IRFP2907中文资料

Parameter Description

Min Typ.Max Test Conditions V

(BR)DSS Drain-to-Source Breakdown Voltage 75V ––––––V GS = 0V, I D = 250μA R DS(on)***Static Drain-to-Source On-Resistance ––– 2.5m ? 4.5m ?V GS = 10V, I D = 110A V GS(th)Gate Threshold Voltage

2.0––– 4.0V V DS = V GS , I D = 250μA

I DSS Drain-to-Source Leakage Current ––––––20μA V DS = 75V, V GS = 0V, T J = 25°C I GSS Gate-to-Source Leakage Current ––––––± 200nA V GS = ±20V

T J Operating Junction and

-55°C to 175°C Max.

T STG

Storage Temperature Range

75V

R DS(on) = 2.5m ?

(typ.) ???6" Wafer

Electrical Characteristics *

IRFC2907B

HEXFET ?l

100% Tested at Probe

l Available in Tape and Reel, Chip Pack, Sawn on Film and Gel Pack**l Ultra Low On-Resistance PD - 93777

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