H5N2508DL-E中文资料
H5N2508DL, H5N2508DS
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1108-0200
(Previous: ADE-208-1377)
Rev.2.00
Sep 07, 2005 Features
? Low on-resistance: R DS (on) = 0.48 ? typ.
? Low leakage current: I DSS = 1 μA max (at V DS = 250 V)
? High speed switching: t f = 11 ns typ (at V GS = 10 V, V DD = 125 V, I D = 3.5 A)
? Low gate charge: Qg = 13 nC typ (at V DD = 200 V, V GS = 10 V, I D = 7 A)
? Avalanche ratings
Outline
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Value Unit
Drain to source voltage V DSS 250 V Gate to source voltage V GSS ±30 V Drain current
I D 7 A Drain peak current
I D (pulse) Note 1
28 A
Body-drain diode reverse drain current I DR 7 A Body-drain diode reverse drain peak current I DR (pulse) Note 1 28
A
Avalanche current
I AP Note 3 7
A
Channel dissipation
Pch Note 2 30 W Channel to case thermal Impedance θ ch-c 4.17 °C/W Channel temperature Tch 150 °C Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Tch ≤ 150°C
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V (BR) DSS 250 — — V I D = 10 mA, V GS = 0 Gate to source leak current I GSS — — ±0.1 μA V GS = ±30 V, V DS = 0 Zero gate voltage drain current
I DSS — — 1 μA V DS = 250 V, V GS = 0 Gate to source cutoff voltage
V GS (off) 3.0 — 4.5 V V DS = 10 V, I D = 1 mA
Static drain to source on state resistance R DS (on) — 0.48 0.63 ? I D = 3.5 A, V GS = 10 V Note 4
Forward transfer admittance |y fs | 3.0 5.0 — S I D = 3.5 A, V DS = 10 V Note 4
Input capacitance Ciss — 450 — pF Output capacitance
Coss — 60 — pF Reverse transfer capacitance Crss — 12 — pF V DS = 25 V V GS = 0 f = 1 MHz
Turn-on delay time t d (on) — 19 — ns Rise time
t r — 14 — ns
Turn-off delay time t d (off) — 47 — ns
Fall time
t f — 11 — ns V DD = 125 V, I D = 3.5 A
V GS = 10 V R L = 35.7 ? Rg = 10 ? Total gate charge
Qg
— 13 — nC Gate to source charge
Qgs
—
2.5
—
nC
Gate to drain charge
Qgd — 6 — nC V DD = 200 V V GS = 10 V I D = 7 A
Body-drain diode forward voltage V DF — 0.9 1.4 V I F = 7 A, V GS = 0 Body-drain diode reverse recovery time t rr — 100 — ns Body-drain diode reverse recovery charge Q rr — 0.38 — μC I F = 7 A, V GS = 0 di F /dt = 100 A/μs
Note: 4. Pulse test
Main Characteristics
Package Dimensions
Ordering Information
Part Name
Quantity
Shipping Container
H5N2508DL-E 3200 pcs Box (Sack) H5N2508DSTL-E 3000 pcs
Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
https://www.wendangku.net/doc/8a116879.html, RENESAS SALES OFFICES
Refer to "https://www.wendangku.net/doc/8a116879.html,/en/network" for the latest and detailed information.
Renesas Technology America, Inc.
450 Holger Way, San Jose, CA 95134-1368, U.S.A
Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501
Renesas Technology Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.
Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900
Renesas Technology Hong Kong Ltd.
7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong
Tel: <852> 2265-6688, Fax: <852> 2730-6071
Renesas Technology Taiwan Co., Ltd.
10th Floor, No.99, Fushing North Road, Taipei, Taiwan
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999
Renesas Technology (Shanghai) Co., Ltd.
Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China
Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952
Renesas Technology Singapore Pte. Ltd.
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632
Tel: <65> 6213-0200, Fax: <65> 6278-8001
Renesas Technology Korea Co., Ltd.
Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea
Tel: <82> 2-796-3115, Fax: <82> 2-796-2145
Renesas Technology Malaysia Sdn. Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: <603> 7955-9390, Fax: <603> 7955-9510