperes at half sine 8.3 ms is easily handled.
IMPORTANT: For the most current data, consult MICROSEMI ’s website: https://www.wendangku.net/doc/768959867.html,
DO-4 PIN DIODE
A P P L I C A T I O N
S /B E N E F I T S
MRI Applications.
High Power Antenna Switching. Band Switching.
Industrial Heating.
M a x i m u m R a t i n g s @ 25oC
(U N L E S S O T H E R W I S E S P E C I F I E D )
TYPE
Parameter S y m b o l
HUM3002 HUM3003 HUM3004 Unit
Reverse Voltage
I R = 10μA
V R 2,000 3,000 4,000 V
Average Power
Dissipation @ Stud =50°C
I O 50 50 50 W
RF Power Handling Capability(CW)
@Zo = 50 OHms
Rs = 0.1 OHM @ Stud =50°C P RF 40 40 40 kW Non-Repetitive
Sinusoidal Surge Current (8.3 ms)
I FSM 150 150 150 A
Storage Temperature Range T STG -55°C to +150°C -55°C to +150°C -55°C to
+150°C °C
Operating Temperature Range T OP -55°C to +125 -55°C to +125 -55°C to
+125 °C
Thermal resistance
Junction-to Case
R θ
JC
1.5 1.5 1.5 °C/W Parameter Symbol Conditions Min Typ. Max Units
Diode Resistance R S F= 10 MHz, If = 250 mA 0.1 0.2 ?
Capacitance C T C T F= 1 MHz, 100 V 4.3 5.0 pF
Reverse Current I R V R @ Rated Voltage 10 μA
Carrier Lifetime
τ If = 10 mA / 100 V 20 30 μs Parallel Resistance R P F= 1 MHz, 100 V 5 k ?
Forward Voltage Vf If = 0.5 A 0.75 V
E L E C T R I C A L C H A R A C T E R I S T I C S