AM81214-030中文资料
August 1992L-BAND RADAR APPLICATIONS
RF &MICROWAVE TRANSISTORS
.310x .3102LFL (S064)
hermetically sealed
.REFRACTORY/GOLD METALLIZATION .EMITTER SITE BALLASTED .RUGGEDIZED VSWR ∞:1
.LOW THERMAL RESISTANCE .INPUT/OUTPUT MATCHING .OVERLAY GEOMETRY
.METAL/CERAMIC HERMETIC PACKAGE .
P OUT =26W MIN.WITH 7.2dB GAIN
DESCRIPTION
The AM81214-030device is a high power transistor specifically designed for L-Band Radar pulsed driver applications.
The device is capable of operation over a wide range of pulse widths,duty cycles and tempera-tures and is capable of withstanding ∞:1output VSWR at rated RF conditions.Low RF thermal resistance and computerized automatic wire bond-ing techniques ensure high reliability and product consistency.
The AM81214-030is supplied in the IMPAC ?Her-metic Metal/Ceramic package with internal Input/Output matching structures.
PIN CONNECTION
BRANDING 81214-30
ORDER CODE AM81214-030
ABSOLUTE MAXIMUM RATINGS (Tcase =25°C)
Symbol
Parameter
Value Unit
P DISS Power Dissipation*(T C ≤100°C)63W I C Device Current*
2.75A V CC Collector-Supply Voltage*
32V T J Junction Temperature (Pulsed RF Operation)250°C T STG
Storage Temperature
?65to +200
°C
R TH(j-c)
Junction-Case Thermal Resistance*
2.4
°C/W
*Applies only to rated RF amplifier opera tion
AM81214-030
1.Collector 3.Emitter
2.Base 4.Base
THERMAL DATA
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ELECTRICAL SPECIFICATIONS (T case =25°C)Symbol
Test Conditions
Value Unit
Min.
Typ.
Max.
P IN f =1215—1400MHz P IN =5W Peak V CC =28V 2636—W ηc f =1215—1400MHz P IN =5W Peak V CC =28V 4549—%G P
f =1215—1400MHz
P IN =5W Peak
V CC =28V
7.2
8.5
—
dB
Note:
Pulse Width =1000μS Duty Cycle
=
10%
STATIC
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
BV CBO I C =10mA I E =0mA 55——V BV EBO I E =1mA I C =0mA 3.5——V BV CER IC =20mA R BE =10?55——V I CES V BE =0V V CE =28V ——5mA h FE
V CE =5V
I C =1A
15
—
150
—
DYNAMIC
AM81214-030
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TYPICAL PERFORMANCE
RELATIVE POWER OUTPUT& COLLECTOR EFFICIENCY vs COLLECTOR VOLTAGE TYPICAL BROADBAND POWER AMPLIFIER
MAXIMUM THERMAL RESISTANCE
vs PULSE WIDTH
AM81214-030
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TYPICAL INPUT IMPEDANCE
TYPICAL COLLECTOR LOAD IMPEDANCE
P IN =5.0W V CC =28V Z O =50Ohms
P IN =5.0W V CC =28V Z O =50Ohms
IMPEDANCE DATA
Z IN
Z CL
FREQ.Z IN (?)Z CL (?)L =1.215GHz 4.5+j 12.511.0?j 10.0M =1.300GHz 8.5+j 13.510.5?j 6.5H =1.400GHz
9.5+j 10.0
8.0?j 5.0
AM81214-030
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PACKAGE MECHANICAL DATA
.318/.306
TEST CIRCUIT
AM81214-030
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AM81214-030
Information furnished is believed to be accurate and reliable.However,SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use.No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.Specificationsmentioned in this publication are subject to change without notice.This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics.
?1994SGS-THOMSON Microelectronics-All Rights Reserved
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